Zobrazeno 1 - 10
of 172
pro vyhledávání: '"L A, Vorob'ev"'
Autor:
L. Ya. Karachinsky, Innokenty I. Novikov, D. A. Firsov, D. V. Denisov, Nikita A. Pikhtin, A. Yu. Egorov, A. V. Lutetskiy, Vladislav V. Dudelev, L. E. Vorob’ev, E. S. Kolodeznyi, A. G. Gladyshev, A. S. Kurochkin, Grigorii S. Sokolovskii, D. A. Pashnev, Sergey O. Slipchenko, A. V. Babichev
Publikováno v:
Optics and Spectroscopy. 128:1187-1192
A cavity scheme based on a half-ring with different radii is proposed and fabricated for 7–8 μm quantum-cascade lasers. A quantum-cascade laser with a half-ring cavity radius of 191 μm demonstrated lasing with a spectral width of 474 nm (82 cm–
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d150403584f7d34733ecd0868541a5bd
https://doi.org/10.1134/s0030400x20080068
https://doi.org/10.1134/s0030400x20080068
Autor:
L. E. Vorob’ev, D. V. Denisov, A. G. Gladyshev, M. I. Mitrofanov, Innokenty I. Novikov, D. A. Firsov, V. P. Evtikhiev, D. A. Pashnev, A. V. Babichev, G. V. Voznyuk, Nikita A. Pikhtin, A. Yu. Egorov, L. Ya. Karachinsky
Publikováno v:
Technical Physics Letters. 46:312-315
Single-mode lasing of quantum-cascade lasers with a distributed Bragg reflector formed by ion-beam etching in layers of the upper waveguide cladding is demonstrated. The active region is formed based on an In0.53Ga0.47As/Al0.48In0.52As solid-alloy he
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::70b4bc221cf6f2abc89d9e8112b3b488
https://doi.org/10.1134/s1063785020040033
https://doi.org/10.1134/s1063785020040033
Autor:
N. D. Il’inskaya, A. N. Sofronov, A. V. Babichev, V. V. Dyudelev, L. Ya. Karachinsky, V. N. Nevedomskii, G. A. Gusev, Yu. M. Zadiranov, A. G. Gladyshev, Innokenty I. Novikov, A. A. Usikova, Grigorii S. Sokolovskii, L. E. Vorob’ev, D. A. Firsov, A. Yu. Egorov
Publikováno v:
Technical Physics. 63:1511-1515
Lasing in MBE-grown impulsively pumped quantum cascade lasers of 9.6 μm at 140 K has been demonstrated. The active area is based on three-phonon resonance scattering of electrons. An In0.53Ga0.47As/Al0.48In0.52As solid alloy heteropair was used to f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e9b87d9374bde4e2d3fe086fbdf481d
https://doi.org/10.1134/s1063784218100043
https://doi.org/10.1134/s1063784218100043
Autor:
Nikolai A. Maleev, Yu. M. Zadiranov, A. A. Usikova, L. E. Vorob’ev, V. V. Mamutin, N. D. Il’inskaya, A. V. Lyutetskii, A. P. Vasil’ev, A. N. Sofronov, V. M. Ustinov, D. A. Firsov
Publikováno v:
Technical Physics Letters. 44:814-816
We report on room-temperature generation at the 4.8-μm wavelength in a lattice-matched structure of a quantum cascade laser (QCL) grown on indium phosphide (InP) substrate. Laser heterostructures grown by molecular beam epitaxy (MBE) comprised 30 ca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::848da4c1a21f70a43db16ee7d11819c7
https://doi.org/10.1134/s1063785018090249
https://doi.org/10.1134/s1063785018090249
Autor:
Henri Nykänen, V. F. Agekyan, Vadim A. Shalygin, Sami Suihkonen, G. A. Melentyev, L. E. Vorob’ev, A. Yu. Serov, N. G. Filosofov
Publikováno v:
Physics of the Solid State. 55:296-300
Optical spectra and electrical conductivity of silicon-doped epitaxial gallium nitride layers with uncompensated donor concentrations N D — N A up to 4.8 × 1019 cm−3 at T ≈ 5 K have been studied. As follows from the current-voltage characteris
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3645ad95a86604c4527407150ff7ec79
https://doi.org/10.1134/s1063783413020029
https://doi.org/10.1134/s1063783413020029
Publikováno v:
Physics of the Solid State. 54:2362-2373
The current-induced optical activity in a tellurium single crystal has been experimentally investigated in the mid-infrared spectral region. The phenomenological theory of the current-induced optical activity has been considered and the microscopic m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a4040e62c2002a2a9ce605d4ecf484c
https://doi.org/10.1134/s1063783412120281
https://doi.org/10.1134/s1063783412120281
Autor:
V. Ya. Aleshkin, D. A. Firsov, V. Yu. Panevin, A. V. Antonov, A. P. Vasil’ev, M. S. Zholudev, A. E. Zhukov, L. E. Vorob’ev
Publikováno v:
Physics of the Solid State. 53:1253-1262
The spectrum of impurity photoabsorption of a heterostructure with quantum wells doped with shallow donors has been calculated in the energy range close to the optical phonon energy. It has been shown that the resonant feature of photoconductivity (F
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::66bfc2848ad4f3ae9006d6b088159d3c
https://doi.org/10.1134/s1063783411060035
https://doi.org/10.1134/s1063783411060035
Autor:
A. N. Sofronov, Sergey Ganichev, A. E. Zhukov, L. E. Vorob’ev, Vadim A. Shalygin, M. Ya. Vinnichenko, D. A. Firsov, V. Yu. Panevin, Sergey Danilov, P. Thumrongsilapa
Publikováno v:
Bulletin of the Russian Academy of Sciences: Physics. 74:82-85
Optical phenomena in GaAs/AlGaAs quantum well nanostructures doped with acceptors were studied in the mid-IR spectral range. Equilibrium abso rption spectra were measured in a wide temperature range. Modulation of absorption in the presence of a stro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::efa233dd49775e3dd191f9ffcfd7acc2
https://doi.org/10.3103/s1062873810010223
https://doi.org/10.3103/s1062873810010223
Autor:
V. L. Zerova, Gregory Belenky, I. S. Tarasov, L. E. Vorob’ev, K. S. Borshchev, Z. N. Sokolova
Publikováno v:
Semiconductors. 42:737-745
The charge-carrier concentration and the temperature of hot electrons and holes in quantum-well laser nanostructures in the regimes of spontaneous and stimulated emission are determined as functions of the current density j, with InGaAs/GaAs structur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d68b2d5b9f416e787b1b22ca11695d3
https://doi.org/10.1134/s1063782608060171
https://doi.org/10.1134/s1063782608060171
Publikováno v:
Semiconductors. 41:596-605
Modulation of absorption of middle-infrared radiation in double tunneling-coupled quantum wells in longitudinal electric fields is studied. A specific feature of the quantum wells is the small separation in energy between the two lower levels. As a c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::83ab0c9a0b2cfef34d01aaec192a0687
https://doi.org/10.1134/s1063782607050211
https://doi.org/10.1134/s1063782607050211