Zobrazeno 1 - 10
of 23
pro vyhledávání: '"L C, Olsen"'
Autor:
L. C. Olsen
This program has involved investigations of the stability of CdTe and copper-indium-gallium-diselenide (CIGS) solar cells under damp heat conditions and effects of barrier coatings.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::06dccfd309a289977938b36c4b38be00
https://doi.org/10.2172/973968
https://doi.org/10.2172/973968
Autor:
L. C. Olsen
This report summaries work carried out in three areas: CIGSS cells based on ZnO buffer layers, cells with ZnS buffer layers, and general studies of the effects of buffer layers on device performance. These investigations were conducted mainly with CI
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::127fa5df192c141abfd2fba849a4d042
https://doi.org/10.2172/15003609
https://doi.org/10.2172/15003609
Publikováno v:
Applied Physics Letters. 60:2054-2056
A novel guided‐wave electroabsorption modulator, based on separate confinement of the optical modes and the applied electric field, is described. When demonstrated for 633 nm light using AlGaAs waveguide technology, the concept provides low inserti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df61b3f2cb28576866b18aed46549ea5
https://doi.org/10.1063/1.107087
https://doi.org/10.1063/1.107087
Autor:
L. C. Olsen
The focus of the Phase 1 effort concerned further development of ZnO buffer layers. This work included further optimization of the metal-organic chemical vapor deposition (MOCVD) growth process and investigations of the interaction of zinc and oxygen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6cb3578e64ccfaa0472772e4afd2ab40
https://doi.org/10.2172/754633
https://doi.org/10.2172/754633
Autor:
R L, Streeton, S, Cable, H, Lysy, J A, Nelson, J A, Muncie, L C, Olsen, T, Ross, M, Caulfield
Publikováno v:
Quality assurance (San Diego, Calif.). 3(2)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::1c413bd3adaee891eb46517450d36950
https://pubmed.ncbi.nlm.nih.gov/7804638
https://pubmed.ncbi.nlm.nih.gov/7804638
Autor:
H E, Krokan, L C, Olsen, R, Aasland, G, Volden, G, Eggset, B, Myrnes, B, Johansen, A, Haugen, D E, Helland
Publikováno v:
Basic life sciences. 53
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::9da27242f7cafc52a05e034ae12bf3c8
https://pubmed.ncbi.nlm.nih.gov/2282034
https://pubmed.ncbi.nlm.nih.gov/2282034
Publikováno v:
The Journal of Chemical Physics. 60:2050-2056
Electrical transport properties of semiconducting single crystal Nd2S3, Gd2S3, and Dy2S3 (Th3P4, bcc structure) have been investigated between 80 and 300°K. Electrical resistivity (ρ), Hall coefficient (RH), and thermoelectric power (α), all measu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dad1be95d8f4c4df52f42789c9a968d1
https://doi.org/10.1063/1.1681315
https://doi.org/10.1063/1.1681315
Publikováno v:
Journal of Applied Physics. 51:6393-6398
Investigations have been made of Al‐pSi metal‐insulator semiconductor (MIS) cells fabricated by depositing Al films onto silicon substrates with thermally grown SiO2 surface films on the order of 18 A thick. These studies have involved depth conc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::56e9a563571791530118fc4a22f72683
https://doi.org/10.1063/1.327628
https://doi.org/10.1063/1.327628
Autor:
L. C. Olsen, J. W. Culvahouse
Publikováno v:
Physical Review. 152:409-415
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8c96977be541253ce02002065f444e6
https://doi.org/10.1103/physrev.152.409
https://doi.org/10.1103/physrev.152.409