Výsledky vyhledávání

Akademický článek

The Epstein-Barr Virus-Encoded EBNA1 Protein Activates the Bone Morphogenic Protein (BMP) Signalling Pathway to Promote Carcinoma Cell Migration

Autor: Hannah E. Bridgewater, Kathryn L. Date, John D. O’Neil, Chunfang Hu, John R. Arrand, Christopher W. Dawson, Lawrence S. Young

Publikováno v: Pathogens, Vol 9, Iss 7, p 594 (2020)

The Epstein-Barr virus (EBV)-encoded nuclear antigen 1 (EBNA1) protein is expressed in all virus-associated malignancies, where it performs an essential role in the maintenance, replication and transcription of the EBV genome. In recent years, it has

Externí odkaz: https://doaj.org/article/ce316e345ad54c2eaf0a68eb6202025c

Zobrazit plný text záznamu

Akademický článek

Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.

Sub-10−9 Ω·cm2 contact resistivity on p-SiGe achieved by Ga doping and nanosecond laser activation

Autor: Fareen Adeni Khaja, Marc Schaekers, H. van Meer, Hao Yu, Naoto Horiguchi, Lee Jae Young, Y.-L. Jiang, L.-L. Wang, Dan Mocuta, Kelly E Hollar, L. Date, J.-L. Everaert, Wolfgang R. Aderhold, J. del Agua Borniquel, Abhilash J. Mayur, K. De Meyer, Andriy Hikavyy

Publikováno v: 2017 Symposium on VLSI Technology.

We report record breaking values for PMOS source drain (S/D) contact resistivity, ρ c 0.4 Ge 0.6 in combination with subsequent pulsed nanosecond laser anneal (NLA). Cross section transmission electron microscopy (XTEM) shows the pc reduction mechan

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::40bd1fc0d4ef187eefb870a26479b885
https://doi.org/10.23919/vlsit.2017.7998176

Zobrazit plný text záznamu

Ultralow-resistivity CMOS contact scheme with pre-contact amorphization plus Ti (germano-)silicidation

Publikováno v: 2016 IEEE Symposium on VLSI Technology.

Following the previous study on Si:P [1], we also achieve ultralow contact resistivities (ρ c ) of ∼2×10−9 Ω·cm2 on Si 0.3 Ge 0.7 :B using the same Ti based pre-contact amorphization (PCAI) plus post-metal anneal (PMA) technique. Similar as o

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::24bd2b461000e66e6bf5421ed974bc38
https://doi.org/10.1109/vlsit.2016.7573381

Zobrazit plný text záznamu

Optimization of gate stack parameters towards 3D-SONOS application

Autor: G. Van den bosch, Baojun Tang, Ingrid Debusschere, Laurent Breuil, Antonio Arreghini, Gouri Sankar Kar, L. Date, J. Van Houdt, A. Cacciato

Publikováno v: Microelectronic Engineering. 88:1164-1167

A planar SONOS capacitor was used to optimize different parameters of the gate stack, in view of integration in a 3D cell. It is found that a poly-Si substrate strongly degrades the channel mobility but program and retention are not compromised. The

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f25599fb57005fa895465774cb9e0732
https://doi.org/10.1016/j.mee.2011.03.140

Zobrazit plný text záznamu

Development of ALD HfZrOx with TDEAH, TDEAZ and H2O

Autor: Tom Schram, L. Date, Christoph Adelmann, Annelies Delabie, Xiaoping Shi, Sven Van Elshocht, Marc Schaekers, Laura Nyns, Lars-Ake Ragnarsson, Shinji Takeoka, Hilde Tielens, T. Nakabayashi, R. Schreutelkamp

Publikováno v: ECS Transactions. 27:699-704

A 300mm ALD HfZrOx process using TDEAH, TDEAZ, and H2O is developed. This process applies a nano-laminate approach to grow a HfZrOx film by intermixing ALD HfO2 and ZrO2 around 250{degree sign}C. It is found that the corresponding Zr content of the f

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9815e3f7adcb9e5a4264d9091d3af26e
https://doi.org/10.1149/1.3360697

Zobrazit plný text záznamu

High-k Gate Stack: Improved Reliability through Process Clustering

Autor: B. McDougal, J. Borniquel, Atif Noori, Swenberg Johanes F, Houda Graoui, Maitreyee Mahajani, L. Date, Steven Hung, Roger Curtis, Liu Patricia M, B. Kanan, Malcolm J. Bevan, Osbert Chan, Chi-Nung Ni, David Chu

Publikováno v: ECS Transactions. 33:403-409

Introduction High-k (HK) gate dielectric stack process integration is one of the most critical and challenging steps in the fabrication of CMOS since its adoption at the 45nm node [1]. A typical HK stack consists of the SiO2 interfacial layer (iL) fo

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3ec06fa26dff59956848e75f2ec141d4
https://doi.org/10.1149/1.3485276

Zobrazit plný text záznamu

Epstein–Barr virus-encoded EBNA1 modulates the AP-1 transcription factor pathway in nasopharyngeal carcinoma cells and enhances angiogenesis in vitro

Autor: Robert Valentine, John R. Arrand, Kathryn L Date, Marilyn B. Chukwuma, Victoria H. J. Wood, Christopher W. Dawson, Lawrence S. Young, Thomas J Owen, John D. O'Neil

Publikováno v: Journal of General Virology. 89:2833-2842

The Epstein–Barr virus (EBV)-encoded EBNA1 protein is expressed in all virus-associated tumours, including nasopharyngeal carcinoma (NPC), where it plays an essential role in EBV genome maintenance, replication and transcription. Previous studies s

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::de1a10b4f84c59123c6adb60cf237142
https://doi.org/10.1099/vir.0.2008/003392-0

Zobrazit plný text záznamu

Optimization of HfSiON using a design of experiment (DOE) approach on 0.45V Vt Ni-FUSI CMOS transistors

Autor: Rita Verbeeck, L. Date, Aude Rothschild, J.-L. Everaert, Christa Vrancken, Anabela Veloso, Masaaki Niwa, Ingrid Debusschere, O. Richard, M. de Potter, Philippe Absil, Malgorzata Jurczak, Christoph Kerner, Thierry Conard, Serge Biesemans, Anne Lauwers, X. Shi, R. Mitsuhashi

Publikováno v: Microelectronics Reliability. 47:521-524

We report for the first time that the optimization of a HfSiON process on Ni-FUSI devices is best tackled using a design of experiments (DOE [Myers RH, Montgomery. Response surface methodology. New York, DC: Wiley; 1995]) approach. We show that a DOE

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2a147b28fc145bf8494394fe6b1d8944
https://doi.org/10.1016/j.microrel.2007.01.042

Zobrazit plný text záznamu

Development of 300mm MOCVD HfSiOx Process

Autor: Sven Van Elshocht, Xiaoping Shi, Jean-Luc Everaert, M. Schaekers, L. Date, A. Rothschild, Erik Rosseel, Shreyas Kher

Publikováno v: ECS Transactions. 3:417-424

This paper reports on the development of a 300mm MOCVD HfSiOx process. Alkylamido Hf and Si are used as precursors for HfSiOx deposition. A Design of Experiments (DOE) approach is applied to explore the effects of the precursor ratio and deposition p

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e3cf6e4ecbd635a0bc1443611ce8cf8b
https://doi.org/10.1149/1.2355730

Zobrazit plný text záznamu

Vyhledávací nástroje:

Upřesnit hledání