Zobrazeno 1 - 10
of 33
pro vyhledávání: '"L, Callejo"'
Publikováno v:
Munibe Antropologia-Arkeologia, Vol 65, Pp 177-195 (2014)
En el presente artículo se presenta los resultados de la excavación del Sondeo 3 del yacimiento prerromano de Monte Ornedo (Valdeolea, Cantabria), una estructura cuya compartimentación y funcionalidad parecen relacionarla con una sauna.
Externí odkaz:
https://doaj.org/article/ea0fbf5f71624b66883a9f3ecd4080a5
Publikováno v:
Acta Crystallographica Section E, Vol 66, Iss 3, Pp m249-m250 (2010)
In the title compound, [Fe(C24H16N6)2][N(CN)2]2·4.5H2O, the central iron(II) ion is hexacoordinated by six N atoms of two tridentate 2,3,5,6-tetra-2-pyridylpyrazine (tppz) ligands. Two dicyanamide anions [dca or N(CN)2−] act as counter-ions, and 4
Externí odkaz:
https://doaj.org/article/c0811217229647ba9d9eccbe56903516
Autor:
D. Leung, P. H. Liu, D. Eng, Mike Wojtowicz, Ioulia Smorchkova, Ronald W. Grundbacher, Y.C. Chou, Aaron K. Oki, L. Callejo, Q. Kan, R. Lai
Publikováno v:
Microelectronics Reliability. 44:1033-1038
Elevated temperature lifetesting was performed on 0.25 μm AlGaN/GaN HEMTs grown by MOCVD on 2-in. SiC substrates. A temperature step stress (starting at T a of 150 °C with a step of 15 °C; ending at T a of 240 °C; 48 h for each temperature cycle)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c0906ee1be9e310f2ece6798d96427b
https://doi.org/10.1016/j.microrel.2004.03.008
https://doi.org/10.1016/j.microrel.2004.03.008
Autor:
P.M. Gordón Ramos, J. Rosique Gracia, E. Rebato Ochoa, María Dolores Marrodán Serrano, L. Callejo Gea, M. González-Montero de Espinosa, E. Moreno Heras
Publikováno v:
Anales de Pediatría, Vol 54, Iss 5, Pp 468-476 (2001)
Objetivos: Describir el crecimiento estatural de una muestra de niños y jóvenes de ambos sexos mediante el modelo 1 de Preece-Baines (PB1) para obtener valores percentilares suavizados que sirvan de referencia. Asimismo, aplicar elPB1 a una serie d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dce4e0e14c48d752553fc2943a478eef
https://doi.org/10.1016/s1695-4033(01)77570-4
https://doi.org/10.1016/s1695-4033(01)77570-4
Publikováno v:
Acta Crystallographica Section E: Structure Reports
In the title compound, [Fe(C(24)H(16)N(6))(2)][N(CN)(2)](2)·4.5H(2)O, the central iron(II) ion is hexa-coordinated by six N atoms of two tridentate 2,3,5,6-tetra-2-pyridylpyrazine (tppz) ligands. Two dicyanamide anions [dca or N(CN)(2) (-)] act as c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::13332fea7b9435157de2c4f9e1fc6d87
https://pubmed.ncbi.nlm.nih.gov/21580205
https://pubmed.ncbi.nlm.nih.gov/21580205
Autor:
Q. Kan, L. Callejo, Y.C. Chou, D. Eng, D. Leung, Ronald W. Grundbacher, T. Block, A.K. Oki, M. Yu, Guann-Pyng Li, Richard Lai
Publikováno v:
2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual..
The effects of hot carrier stress testing on 0.15 /spl mu/m GaAs PHEMT MMIC power amplifiers under RF-drive at room temperature were investigated. The results show that output power degradation is induced by gate current generated from impact ionizat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::407827ebdfbb6ec3806930eb77002bfe
https://doi.org/10.1109/relphy.2005.1493157
https://doi.org/10.1109/relphy.2005.1493157
Autor:
Y.C. Chou, D. Eng, K. Kiyono, Q. Kan, M. Yu, A.K. Oki, D. Leung, Richard Lai, L. Callejo, B. Yamane, Ronald W. Grundbacher, D. Okazaki
Publikováno v:
2004 IEEE International Reliability Physics Symposium. Proceedings.
The degradation mechanism of 0.15 /spl mu/m GaAs PHEMTs subjected to three-temperature elevated lifetest (T/sub 1/=185/spl deg/C, T/sub 2/=200/spl deg/C, and T/sub 3/=215/spl deg/C ambient temperatures in N/sub 2/ atmosphere and stressed at Vds=5V/Id
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d5dbf9c6ed145b348f1441f7555f96d2
https://doi.org/10.1109/relphy.2004.1315372
https://doi.org/10.1109/relphy.2004.1315372
Autor:
R. Grundbacher, D. Eng, R. Lal, Q. Kan, L. Callejo, B. Allen, K. Lee, T. Block, M. Bledenbander, A. Okl, Y.C. Chou, D. Leung
Publikováno v:
JEDEC (formerly the GaAs REL Workshop) ROCS Workshop, 2004..
The dual gate layout configuration has become a versatile approach for compact and high performance MMIC design for commercial, and military/space applications. In this paper, we describe a method that was developed to lifetest compact (0.81 mm/sup 2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::346c4175332701f5d87a0e8c22997a8a
https://doi.org/10.1109/rocs.2004.184348
https://doi.org/10.1109/rocs.2004.184348
Autor:
L. Callejo, P.H. Liu, O. Kan, R. Grundbacher, R. Tsai, R. Lai, D. Eng, M. Wojitowicz, D. Leung, Y.C. Chou, I. Smorchkova, A. Oki
Publikováno v:
Proceedings GaAs Reliability Workshop, 2003..
Reliability investigation was performed on 0.25 pin AIGaN/GaN HEMTs grown by MOCVD on 2-inch SIC substrates. The devices were fabricated using Northrop Gruminan Space Technology’s (NGST) AlGaNlGaN HEMTs process technology. A temperature step stress
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f377b3e535f52ba268f2da2fd2fd7f4
https://doi.org/10.1109/gaasrw.2003.183772
https://doi.org/10.1109/gaasrw.2003.183772
Autor:
Ronald W. Grundbacher, R. Lai, M. Nishimoto, S. Din, M. Siddiqui, D. Streit, K. Johnson, G. Schreyer, D. Fordham, B. Pitman, L. Callejo
Publikováno v:
25th Annual Technical Digest 2003. IEEE Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003..
In this paper, we describe more extensive linearity measurements (OIP3, NPR, ACPR) of multistage compact MMIC power amplifiers for future phased array transmitters at MMW frequencies. As an example, extremely high 500 mW/mm P1dB with 24% PAE at P1dB
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5225b36eb1be8c73ccea2fd849a6e02d
https://doi.org/10.1109/gaas.2003.1252373
https://doi.org/10.1109/gaas.2003.1252373