Zobrazeno 1 - 10
of 195
pro vyhledávání: '"Lähnemann, Jonas"'
Autor:
Chen, Wenshan, Egbo, Kingsley, Kler, Joe, Falkenstein, Andreas, Lähnemann, Jonas, Bierwagen, Oliver
Rutile GeO$_2$ is a promising ultra-wide bandgap semiconductor for future power electronic devices whose alloy with the wide bandgap semiconductor rutile-SnO$_2$ enables bandgap engineering and the formation of heterostructure devices. The (Sn$_x$Ge$
Externí odkaz:
http://arxiv.org/abs/2410.14527
Autor:
Kang, Jingxuan, Ruiz, Mikel Gómez, Van Dinh, Duc, Campbell, Aidan F, John, Philipp, Auzelle, Thomas, Trampert, Achim, Lähnemann, Jonas, Brandt, Oliver, Geelhaar, Lutz
500-nm-thick $\mathrm{In}_{x}\mathrm{Ga}_{1-x}\mathrm{N}$ layers with $x=$ 0.05-0.14 are grown using plasma-assisted molecular beam epitaxy, and their properties are assessed by a comprehensive analysis involving x-ray diffraction, secondary ion mass
Externí odkaz:
http://arxiv.org/abs/2410.04206
Autor:
Kang, Jingxuan, Jose, Rose-Mary, Oliva, Miriam, Auzelle, Thomas, Ruiz, Mikel Gómez, Tahraoui, Abbes, Lähnemann, Jonas, Brandt, Oliver, Geelhaar, Lutz
The dewetting of thin Pt films on different surfaces is investigated as a means to provide the patterning for the top-down fabrication of GaN nanowire ensembles. The transformation from a thin film to an ensemble of nanoislands upon annealing proceed
Externí odkaz:
http://arxiv.org/abs/2402.14375
Autor:
John, Philipp, Trampert, Achim, Van Dinh, Duc, Spallek, Domenik, Lähnemann, Jonas, Kaganer, Vladimir, Geelhaar, Lutz, Brandt, Oliver, Auzelle, Thomas
We study the molecular beam epitaxy of rock-salt ScN on the wurtzite GaN($1\bar{1}00$) surface. To this end, ScN is grown on free-standing GaN($1\bar{1}00$) substrates and self-assembled GaN nanowires that exhibit ($1\bar{1}00$) sidewalls. On both su
Externí odkaz:
http://arxiv.org/abs/2402.00702
Autor:
Ruiz, M Gómez, Castro, Aron, Herranz, Jesús, da Silva, Alessandra, Trampert, Achim, Brandt, Oliver, Geelhaar, Lutz, Lähnemann, Jonas
(In,Ga) alloy droplets are used to catalyse the growth of (In,Ga)As nanowires by molecular beam epitaxy on Si(111) substrates. The composition, morphology and optical properties of these nanowires can be tuned by the employed elemental fluxes. To inc
Externí odkaz:
http://arxiv.org/abs/2310.05582
Autor:
van Treeck, David, Lähnemann, Jonas, Gao, Guanhui, Garrido, Sergio Fernández, Brandt, Oliver, Geelhaar, Lutz
Publikováno v:
APL Materials 11, 091120 (2023)
Capitalizing on the directed nature of the atomic fluxes in molecular beam epitaxy, we propose and demonstrate the sequential directional deposition of lateral (In,Ga)N shells on GaN nanowires. In this approach, a sub-monolayer thickness of each cons
Externí odkaz:
http://arxiv.org/abs/2307.11235
Publikováno v:
Nanotechnology 34, 485603 (2023)
Using molecular beam epitaxy, we demonstrate the growth of (In,Ga)N shells emitting in the green spectral range around very thin (35 nm diameter) GaN core nanowires. These GaN nanowires are obtained by self-assembled growth on TiN. We present a quali
Externí odkaz:
http://arxiv.org/abs/2306.12787
An accurate knowledge of the optical constants (refractive index $n$ and extinction coefficient $k$) of ScN is crucial for understanding the optical properties of this binary nitride semiconductor as well as for its use in optoelectronic applications
Externí odkaz:
http://arxiv.org/abs/2306.09393
Autor:
John, Philipp, Ruiz, Mikel Gómez, van Deurzen, Len, Lähnemann, Jonas, Trampert, Achim, Geelhaar, Lutz, Brandt, Oliver, Auzelle, Thomas
Publikováno v:
Nanotechnology 34, 465605 (2023)
We study the molecular beam epitaxy of AlN nanowires between 950 and 1215 {\deg}C, well above the usual growth temperatures, to identify optimal growth conditions. The nanowires are grown by self-assembly on TiN(111) films sputtered onto Al$_2$O$_3$.
Externí odkaz:
http://arxiv.org/abs/2306.09184
Autor:
van Deurzen, Len, Singhal, Jashan, Encomendero, Jimy, Pieczulewski, Naomi, Chang, Celesta, Cho, YongJin, Muller, David Anthony, Xing, Huili Grace, Jena, Debdeep, Brandt, Oliver, Lähnemann, Jonas
Publikováno v:
APL Materials 11, 081109 (2023)
Using low-temperature cathodoluminescence spectroscopy, we study the properties of N- and Al-polar AlN layers grown by molecular beam epitaxy on bulk AlN{0001}. Compared to the bulk AlN substrate, layers of both polarities feature a suppression of de
Externí odkaz:
http://arxiv.org/abs/2305.10542