Zobrazeno 1 - 10
of 143
pro vyhledávání: '"Lüscher, S."'
Spin currents in channels of a high mobility GaAs/AlGaAs two-dimensional electron gas are generated and detected using spin-polarized quantum point contacts. We have recently shown that the relaxation length of spin currents is resonantly suppressed
Externí odkaz:
http://arxiv.org/abs/1208.3106
Spin relaxation can be greatly enhanced in narrow channels of two-dimensional electron gas due to ballistic spin resonance, which is mediated by spin-orbit interaction for trajectories that bounce rapidly between channel walls. The channel orientatio
Externí odkaz:
http://arxiv.org/abs/1009.5702
Recent experiments demonstrate that a ballistic version of spin resonance, mediated by spin-orbit interaction, can be induced in narrow channels of a high-mobility GaAs two-dimensional electron gas by matching the spin precession frequency with the f
Externí odkaz:
http://arxiv.org/abs/1004.0768
Publikováno v:
Nature 413, 822 (2001)
Ring geometries have fascinated experimental and theoretical physicists over many years. Open rings connected to leads allow the observation of the Aharonov-Bohm effect, a paradigm of quantum mechanical phase coherence. The phase coherence of transpo
Externí odkaz:
http://arxiv.org/abs/cond-mat/0109113
Publikováno v:
Phys. Rev. B 63, 125309 (2001)
Quantum dots are fabricated in a Ga[Al]As-heterostructure by local oxidation with an atomic force microscope. This technique, in combination with top gate voltages, allows us to generate steep walls at the confining edges and small lateral depletion
Externí odkaz:
http://arxiv.org/abs/cond-mat/0009344
Autor:
Doetsch, U., Gennser, U., Heinzel, T., Luescher, S., David, C., Dehlinger, G., Gruetzmacher, D., Ensslin, K.
Publikováno v:
Appl. Phys. Lett. 78, 341 (2001)
A single hole transistor is patterned in a p-Si/SiGe quantum well by applying voltages to nanostructured top gate electrodes. Gating is achieved by oxidizing the etched semiconductor surface and the mesa walls before evaporation of the top gates. Pro
Externí odkaz:
http://arxiv.org/abs/cond-mat/0009323
Publikováno v:
Phys. Rev. Lett. 86, 2114 (2001)
Coulomb blockade resonances are measured in a GaAs quantum dot in which both shape deformations and interactions are small. The parametric evolution of the Coulomb blockade peaks shows a pronounced pair correlation in both position and amplitude, whi
Externí odkaz:
http://arxiv.org/abs/cond-mat/0002226
Publikováno v:
Appl. Phys. Lett. 75, 2452 (1999)
A single-electron transistor has been realized in a Ga[Al]As heterostructure by oxidizing lines in the GaAs cap layer with an atomic force microscope. The oxide lines define the boundaries of the quantum dot, the in-plane gate electrodes, and the con
Externí odkaz:
http://arxiv.org/abs/cond-mat/9909340
Publikováno v:
Physical Review B 61, R13353 (2000)
A quantum wire is spatially displaced by suitable electric fields with respect to the scatterers inside a semiconductor crystal. As a function of the wire position, the low-temperature resistance shows reproducible fluctuations. Their characteristic
Externí odkaz:
http://arxiv.org/abs/cond-mat/9909337
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