Zobrazeno 1 - 10
of 41
pro vyhledávání: '"L C, Jenkins"'
Autor:
Tin S. Cheng, D.E. Lacklison, D J Dewsnip, A. V. Andrianov, J.W. Orton, C. T. Foxon, S. E. Hooper, L. C. Jenkins
Publikováno v:
Solid-State Electronics. 41:219-222
We report the results of photoluminescence measurements of four MBE samples of GaN doped with Si at levels in the range 10 17 –10 19 cm −3 . At the lower doping levels the near band edge emission is consistent with exciton recombination, being do
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d920ee70c293d80516ed6296c42b159
https://doi.org/10.1016/s0038-1101(96)00170-0
https://doi.org/10.1016/s0038-1101(96)00170-0
Autor:
D.E. Lacklison, J.W. Orton, S. E. Hooper, L. C. Jenkins, Tin S. Cheng, C. T. Foxon, J.D. Dewsnip
Publikováno v:
Journal of Crystal Growth. 166:597-600
Both zinc-blende and wurtzite GaN layers were grown by a modified molecular beam epitaxy (MBE) method. These layers were grown on semi-insulating GaAs(100) substrates and doped with silicon and beryllium as n- and p-type dopants. The structure of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4fd0d11359fb1df213ff60516942c487
https://doi.org/10.1016/0022-0248(96)00057-7
https://doi.org/10.1016/0022-0248(96)00057-7
Autor:
Thomas Dumelow, C. T. Foxon, L. C. Jenkins, T. J. Parker, S. Farjami Shayesteh, G. Mirjalili, D.E. Lacklinson, Tin S. Cheng
Publikováno v:
Infrared Physics & Technology. 37:389-394
The far infrared optical properties of a selection of thin GaN epilayers on GaP substrates have been investigated at room temperature by oblique incidence reflection spectroscopy in p- and s-polarization. The GaN layers were deposited in the cubic, w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::684fc50739c3f36b9e0e7b5c387aa3ab
https://doi.org/10.1016/1350-4495(95)00072-0
https://doi.org/10.1016/1350-4495(95)00072-0
Autor:
Tin S. Cheng, B. Ya. Ber, Sergei V. Novikov, L. C. Jenkins, S. E. Hooper, J.W. Orton, C. T. Foxon, D.E. Lacklison, A. V. Merkulov
Publikováno v:
Semiconductor Science and Technology. 11:538-541
We have studied the incorporation of Be and Si in GaN grown using molecular beam epitaxy (MBE). From secondary-ion mass spectroscopy (SIMS) measurements, Be was found to have an enhanced diffusion rate at high concentration similar to the behaviour o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78e5d84066b637e2c532ab86adfb6208
https://doi.org/10.1088/0268-1242/11/4/014
https://doi.org/10.1088/0268-1242/11/4/014
Autor:
S. E. Hooper, C. T. Foxon, J.W. Orton, V. V. Tret'yakov, L. C. Jenkins, T. B. Popova, Sergei V. Novikov, Tin S. Cheng
Publikováno v:
Journal of Crystal Growth. 158:399-402
Films of Ga(AsN) and Al(AsN) have been grown using a modified molecular beam epitaxy method. In both cases the concentration of nitrogen incorporated is directly proportional to the amount of active nitrogen reaching the sample surface. For the Ga(As
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c360f19e654dbdc60e31abdd5ea89234
https://doi.org/10.1016/0022-0248(95)00551-x
https://doi.org/10.1016/0022-0248(95)00551-x
Autor:
T. Bestwick, D.E. Lacklison, Martin D. Dawson, Geoffrey Duggan, J.W. Orton, C. T. Foxon, Alistair Henderson Kean, L. C. Jenkins, Tin S. Cheng, S. E. Hooper
Publikováno v:
Journal of Crystal Growth. 155:157-163
We have investigated how supplying active nitrogen from an RF activated plasma source under various plasma conditions influences certain aspects of the growth of GaN films on GaAs(100) substrates, using molecular beam epitaxy. In the first instance,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::44212ac4b94065ce4fad447e8591ddac
https://doi.org/10.1016/0022-0248(95)00216-2
https://doi.org/10.1016/0022-0248(95)00216-2
Autor:
S. E. Hooper, J.W. Orton, B Y Averbukh, L. C. Jenkins, I. D. Yaroshetskii, C. T. Foxon, S T Cheng, N. N. Zinov’ev, A. V. Andrianov
Publikováno v:
Semiconductor Science and Technology. 10:1117-1121
We report comprehensive photoluminescence, Raman scattering and photoluminescence excitation data on GaN layers grown by MBE on GaAs and GaP substrates. The main photoluminescence feature of GaN layers corresponds to the recombination of free carrier
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0363d4de565ca8b63229dd52c1671686
https://doi.org/10.1088/0268-1242/10/8/011
https://doi.org/10.1088/0268-1242/10/8/011
Autor:
Sergei V. Novikov, D. Johnston, V. V. Tret'yakov, S. E. Hooper, T.L. Tansley, D.E. Lacklison, L. C. Jenkins, C. T. Foxon, J.W. Orton, N. Baba-Ali, Tin S. Cheng
Publikováno v:
Journal of Crystal Growth. 150:892-896
We have studied a novel material system (AlGa)(AsN), which can be lattice matched to GaP (or more importantly Si), grown using a low temperature modified molecular beam epitaxy (MBE) technique to reduce the density of native defects. Active nitrogen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1dc4ee3b47fd19b98bd320f231c593f9
https://doi.org/10.1016/0022-0248(95)80068-n
https://doi.org/10.1016/0022-0248(95)80068-n
Autor:
J. W. Orton, D. E. Lacklison, N. Baba-Ali, C. T. Foxon, T. S. Cheng, S. V. Novikov, D. F. C. Johnston, S. E. Hooper, L. C. Jenkins, L. J. Challis, T. L. Tansley
Publikováno v:
Journal of Electronic Materials. 24:263-268
Bearing in mind the problems of finding a lattice-matched substrate for the growth of binary group III nitride films and the detrimental effect of the large activation energy associated with acceptors in GaN, we propose the study of the alloy system
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c6c28e5fe02ca6deca7dbcc9aed5315a
https://doi.org/10.1007/bf02659685
https://doi.org/10.1007/bf02659685
Publikováno v:
Journal of Solid State Chemistry. 106:150-155
The epitaxial growth of the rare earth fluorides HoF 3 and GdF 3 on Ge, Si, and GaAs has been investigated. At the same time the detailed nature of the interfaces formed has been probed by X-ray photoelectron spectroscopy. Epitaxial layers can readil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d6695dc93fe31984b2957b9314fd9f9a
https://doi.org/10.1006/jssc.1993.1274
https://doi.org/10.1006/jssc.1993.1274