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Publikováno v:
Quantum Electronics. 30:664-668
The dependence of the mode optical gain on current in InAs/InGaAs quantum-dot structures grown by the method of molecular-beam epitaxy is obtained from the experimental study of ultra-low-threshold laser diodes. The record lowest inversion threshold
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b2bc07798eb23907d8fb25988a32b0c
https://doi.org/10.1070/qe2000v030n08abeh001787
https://doi.org/10.1070/qe2000v030n08abeh001787
