Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Lény Baczkowski"'
Autor:
Dominique Carisetti, Olivier Jardel, Lény Baczkowski, Jean-Claude Jacquet, Maxime Olivier, Sylvain Delage, Raphaël Aubry, Didier Lancereau, Stéphane Piotrowicz, Marie-Antoinette Poisson, Christian Dua
Publikováno v:
International Journal of Microwave and Wireless Technologies. 6:565-572
This paper presents power results of L-band packaged hybrid amplifiers using InAlN/GaN/SiC HEMT power dies. The high-power densities achieved both in pulsed and continuous wave (cw) modes confirm the interest of such technology for high-frequency, hi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d8fbd82a61444e82ce791a80d4d0ed3
https://doi.org/10.1017/s175907871400004x
https://doi.org/10.1017/s175907871400004x
Autor:
Jean-Claude Jacquet, Jean-Claude Clement, Laurent Brunel, Benoit Lambert, Christophe Gaquiere, Lény Baczkowski, Dominique Carisetti, N. Sarazin, Franck Vouzelaud
Publikováno v:
International Symposium for Testing and Failure Analysis.
This paper shows a specific approach based on infrared (IR) thermography to face the challenging aspects of thermal measurement, mapping, and failure analysis on AlGaN/GaN high electron-mobility transistors (HEMTs) and MMICs. In the first part of thi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b2ddbbb8d049f0eddfe8176d9ad59ba
https://doi.org/10.31399/asm.cp.istfa2015p0253
https://doi.org/10.31399/asm.cp.istfa2015p0253
Autor:
Olivier Jardel, Myriam Moreau, Dominique Carisetti, Lény Baczkowski, Jean-Claude Jacquet, Laurent Brunel, Franck Vouzelaud, Christophe Gaquiere
Publikováno v:
2015 10th European Microwave Integrated Circuits Conference (EuMIC).
Performance and reliability of a high power amplifier are correlated with its thermal behavior. Thermal model development and suitable temperature measurement systems are necessary to quantify the channel temperature of devices in real operating cond
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fcabdacfad1a865b294e1d1e217e8003
https://doi.org/10.1109/eumic.2015.7345091
https://doi.org/10.1109/eumic.2015.7345091
Autor:
Olivier Jardel, Dominique Carisetti, Chistophe Gaquiere, Laurent Brunel, Yves Mancuso, Lény Baczkowski, Franck Vouzelaud, Myriam Moreau, Jean-Claude Jacquet
Publikováno v:
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2015, 62, pp.3992-3998. ⟨10.1109/TED.2015.2493204⟩
IEEE Transactions on Electron Devices, 2015, 62, pp.3992-3998. ⟨10.1109/TED.2015.2493204⟩
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2015, 62, pp.3992-3998. ⟨10.1109/TED.2015.2493204⟩
IEEE Transactions on Electron Devices, 2015, 62, pp.3992-3998. ⟨10.1109/TED.2015.2493204⟩
Performance and reliability of wide bandgap high-power amplifiers are correlated with their thermal behavior. Thermal model development and suitable temperature measurement systems are necessary to quantify the channel temperature of devices in real
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::81be6893a21ab7ce20266de13a4fab9b
https://hal.archives-ouvertes.fr/hal-01348823
https://hal.archives-ouvertes.fr/hal-01348823
Autor:
Lény Baczkowski, Dustin Kendig, Dominique Carisetti, Christophe Gaquiere, Franck Vouzelaud, Jean-Claude Jacquet
Publikováno v:
20th International Workshop on Thermal Investigations of ICs and Systems.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b6a23c79175d6b1b50e38b5ff1d5709f
https://doi.org/10.1109/therminic.2014.6972538
https://doi.org/10.1109/therminic.2014.6972538
Autor:
A. Djouadi, Stéphane Piotrowicz, Nadjib Semmar, Sylvain Delage, Raphaël Aubry, Eric Chartier, Y. Scudeller, J. Calus, Erhard Kohn, O. Patard, M. Oualli, J.C. Jacquet, K. Ait-Aissa, M. Gaillard, N. Michel, C. Leborgne, Lény Baczkowski, D. Lancereau, M.-A. di Forte Poisson, S. Bohbot
Publikováno v:
2014 Lester Eastman Conference on High Performance Devices (LEC).
Thin-film coatings for improved performances of GaN-based HEMTs are investigated. AlN coatings are used either as primary or secondary passivation to reduce the thermal resistance of the transistors.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::628447f57174e236b2fb0e352e3553ec
https://doi.org/10.1109/lec.2014.6951566
https://doi.org/10.1109/lec.2014.6951566