Zobrazeno 1 - 3
of 3
pro vyhledávání: '"L M Batukova"'
Autor:
T. N. Yan'kova, I. G. Malkina, Evgenii M Dianov, B. N. Zvonkov, I A Avrutskii, G. A. Maksimov, L V Medvedeva, L M Batukova, N B Zvonkov
Publikováno v:
Quantum Electronics. 24:859-862
InGaP/GaAs/InGaAs heterostructures were grown by MOCVD hydride epitaxy at atmospheric pressure. They were used in injection semiconductor lasers emitting at 0.92–1.02 μm. The output power of one cleaved facet was up to 750 mW when the width of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::567ee496f546201c1f5328e6213f34d3
https://doi.org/10.1070/qe1994v024n10abeh000194
https://doi.org/10.1070/qe1994v024n10abeh000194
Publikováno v:
Soviet Physics Journal. 17:40-43
The electrical and photoelectrical properites of periodic p-n structures in an epitaxial film of PbS are studied. The plane of the junctions is perpendicular to the plane of the film. The possibility of using such structures in the photodiode mode as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa0d220783933ad12f7cf58cd44202dd
https://doi.org/10.1007/bf00889913
https://doi.org/10.1007/bf00889913
Autor:
L. M. Batukova
Publikováno v:
Soviet Physics Journal. 14:701-703
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c1afbeb174684d8a266e4713c1febba
https://doi.org/10.1007/bf00818963
https://doi.org/10.1007/bf00818963