Zobrazeno 1 - 10
of 51
pro vyhledávání: '"L Ghenim"'
Akademický článek
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Autor:
B Cabarrou, M.‐H Gaspard, W Vaillant, Pierre Bories, Loic Ysebaert, B. Branco, Y Leveneur, Camille Laurent, Botin, L Ghenim, Lucie Oberic, N Hess, M Carreiro
Publikováno v:
Hematological Oncology. 39
Autor:
C, Allier, S, Morel, R, Vincent, L, Ghenim, F, Navarro, M, Menneteau, T, Bordy, L, Hervé, O, Cioni, X, Gidrol, Y, Usson, J-M, Dinten
Publikováno v:
Cytometry. Part A : the journal of the International Society for Analytical Cytology. 91(5)
They present results for lens-free microscopy for the imaging of dense cell culture. With this aim, they use a multiwavelength LED illumination with well separated wavelengths, together with the implementation of an appropriate holographic reconstruc
Publikováno v:
Annalen der Physik. 8:743-752
We report Coulomb oscillations in short (50 nm and 100 nm) and wide Silicon MOSFETs at very low temperature, when the source-drain conductance is below the quantum e2/h. the geometry is dual of a wire, where such oscillations have been previously rep
Publikováno v:
Physical Review B. 45:12098-12101
A low-temperature (T4.2 K) transport study of n-type doped (\ensuremath{\simeq}${10}^{19}$ ${\mathrm{cm}}^{\mathrm{\ensuremath{-}}3}$) bulk GaAs reveals an enhancement of the electrical resistance, \ensuremath{\Delta}R/R\ensuremath{\simeq}${10}^{\mat
Publikováno v:
Solid State Communications. 79:693-697
Our investigation of electronic transport in Hg1−xCdxTe and InSb shows a linear-in-temperature correction to the resistance for T K , Δ R R ∼ 10 −3 , which vanishes with the applied magnetic field as — B 1 2 , characteristic of weak localiza
Publikováno v:
Solid State Communications. 75:341-344
Low field transport studies of HgTe/CdTe superlattices grown by laser assisted molecular beam epitaxy show weak localization effects for H < 30 Oe and T < 30 K. We have observed small amplitude fluctuations (dR/R ∼ 10−5) which are superimposed on
Autor:
L. Ghenim, R. Blanc, T. Plenat, F. Sauter, V. Agache, C. Pudda, C. Chabrol, P. Caillat, Alain H. Fuchs, A.V. Agasoster
Publikováno v:
TRANSDUCERS 2007 - 2007 International Solid-State Sensors, Actuators and Microsystems Conference.
This paper relates to a new architecture of label-free Ion channel based biosensors. The biochips are composed of nanoaperture arrays etched in a free-standing silicon nitride (Si3N4) supporting membrane. These membranes should be covered lately by a
Akademický článek
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Publikováno v:
Semiconductor Science and Technology. 5:S287-S289
Low-field transport studies of HgTe/CdTe superlattices grown by laser-assisted molecular beam epitaxy show weak localisation effects for H