Zobrazeno 1 - 10
of 253
pro vyhledávání: '"L, Callejo"'
Publikováno v:
Munibe Antropologia-Arkeologia, Vol 65, Pp 177-195 (2014)
En el presente artículo se presenta los resultados de la excavación del Sondeo 3 del yacimiento prerromano de Monte Ornedo (Valdeolea, Cantabria), una estructura cuya compartimentación y funcionalidad parecen relacionarla con una sauna.
Externí odkaz:
https://doaj.org/article/ea0fbf5f71624b66883a9f3ecd4080a5
Publikováno v:
Acta Crystallographica Section E, Vol 66, Iss 3, Pp m249-m250 (2010)
In the title compound, [Fe(C24H16N6)2][N(CN)2]2·4.5H2O, the central iron(II) ion is hexacoordinated by six N atoms of two tridentate 2,3,5,6-tetra-2-pyridylpyrazine (tppz) ligands. Two dicyanamide anions [dca or N(CN)2−] act as counter-ions, and 4
Externí odkaz:
https://doaj.org/article/c0811217229647ba9d9eccbe56903516
Autor:
Casella, Elisa1 (AUTHOR) elisa.casella@unive.it, Scicchitano, Giovanni2 (AUTHOR), Rovere, Alessio1,3 (AUTHOR)
Publikováno v:
Remote Sensing. Nov2024, Vol. 16 Issue 22, p4321. 26p.
Autor:
D. Leung, P. H. Liu, D. Eng, Mike Wojtowicz, Ioulia Smorchkova, Ronald W. Grundbacher, Y.C. Chou, Aaron K. Oki, L. Callejo, Q. Kan, R. Lai
Publikováno v:
Microelectronics Reliability. 44:1033-1038
Elevated temperature lifetesting was performed on 0.25 μm AlGaN/GaN HEMTs grown by MOCVD on 2-in. SiC substrates. A temperature step stress (starting at T a of 150 °C with a step of 15 °C; ending at T a of 240 °C; 48 h for each temperature cycle)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c0906ee1be9e310f2ece6798d96427b
https://doi.org/10.1016/j.microrel.2004.03.008
https://doi.org/10.1016/j.microrel.2004.03.008
Autor:
P.M. Gordón Ramos, J. Rosique Gracia, E. Rebato Ochoa, María Dolores Marrodán Serrano, L. Callejo Gea, M. González-Montero de Espinosa, E. Moreno Heras
Publikováno v:
Anales de Pediatría, Vol 54, Iss 5, Pp 468-476 (2001)
Objetivos: Describir el crecimiento estatural de una muestra de niños y jóvenes de ambos sexos mediante el modelo 1 de Preece-Baines (PB1) para obtener valores percentilares suavizados que sirvan de referencia. Asimismo, aplicar elPB1 a una serie d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dce4e0e14c48d752553fc2943a478eef
https://doi.org/10.1016/s1695-4033(01)77570-4
https://doi.org/10.1016/s1695-4033(01)77570-4
Autor:
Pergel, Enikő1 (AUTHOR) pergel.eniko@semmelweis.hu, Tóth, Dániel J.1,2 (AUTHOR) baukal.dora@semmelweis.hu, Baukál, Dóra1 (AUTHOR) veres.iren@semmelweis.hu, Veres, Irén1 (AUTHOR), Czirják, Gábor1 (AUTHOR) czirjak.gabor@semmelweis.hu
Publikováno v:
International Journal of Molecular Sciences. Aug2024, Vol. 25 Issue 16, p8879. 18p.
Publikováno v:
Acta Crystallographica Section E: Structure Reports
In the title compound, [Fe(C(24)H(16)N(6))(2)][N(CN)(2)](2)·4.5H(2)O, the central iron(II) ion is hexa-coordinated by six N atoms of two tridentate 2,3,5,6-tetra-2-pyridylpyrazine (tppz) ligands. Two dicyanamide anions [dca or N(CN)(2) (-)] act as c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::13332fea7b9435157de2c4f9e1fc6d87
https://pubmed.ncbi.nlm.nih.gov/21580205
https://pubmed.ncbi.nlm.nih.gov/21580205
Autor:
Q. Kan, L. Callejo, Y.C. Chou, D. Eng, D. Leung, Ronald W. Grundbacher, T. Block, A.K. Oki, M. Yu, Guann-Pyng Li, Richard Lai
Publikováno v:
2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual..
The effects of hot carrier stress testing on 0.15 /spl mu/m GaAs PHEMT MMIC power amplifiers under RF-drive at room temperature were investigated. The results show that output power degradation is induced by gate current generated from impact ionizat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::407827ebdfbb6ec3806930eb77002bfe
https://doi.org/10.1109/relphy.2005.1493157
https://doi.org/10.1109/relphy.2005.1493157
Autor:
Y.C. Chou, D. Eng, K. Kiyono, Q. Kan, M. Yu, A.K. Oki, D. Leung, Richard Lai, L. Callejo, B. Yamane, Ronald W. Grundbacher, D. Okazaki
Publikováno v:
2004 IEEE International Reliability Physics Symposium. Proceedings.
The degradation mechanism of 0.15 /spl mu/m GaAs PHEMTs subjected to three-temperature elevated lifetest (T/sub 1/=185/spl deg/C, T/sub 2/=200/spl deg/C, and T/sub 3/=215/spl deg/C ambient temperatures in N/sub 2/ atmosphere and stressed at Vds=5V/Id
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d5dbf9c6ed145b348f1441f7555f96d2
https://doi.org/10.1109/relphy.2004.1315372
https://doi.org/10.1109/relphy.2004.1315372
Autor:
R. Grundbacher, D. Eng, R. Lal, Q. Kan, L. Callejo, B. Allen, K. Lee, T. Block, M. Bledenbander, A. Okl, Y.C. Chou, D. Leung
Publikováno v:
JEDEC (formerly the GaAs REL Workshop) ROCS Workshop, 2004..
The dual gate layout configuration has become a versatile approach for compact and high performance MMIC design for commercial, and military/space applications. In this paper, we describe a method that was developed to lifetest compact (0.81 mm/sup 2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::346c4175332701f5d87a0e8c22997a8a
https://doi.org/10.1109/rocs.2004.184348
https://doi.org/10.1109/rocs.2004.184348