Zobrazeno 1 - 10
of 27
pro vyhledávání: '"L E Katz"'
Publikováno v:
Journal of AOAC INTERNATIONAL. 82:1505-1508
Hexazinone has been detected at levels ranging from 0.2 to 50 μg/L in many groundwater samples from eastern Maine over the past decade. A rapid and inexpensive direct-injection high-performance liquid chromatographic (HPLC) method has been developed
Autor:
L. E. Katz
Publikováno v:
Journal of Clinical Endocrinology & Metabolism. 81:1141-1146
Publikováno v:
Journal of AOAC International. 82(6)
Hexazinone has been detected at levels ranging from 0.2 to 50 micrograms/L in many groundwater samples from eastern Maine over the past decade. A rapid and inexpensive direct-injection high-performance liquid chromatographic (HPLC) method has been de
Publikováno v:
The Journal of clinical endocrinology and metabolism. 84(9)
Congenital hyperinsulinism (HI) is the most common cause of persistent hypoglycemia in infants under 1 yr of age. HI is most often due to defective glucose-insulin coupling by the beta-cell sulfonylurea receptor (SUR1) or glutamate dehydrogenase. HI-
Publikováno v:
The Journal of clinical endocrinology and metabolism. 83(12)
Insulin-like growth factor (IGF) binding protein-1 (IGFBP-1) gene transcription is known to be inhibited by insulin in vivo and in vitro. Levels of IGFBP-1 typically rise during fasting but also rise after acute hypoglycemia, including that induced b
Publikováno v:
The Journal of pediatrics. 123(4)
Octreotide, a long-acting analog of somatostatin that inhibits insulin release, has the potential to control hypoglycemia in infants with congenital hyperinsulinism. To examine the efficacy and side effects of octreotide, we evaluated therapy between
Autor:
L. C. Kimerling, L. E. Katz
Publikováno v:
Journal of The Electrochemical Society. 125:1680-1683
Autor:
L. E. Katz, J. W. Colby
Publikováno v:
Journal of The Electrochemical Society. 123:409-412
Publikováno v:
Journal of The Electrochemical Society. 124:425-430
Publikováno v:
Journal of The Electrochemical Society. 128:620-624
A pre‐process gettering treatment is described for Czochralski silicon substrates which removes essentially any transition group metal contaminants present in the wafer and continues to getter contaminants during subsequent device processing. Laser