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Influence of spin-orbit interaction within the insulating barrier on the electron transport in magnetic tunnel junctions

Autor: S. Auffret, Nikita Strelkov, A.V. Vedyayev, N. Ryzhanova, Léa Cuchet, Mairbek Chshiev, B. Rodmacq, Maria Titova, Lavinia Elena Nistor, B. Dieny

Publikováno v: Physical Review B
Physical Review B: Condensed Matter and Materials Physics (1998-2015)
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2017, 95, pp.064420. ⟨10.1103/PhysRevB.95.064420⟩
Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2017, 95, pp.064420. ⟨10.1103/PhysRevB.95.064420⟩

International audience; We present a theory of the anisotropy of tunneling magnetoresistance (ATMR) phenomenon in magnetic tunnel junctions (MTJs) attributed to Rashba spin-orbit interaction in the insulating barrier. ATMR represents the difference o

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a0593fd785c325fce8b41d6e164a0345

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Perpendicular magnetic tunnel junctions with a synthetic storage or reference layer: A new route towards Pt- and Pd-free junctions

Autor: Bernard Dieny, Ricardo C. Sousa, B. Rodmacq, Léa Cuchet, Stéphane Auffret, I. L. Prejbeanu

Publikováno v: Scientific Reports
Scientific Reports, Nature Publishing Group, 2016, 6, pp.21246. ⟨10.1038/srep21246⟩
Scientific Reports, 2016, 6, pp.21246. ⟨10.1038/srep21246⟩

We report here the development of Pt and Pd-free perpendicular magnetic tunnel junctions (p-MTJ) for STT-MRAM applications. We start by studying a p-MTJ consisting of a bottom synthetic Co/Pt reference layer and a synthetic FeCoB/Ru/FeCoB storage lay

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::35102fdb17ace95b5702bccb60f3a092
https://hal.archives-ouvertes.fr/hal-02131668/file/Cuchet_PdFree_2016.pdf

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Double magnetic tunnel junctions with perpendicular anisotropy

Autor: Léa Cuchet, B. Dieny, Ricardo C. Sousa, I. L. Prejbeanu, Stéphane Auffret

Publikováno v: 2015 IEEE Magnetics Conference (INTERMAG).

Magnetic Tunnel Junctions (MTJs) with perpendicular anisotropy have been studied extensively in recent years since their remarkable properties (high write speed, scalability, endurance, low critical current density for Spin Transfer Torque (STT) swit

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3e43a7dc8856a6e3549f601bb12ba90a
https://doi.org/10.1109/intmag.2015.7157061

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Perpendicular magnetic tunnel junctions with double barrier and single or synthetic antiferromagnetic storage layer

Autor: Stéphane Auffret, Bernard Rodmacq, Bernard Dieny, Ricardo C. Sousa, Léa Cuchet, I. L. Prejbeanu

Publikováno v: Journal of Applied Physics
Journal of Applied Physics, 2015, 117 (23), pp.233901. ⟨10.1063/1.4922630⟩
Journal of Applied Physics, American Institute of Physics, 2015, 117 (23), pp.233901. ⟨10.1063/1.4922630⟩

International audience; The magnetic properties of double tunnel junctions with perpendicular anisotropy were investigated. Two synthetic antiferromagnetic references are used, while the middle storage magnetic layer can be either a single ferromagne

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a6779c7900d9f19493195d30e5fc9226
https://hal.science/hal-01589475

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Field Dependence of Spin-Transfer Torque Switching Current in Perpendicular Magnetic Tunnel Junctions

Autor: Ricardo Sousa, Bernard Rodmacq, Bernard Dieny, Léa Cuchet, Laurent Vila, Stéphane Auffret

Publikováno v: IEEE Transactions on Magnetics
IEEE Transactions on Magnetics, Institute of Electrical and Electronics Engineers, 2014, 50 (11), pp.1-4. ⟨10.1109/TMAG.2014.2322390⟩
IEEE Transactions on Magnetics, 2014, 50 (11), pp.1-4. ⟨10.1109/TMAG.2014.2322390⟩

Spin-transfer torque switching has been studied on (Co/Pt)/Ta/CoFeB/MgO/FeCoB/Ta patterned perpendicular magnetic tunnel junctions with nanopillar diameters ranging between 100 and 300 nm. Plotting current-field state diagrams, the critical current d

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bc788b03c5332a7ac3af5d6a2478aff9
https://hal.archives-ouvertes.fr/hal-02042856

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Influence of a Ta spacer on the magnetic and transport properties of perpendicular magnetic tunnel junctions

Autor: Bernard Dieny, Clarisse Ducruet, Léa Cuchet, Bernard Rodmacq, Stéphane Auffret, Ricardo C. Sousa

Publikováno v: Applied Physics Letters
Applied Physics Letters, American Institute of Physics, 2013, 103 (5), pp.052402. ⟨10.1063/1.4816968⟩
Applied Physics Letters, 2013, 103 (5), pp.052402. ⟨10.1063/1.4816968⟩

International audience; Ultrathin Ta layers were inserted in the bottom hard (Co/Pt)/Ta/CoFeB/MgO magnetic electrode of perpendicular magnetic tunnel junctions. The magnetization of the top part of this electrode abruptly falls in-plane when the Ta t

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9279478ff76d61f9ef1298f8637b3932
https://hal-cea.archives-ouvertes.fr/cea-01073021/file/Cuchet2013.pdf

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Influence of magnetic electrodes thicknesses on the transport properties of magnetic tunnel junctions with perpendicular anisotropy

Autor: Stéphane Auffret, Ricardo Sousa, Léa Cuchet, Bernard Rodmacq, Bernard Dieny

Publikováno v: Applied Physics Letters
Applied Physics Letters, American Institute of Physics, 2014, 105 (5), pp.052408. ⟨10.1063/1.4892450⟩
Applied Physics Letters, 2014, 105 (5), pp.052408. ⟨10.1063/1.4892450⟩

International audience; The influence of the bottom and top magnetic electrodes thicknesses on both perpendicular anisotropy and transport properties is studied in (Co/Pt)/Ta/CoFeB/MgO/FeCoB/Ta magnetic tunnel junctions. By carefully investigating th

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a6febed283a12e36d5e753cdae902771
https://doi.org/10.1063/1.4892450

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