Zobrazeno 1 - 10
of 796
pro vyhledávání: '"L C Hopkins"'
Autor:
Lanciotti, Lionello
Publikováno v:
East and West, 1954 Jul 01. 5(2), 152-152.
Externí odkaz:
https://www.jstor.org/stable/29753582
Autor:
Boxer, C. R.
Publikováno v:
Journal of the Royal Asiatic Society of Great Britain and Ireland, 1955 Apr 01(1/2), 75-76.
Externí odkaz:
https://www.jstor.org/stable/25581332
Autor:
C. R. Boxer
Publikováno v:
Journal of the Royal Asiatic Society. 87:75-76
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::69b532083018feef44e90040a38a0ca3
https://doi.org/10.1017/s0035869x00107038
https://doi.org/10.1017/s0035869x00107038
Publikováno v:
Ladies' Knapsack; 01/02/1864, Issue 6, p2-2, 1/8p
Publikováno v:
Frank Leslie's Chimney Corner; 06/22/1867, Vol. 5 Issue 108, p58-58, 1/9p
Autor:
Timothy D. Harris, Rose Kopf, Y. Anand, L. C. Hopkins, W.D. Braddock, J. Nagle, Robert Hull, M. Geva, M. Micovic, Roger J. Malik, R. W. Ryan, J. M. Vandenberg
Publikováno v:
Journal of Crystal Growth. 127:686-689
Carbon-doped GaAs and Al x Ga 1-x As epilayers have been grown by solid source MBE using resistively heated, pyrolytic graphite filaments for the carbon source. These films were characterized by SIMS, Van der Pauw, X-ray diffraction, photoluminescenc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e35d7be681d44e888072200e1a0f38f
https://doi.org/10.1016/0022-0248(93)90711-5
https://doi.org/10.1016/0022-0248(93)90711-5
Autor:
J. D. Wynn, George John Zydzik, John Lopata, David Reese Peale, William Scott Hobson, James H. J. Yeh, Rob Chichester, Afshin Partovi, Cherry A. Murray, Kirk W. Baldwin, Matthias Wuttig, L. C. Hopkins, Lisa Dhar
Publikováno v:
Applied Physics Letters. 75:1515-1517
A laser light source for high-resolution near-field optics applications with an output power exceeding 1 mW (104 times the power from previous sources) and small (300 nm square to less than 50 nm square) output beam size is demonstrated. The very-sma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39bc56fd86bb0de8ac63c3519bfc436d
https://doi.org/10.1063/1.124740
https://doi.org/10.1063/1.124740
Publikováno v:
Physical Review B. 42:1364-1368
Demonstration de l'influence de l'ancrage du niveau de Fermi a la surface d'un semiconducteur sur la distribution en dopant. Il resulte de la derive de l'impurete durant la croissance du cristal par epitaxie par jet moleculaire. L'etude par spectrosc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6ad90522e76cb2595637586d9662f1a2
https://doi.org/10.1103/physrevb.42.1364
https://doi.org/10.1103/physrevb.42.1364
Publikováno v:
Journal of Applied Physics. 67:1969-1979
Spatial localization of Be in δ‐doped GaAs within few lattice constants (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6576b6672e7a9328485cf3d56eb428db
https://doi.org/10.1063/1.345576
https://doi.org/10.1063/1.345576
Publikováno v:
The Journal of Bone & Joint Surgery. 77:1565-1567
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7b079279d23d34b01c345e9513d6e1f6
https://doi.org/10.2106/00004623-199510000-00012
https://doi.org/10.2106/00004623-199510000-00012