Zobrazeno 1 - 8
of 8
pro vyhledávání: '"L L C Lem"'
Autor:
C Ton-That, L L C Lem, M R Phillips, F Reisdorffer, J Mevellec, T-P Nguyen, C Nenstiel, A Hoffmann
Publikováno v:
New Journal of Physics, Vol 16, Iss 8, p 083040 (2014)
Native and hydrogen-plasma induced shallow traps in hydrothermally grown ZnO crystals have been investigated by charge-based deep level transient spectroscopy, photoluminescence and cathodoluminescence microanalysis. The as-grown ZnO exhibits a trap
Externí odkaz:
https://doaj.org/article/fbc3bbd5a5d241f2bd6be8a0af5a74e3
Publikováno v:
Oxide-based Materials and Devices X.
Publikováno v:
Physical Review Materials. 2
Cathodoluminescence (CL) spectra were measured to determine the characteristics of luminescence bands and carrier dynamics in $\ensuremath{\beta}\ensuremath{-}{\mathrm{Ga}}_{2}{\mathrm{O}}_{3}$ bulk single crystals. The CL emission was found to be do
Autor:
Liangchen Zhu, Sajid Ali, Matthew R. Phillips, Michael J. Ford, L. L. C. Lem, Thien-Phap Nguyen, Cuong Ton-That, Kit Fair
Publikováno v:
Journal of Physics D: Applied Physics
Journal of Physics D: Applied Physics, IOP Publishing, 2017, 50 (11), ⟨10.1088/1361-6463/aa5c23⟩
Journal of Physics D: Applied Physics, IOP Publishing, 2017, 50 (11), ⟨10.1088/1361-6463/aa5c23⟩
© 2017 IOP Publishing Ltd. We present a correlative experimental and theoretical study of bound excitons in hydrogen-doped ZnO, with a particular focus on the dynamics of their metastable state confined in the sub-surface region, using a combination
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5d8c9364b3a6a2806755ecc1f933c2c9
https://hdl.handle.net/10453/124908
https://hdl.handle.net/10453/124908
Publikováno v:
Journal of Luminescence. 154:387-391
Cathodoluminescence spectra have been measured in hydrothermal and hydrogen-doped ZnO at different excitation densities and temperatures to investigate the emission efficiencies of near-band-edge (NBE), green and yellow luminescence bands. The NBE in
Autor:
Philippe Bove, Yves Dumont, V. E. Sandana, Manijeh Razeghi, R. McClintock, D. J. Rogers, M. Neumann-Spallart, L. L. C. Lem, E. Chikoidze, Cuong Ton-That, Ferechteh H. Teherani, P. Chapon, Matthew R. Phillips, Thanh Tung Huynh
Nominally-undoped Ga 2 O 3 layers were deposited on a -, c - and r -plane sapphire substrates using pulsed laser deposition. Conventional x-ray diffraction analysis for films grown on a - and c -plane sapphire showed the layers to be in the β-Ga 2 O
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::903663e4442f8a5ad96c1d79fdf05ca6
https://hdl.handle.net/10453/88426
https://hdl.handle.net/10453/88426
Publikováno v:
Journal of Materials Research. 26:2912-2915
ZnO crystals have been investigated by scanning cathodoluminescence microscopy and spectroscopy at 80 K following hydrogen incorporation by plasma exposure. The intensity of the ZnO near-band-edge (NBE) emission is greatly enhanced while the defect-r
Autor:
Geoff McCredie, Matthew Foley, Matthew R. Phillips, Bruce C. C. Cowie, Cuong Ton-That, L. L. C. Lem
Publikováno v:
Materials Letters. 64:386-388
Fe-doped ZnO was successfully fabricated by thermal in-diffusion of Fe into ZnO crystals. X-ray absorption near edge structure (XANES), photoemission and cathodoluminescence (CL) spectroscopy have been combined to examine the Fe diffusion and its eff