Zobrazeno 1 - 10
of 115
pro vyhledávání: '"L C Hopkins"'
Autor:
Timothy D. Harris, Rose Kopf, Y. Anand, L. C. Hopkins, W.D. Braddock, J. Nagle, Robert Hull, M. Geva, M. Micovic, Roger J. Malik, R. W. Ryan, J. M. Vandenberg
Publikováno v:
Journal of Crystal Growth. 127:686-689
Carbon-doped GaAs and Al x Ga 1-x As epilayers have been grown by solid source MBE using resistively heated, pyrolytic graphite filaments for the carbon source. These films were characterized by SIMS, Van der Pauw, X-ray diffraction, photoluminescenc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e35d7be681d44e888072200e1a0f38f
https://doi.org/10.1016/0022-0248(93)90711-5
https://doi.org/10.1016/0022-0248(93)90711-5
Autor:
J. D. Wynn, George John Zydzik, John Lopata, David Reese Peale, William Scott Hobson, James H. J. Yeh, Rob Chichester, Afshin Partovi, Cherry A. Murray, Kirk W. Baldwin, Matthias Wuttig, L. C. Hopkins, Lisa Dhar
Publikováno v:
Applied Physics Letters. 75:1515-1517
A laser light source for high-resolution near-field optics applications with an output power exceeding 1 mW (104 times the power from previous sources) and small (300 nm square to less than 50 nm square) output beam size is demonstrated. The very-sma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39bc56fd86bb0de8ac63c3519bfc436d
https://doi.org/10.1063/1.124740
https://doi.org/10.1063/1.124740
Publikováno v:
Physical Review B. 42:1364-1368
Demonstration de l'influence de l'ancrage du niveau de Fermi a la surface d'un semiconducteur sur la distribution en dopant. Il resulte de la derive de l'impurete durant la croissance du cristal par epitaxie par jet moleculaire. L'etude par spectrosc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6ad90522e76cb2595637586d9662f1a2
https://doi.org/10.1103/physrevb.42.1364
https://doi.org/10.1103/physrevb.42.1364
Publikováno v:
Journal of Applied Physics. 67:1969-1979
Spatial localization of Be in δ‐doped GaAs within few lattice constants (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6576b6672e7a9328485cf3d56eb428db
https://doi.org/10.1063/1.345576
https://doi.org/10.1063/1.345576
Publikováno v:
The Journal of Bone & Joint Surgery. 77:1565-1567
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7b079279d23d34b01c345e9513d6e1f6
https://doi.org/10.2106/00004623-199510000-00012
https://doi.org/10.2106/00004623-199510000-00012
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 10:2843-2845
Secondary ion mass spectrometry (SIMS) has been used to study the depth profiles of beryllium (Be) incorporation and diffusion in GaAs/AlGaAs heterostructures of graded index separate confinement heterostructure quantum well lasers. The epilayers wer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb98c62f8ef6c0be3216a9add605ad29
https://doi.org/10.1116/1.577921
https://doi.org/10.1116/1.577921
Publikováno v:
Applied Physics Letters. 56:2301-2303
Secondary‐ion mass spectrometric analysis of InP/Ga0.47In0.53As heterostructures incorporating Sn‐doped regions has been used to study the distribution of Sn in InP during molecular beam epitaxy. Depending upon the flux conditions, up to a monola
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f9eb6cf979e2a027ac6b6c2069f2149
https://doi.org/10.1063/1.102947
https://doi.org/10.1063/1.102947
Publikováno v:
Applied Physics Letters. 56:1137-1139
The incorporation of Sn into Ga0.47In0.53As grown at 450 °C by hydride source molecular beam epitaxy at concentrations ranging from about 3×1018 to 1×1021 Sn/cm3 has been investigated. Sn is a well behaved donor to about n=1020 cm−3, although in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::be0ac198f9d8635100ab0eba0380d82f
https://doi.org/10.1063/1.102542
https://doi.org/10.1063/1.102542
Autor:
W. F. Connelly, James Alexander Liddle, Warren K. Waskiewicz, Anthony E. Novembre, Harry H. Wade, Chester S. Knurek, L. Rutberg, R. DeMarco, C. Biddick, J. P. Custy, A. H. Crorken, J. S. Kraus, Joseph A. Felker, Pat G. Watson, K. S. Werder, H. A. Huggins, Stephen W. Bowler, Lloyd R. Harriott, Milton L. Peabody, Richard J. Kasica, R. R. Freeman, K. Brady, Steven D. Berger, Regine G. Tarascon-Auriol, Myrtle I. Blakey, Masis Mkrtchyan, L. Fetter, Reginald C. Farrow, R. M. Camarda, David Lee Windt, L. C. Hopkins
Publikováno v:
SPIE Proceedings.
We have designed, constructed, and are now performing experiments with a proof-of-concept projection electron-beam lithography system based upon the SCALPELR (scattering with angular limitation projection electron-beam lithography) principle. This in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d3d93d805409ef28706da473d83f37ee
https://doi.org/10.1117/12.275786
https://doi.org/10.1117/12.275786
Autor:
J. J. Plombon, Gabriel Lorimer Miller, Joseph Edward Griffith, L. C. Hopkins, E. Snyder, Jeffery B. Bindell, Leonid Vasilyev, Charles E. Bryson
Publikováno v:
SPIE Proceedings.
One of the fundamental requirements for reliable critical dimension measurement with a scanning probe microscope is stability of the stylus against flexing and against erosion. We report on the wear of an etched optical fiber when scanned across a va
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15345212278ac38fe131e5aee41e1974
https://doi.org/10.1117/12.275932
https://doi.org/10.1117/12.275932