Zobrazeno 1 - 10
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pro vyhledávání: '"L Debarge"'
Autor:
L. Debarge, Bernd Schulz, T. Shapoval, Rolf Seltmann, Shivam Agarwal, A. Cangiano, Carsten Hartig, Ronny Haupt, Roshita Ramkhalawon, Robert Melzer, J. Engelmann, N. Schmidt, Matthias Ruhm, A. Reichel, C. Kroh
Publikováno v:
2016 27th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
Tilt of the shallow trench isolation on the wafer edge with the radial signature is a known issue for all technology nodes. Presence of this tilt was proven by cross-sectional TEM measurements. For advanced nodes, starting from 28 nm, this tilt becom
Publikováno v:
Solar Energy Materials and Solar Cells. 74:71-75
We present a new way to realise a selective emitter structure using a single screen-printed phosphorous paste deposition as dopant source to obtain a doping differential, with rapid thermal diffusion. The heavily doped part of the emitter is situated
Publikováno v:
Solar Energy Materials and Solar Cells. 72:247-254
In this paper, we study the effect of hydrogen-electron cyclotron resonance plasma (ECR plasma) on the phosphorous-doped emitter of a solar cell based on multicrystalline silicon (POLIX s ). The purpose of this experiment is to realise a selective em
Autor:
S Strehlke, Jef Poortmans, Hugo Bender, Lieven Stalmans, Robert Mertens, Claude Lévy-Clément, L Debarge, Johan Nijs, Abdelilah Slaoui, S Jin, Thierry Conard
Publikováno v:
Solar Energy Materials and Solar Cells. 58:237-252
Porous silicon (PS) has several potential interests for crystalline Si solar cells. Besides the use as an anti-reflection coating, the porous layer also acts as a light-diffusor. However, major drawbacks are the light absorption within the porous lay
Autor:
Matty Caymax, E. Christoffel, J. Poortmans, Abdelilah Slaoui, Khalid Said, L Debarge, Johan Nijs
Publikováno v:
IEEE Transactions on Electron Devices. 46:2103-2110
One possible method to improve the efficiency of crystalline silicon (Si) solar cells is by alloying with germanium (Ge). Although the improved absorption of the alloy leads to a gain in the current, the reduction of the alloy bandgap causes a loss i
Publikováno v:
Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036).
Simultaneous diffusion of phosphorus and aluminum by rapid thermal processing (RTP) in the order of one minute is used to realize emitter and back surface field in a single high temperature step, with controlled surface concentration of the dopant in
Publikováno v:
Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036).
The authors present a new way of realising a selective emitter, using the simultaneous etching and hydrogenation properties of the ECR-H/sub 2/ plasma (electron cyclotron resonance hydrogen plasma). The impact of the H/sub 2/-plasma on multicrystalli
Publikováno v:
Scopus-Elsevier
Simulations using PC1D have been performed to demonstrate the viability of crystalline SiGe alloys implementation in thin film solar cells. An optimized structure would consist of a p-type doped SiGe layer, capped with a Si p-n junction at the top, a
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http://www.scopus.com/inward/record.url?eid=2-s2.0-0031348975&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-0031348975&partnerID=MN8TOARS
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