Zobrazeno 1 - 10
of 43
pro vyhledávání: '"L L Lev"'
Autor:
V. N. Strocov, L. L. Lev, F. Alarab, P. Constantinou, X. Wang, T. Schmitt, T. J. Z. Stock, L. Nicolaï, J. Očenášek, J. Minár
Publikováno v:
Nature Communications, Vol 14, Iss 1, Pp 1-11 (2023)
Abstract Three-dimensional (3D) electronic band structure is fundamental for understanding a vast diversity of physical phenomena in solid-state systems, including topological phases, interlayer interactions in van der Waals materials, dimensionality
Externí odkaz:
https://doaj.org/article/0e5933e618a0440ebb675def1c2ae19a
Autor:
L. L. Lev, I. O. Maiboroda, E. S. Grichuk, N. K. Chumakov, N. B. M. Schröter, M.-A. Husanu, T. Schmitt, G. Aeppli, M. L. Zanaveskin, V. G. Valeyev, V. N. Strocov
Publikováno v:
Physical Review Research, Vol 4, Iss 1, p 013183 (2022)
Band bending at semiconductor surfaces and interfaces is the key to applications ranging from classical transistors to topological quantum computing. A semiconductor particularly important for optical as well as microwave devices is GaN. What makes t
Externí odkaz:
https://doaj.org/article/4e91a7d66a564861aae5c4caa751f3cf
Autor:
L. L. Lev, I. O. Maiboroda, M.-A. Husanu, E. S. Grichuk, N. K. Chumakov, I. S. Ezubchenko, I. A. Chernykh, X. Wang, B. Tobler, T. Schmitt, M. L. Zanaveskin, V. G. Valeyev, V. N. Strocov
Publikováno v:
Nature Communications, Vol 9, Iss 1, Pp 1-9 (2018)
Semiconductor heterostructures hosting two-dimensional electron gases are widely used today in high-electron-mobility transistors. Here, the authors probe the electronic structure in GaN/AlGaN, heterostructures, discovering planar anisotropy of the e
Externí odkaz:
https://doaj.org/article/d7a8ee1767ae4e4281aa37c8629d1091
Autor:
A. Koitzsch, N. Heming, M. Knupfer, B. Büchner, P. Y. Portnichenko, A. V Dukhnenko, N. Y. Shitsevalova, V. B. Filipov, L. L. Lev, V. N. Strocov, J. Ollivier, D. S. Inosov
Publikováno v:
Nature Communications, Vol 7, Iss 1, Pp 1-7 (2016)
In compounds containing 4f and 5f elements, hidden-order phases exist which are undetectable by many methods, the origins of which are debated. Here, the authors use photoemission and neutron scattering methods to show how such a multipolar-ordered p
Externí odkaz:
https://doaj.org/article/06ef327c97f74004ab39b261551e06a2
Publikováno v:
Physical Review Materials. 6
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf151711e395b6d614b1e918f9853207
https://doi.org/10.1103/physrevmaterials.6.084605
https://doi.org/10.1103/physrevmaterials.6.084605
Autor:
I. A. Chernykh, I. O. Maiboroda, Yu. V. Grishchenko, Vladimir N. Strocov, L. L. Lev, M. L. Zanaveskin, L. A. Morgun, A. B. Davydov, V. G. Valeyev, N. K. Chumakov, I. S. Ezubchenko
Publikováno v:
Semiconductors. 54:1150-1154
The unusual observation of the Kondo effect in the two-dimensional electron gas (2DEG) of magnetically undoped AlGaN/GaN heterostructures is reported. The temperature-dependent zero-field resistivity data exhibits an upturn below 120 K, while the sta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::46d0a7f5078187ba3386cb8dee20a5ff
https://doi.org/10.1134/s1063782620090067
https://doi.org/10.1134/s1063782620090067
Autor:
X. Wang, Claudia Cancellieri, Masaki Kobayashi, Zaher Salman, Vladimir N. Strocov, L. L. Lev, Jonas A. Krieger, Niels B. M. Schröter, Alla Chikina, M.-A. Husanu
Publikováno v:
Journal of Electron Spectroscopy and Related Phenomena. 236:1-8
Angle-resolved photoelectron spectroscopy (ARPES) is the main experimental tool to explore electronic structure of solids resolved in the electron momentum k . Soft-X-ray ARPES (SX-ARPES), operating in a photon energy range around 1 keV, benefits fro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8120121aa23073a1212ee096d52301d
https://doi.org/10.1016/j.elspec.2019.06.009
https://doi.org/10.1016/j.elspec.2019.06.009
Autor:
Zhen Zhu, Jin Hu, Hao Zheng, S. K. Mo, L. L. Lev, Si Li, Tieying Yang, Q. Wan, C. L. Wu, Weikang Wu, Vladimir N. Strocov, Shengyuan A. Yang, Y. B. Huang, C. Peng, Zhiqiang Mao, Zhongjun Chen, Nan Xu, Jin-Feng Jia, Mou Yang, Y. G. Shi
Publikováno v:
Physical Review B. 103
Using spin-resolved and angle-resolved photoemission spectroscopy and first-principles calculations, we have identified bulk band inversion and the spin-polarized surface state evolved from a weak topological insulator (TI) phase in van der Waals mat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9c011e54424408fe43f28975e6c6d4c
https://doi.org/10.1103/physrevb.103.165107
https://doi.org/10.1103/physrevb.103.165107
Publikováno v:
Electronic Structure. 4:015003
Electronic structure of LaAlO3/SrTiO3 (LAO/STO) samples, grown at low oxygen pressure and post-annealed ex situ, was investigated by soft-x-ray ARPES focussing on the Fermi momentum (k F) of the mobile electron system (MES). X-ray irradiation of thes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc2c9d87195e36ac724413420503daaa
https://doi.org/10.1088/2516-1075/ac4e74
https://doi.org/10.1088/2516-1075/ac4e74
Autor:
Vladimir N. Strocov, X. Wang, Thorsten Schmitt, M. L. Zanaveskin, L. L. Lev, N. K. Chumakov, M.-A. Husanu, B. Tobler, I. A. Chernykh, I. S. Ezubchenko, E. S. Grichuk, I. O. Maiboroda, V. G. Valeyev
Publikováno v:
Nature Communications, Vol 9, Iss 1, Pp 1-9 (2018)
Nature Communications
Nature Communications
Nanostructures based on buried interfaces and heterostructures are at the heart of modern semiconductor electronics as well as future devices utilizing spintronics, multiferroics, topological effects and other novel operational principles. Knowledge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::42245cf8368faaa6c2b57cb66c6490d1
http://link.springer.com/article/10.1038/s41467-018-04354-x
http://link.springer.com/article/10.1038/s41467-018-04354-x