Structural, Morphological, Vibrational and Optical Properties of GaN Films Grown by Reactive Sputtering: The Effect of RF Power at Low Working Pressure Limit

Autor: R. S. de Oliveira, H. A. Folli, C. Stegemann, I. M. Horta, B. S. Damasceno, W. Miyakawa, A. L. J. Pereira, M. Massi, A. S. da Silva Sobrinho, D. M. G. Leite

Publikováno v: Materials Research, Vol 25 (2022)

Abstract This work reports the properties of GaN films grown onto c-Si (100) at relatively low substrate temperature (400°C) by reactive magnetron sputtering. The study depicts the effect of working pressure and RF power on the GaN film structural,

Externí odkaz: https://doaj.org/article/2117ac92ff414944a2e3510f8165c2bb

Multi-objective optimization for methane, glycerol, and ethanol steam reforming using lichtenberg algorithm

Autor: T. A. Z. de Souza, J. L. J. Pereira, M. B. Francisco, C. A. R. Sotomonte, B. Jun Ma, G. F. Gomes, C. J. R. Coronado

Publikováno v: International Journal of Green Energy. 20:390-407

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::febc77f122c02a8d5d2f0fd7446ecd47
https://doi.org/10.1080/15435075.2022.2050375

Unveiling the role of the lone electron pair in sesquioxides at high pressure: compressibility of β-Sb2O3

Autor: A. L. J. Pereira, Juan Angel Sans, Catalin Popescu, Julio Pellicer-Porres, Francisco Javier Manjón, Javier Ruiz-Fuertes, Jordi Ibáñez, Vanesa P. Cuenca-Gotor, Julia Contreras-García, Virginia Monteseguro, Alfonso Muñoz, Plácida Rodríguez-Hernández

Publikováno v: RiuNet. Repositorio Institucional de la Universitat Politécnica de Valéncia
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Digital.CSIC. Repositorio Institucional del CSIC

The structural, vibrational and electronic properties of the compressed beta-Sb2O3 polymorph, a.k.a. mineral valentinite, have been investigated in a joint experimental and theoretical study up to 23 GPa. The compressibility of the lattice parameters

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3ba9fb13c2797057b4dca95ae8340e35
https://doi.org/10.1039/d1dt00268f

Characterization and Decomposition of the Natural van der Waals SnSb2Te4 under Compression

Autor: Alfonso Muñoz, B. García-Domene, Adrián Andrada-Chacón, Ravhi S. Kumar, Rosario Vilaplana, Vanesa P. Cuenca-Gotor, Dominik Daisenberger, E. Lora da Silva, Oliver Oeckler, Julia Contreras-García, Oscar Gomis, Catalin Popescu, Javier Sánchez-Benítez, Philipp Urban, A. L. J. Pereira, Juan Angel Sans, Francisco Javier Manjón, Plácida Rodríguez-Hernández, Alfredo Segura, Daniel Errandonea

Publikováno v: Inorganic Chemistry
Inorganic Chemistry, American Chemical Society, 2020, 59 (14), pp.9900-9918. ⟨10.1021/acs.inorgchem.0c01086⟩
RiuNet. Repositorio Institucional de la Universitat Politécnica de Valéncia
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[EN] High pressure X-ray diffraction, Raman scattering, and electrical measurements, together with theoretical calculations, which include the analysis of the topological electron density and electronic localization function, evidence the presence of

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::52886f011bb1185b2689fddc9f269c98
https://doi.org/10.1021/acs.inorgchem.0c01086

Study of aluminum nitride films deposited on silicon for fabrication of MEMs devices

Autor: D.M.G. Leite, Julio Cezar Faria, Argemiro Soares da Silva Sobrinho, Péricles Lopes SantAna, Newton A.S. Gomes, A. L. J. Pereira

Publikováno v: Revista Brasileira de Aplicações de Vácuo. 40

In this work, aluminum nitride (AlN) thin films deposited on the silicon (100) by RF magnetron-sputtering were analyzed. Nitrogen and argon plasmas were used in a vacuum system technique, being possible to obtain films oriented to the (oo2) crystallo

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e0cfa43d7c12461636f39ad6c246cf1c
https://doi.org/10.17563/rbav.v40.1198