Zobrazeno 1 - 10
of 34
pro vyhledávání: '"L M Dolginov"'
Autor:
L. M. Dolginov, A. E. Bochkarev
Publikováno v:
Acta Physica Hungarica. 70:171-175
The effect of the quaternary solid solution (QSS) immiscibility region (IR) on the In x Ga1−xAs y Sb1−y /GaSb liquid-phase epitaxy (LPE) was investigated. To obtain GaSb-related OSS (x
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a27b99a520fbff137e5961bfb46759e3
https://doi.org/10.1007/bf03156261
https://doi.org/10.1007/bf03156261
Publikováno v:
Acta Physica Hungarica. 70:165-169
In the present work heterostructures were grown in a whole technological process on relief (“terrace” and “double channel”) GaSb substrates. The best results were etched on a substrate by photolithographic techniques. Terrace direction and et
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::891b4c043376da158c3ca1703f6161c1
https://doi.org/10.1007/bf03156260
https://doi.org/10.1007/bf03156260
Publikováno v:
Measurement Techniques. 34:734-735
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf145d0226793dd6d98b447f3a4405cc
https://doi.org/10.1007/bf00982072
https://doi.org/10.1007/bf00982072
Publikováno v:
Soviet Journal of Quantum Electronics. 6:747-753
Semiconductor solid solutions are used widely in lasers because variation of their chemical composition makes it possible to cover completely the spectral range 0.32–32 μ. Recently quaternary compositions such as AlGaPAs, GaInPAs, GaAlAsSb, and ot
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aea8de5c4c7dd8a307a1f647c3039751
https://doi.org/10.1070/qe1976v006n07abeh011645
https://doi.org/10.1070/qe1976v006n07abeh011645
Publikováno v:
Kristall und Technik. 13:631-638
The phase diagram of the Ga–In–As–Sb quaternary system has been determined experimentally and also has been treated on the base of thermodynamic calculations. The liquidus data were obtained by DTA and solidus data were determined using electro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d38a6d0148fef252f46658861212a66
https://doi.org/10.1002/crat.19780130605
https://doi.org/10.1002/crat.19780130605
Autor:
P G Eliseev, Ya A Aarik, V A Skripkin, L V Druzhinina, A E Drakin, L M Dolginov, P A Lyuk, B N Sverdlov, Ya F Friedentkhal
Publikováno v:
Soviet Journal of Quantum Electronics. 10:50-53
The characteristics of heterostructures and the main radiative properties of infrared (1.4--1.8 ..mu..) heterojunction lasers using quaternary solid solutions of AlGaAsSb, grown by liquid--phase epitaxy of GaSb substrates, are presented. A threshold
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a92d872498e8c16d34bf30d5e51fbe37
https://doi.org/10.1070/qe1980v010n01abeh009853
https://doi.org/10.1070/qe1980v010n01abeh009853
Autor:
L. M. Dolginov, E G Shevchenko, P. G. Eliseev, A. P. Bogatov, M. G. Mil'vidskii, B. N. Sverdlov, A E Drakin, V. V. Bezotosnyi
Publikováno v:
Journal of Soviet Laser Research. 5:324-348
Results are presented of investigations of the isoperiodic system GaInPAs/InP and of heterolasers on its basis. Schemes are presented for interpolation of the basic band parameters and of the refractive index of the GaInPAs solid solution, which is i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa148674807b399b2f53646d55fde2aa
https://doi.org/10.1007/bf01120624
https://doi.org/10.1007/bf01120624
Autor:
M. G. Mil'vidskii, L. V. Druzhinina, V. M. Rozhkov, E. G. Shevchenko, É. S. Musaev, M. M. Mukhitdinov, L. M. Dolginov
Publikováno v:
Measurement Techniques. 24:515-518
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6b5fb4b245108629db2f9ee057b148e
https://doi.org/10.1007/bf00825586
https://doi.org/10.1007/bf00825586
Publikováno v:
Soviet Journal of Quantum Electronics. 6:577-579
An investigation was made of the spectral, threshold, power, and time characteristics of laser diodes of planar and stripe geometry with AlxGa1–xAs double heterostructures. The threshold current densities in the Al02Gao8As lasers were 0.9 kA/cm2 at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::23213e5c156c7e899831d3c132bf2d76
https://doi.org/10.1070/qe1976v006n05abeh011355
https://doi.org/10.1070/qe1976v006n05abeh011355
Autor:
M G Mil'vidskiĭ, V V Bezotosnyĭ, B N Sverdlov, G V Shepekina, P G Eliseev, E G Shevchenko, L M Dolginov
Publikováno v:
Soviet Journal of Quantum Electronics. 10:1146-1148
Continuous-wave heterojunction lasers utilizing an isoperiodic system of quaternary GalnPAs solid solutions, fabricated by liquid-phase epitaxy on p-lnP substrates, were built and investigated. The lasers operated at room temperature in the 1.24–1.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::51e8fd4647727aeaf8651441912e926b
https://doi.org/10.1070/qe1980v010n09abeh010680
https://doi.org/10.1070/qe1980v010n09abeh010680