Wet sulfur passivation of GaSb(1 0 0) surface for optoelectronic applications

Autor: Kunitsyna, E.V., L’vova, T.V., Dunaevskii, M.S., Terent’ev, Ya.V., Semenov, A.N., Solov’ev, V.A., Meltser, B.Ya., Ivanov, S.V., Yakovlev, Yu.P.

Publikováno v: In Applied Surface Science 2010 256(18):5644-5649

Molecular-beam epitaxy of ZnSe-based heterostructures on Na 2S-passivated GaAs substrates

Autor: L'vova, T.V. ^*, Sedova, I.V., Ulin, V.P., Sorokin, S.V., Solov'ev, V.A., Sitnikova, A.A., Berkovits, V.L., Ivanov, S.V.

Publikováno v: In Vacuum 2000 57(2):163-169

Using sulfide treatment to improve performance of GaSb/GaInAsSb/GaAlAsSb photodiode heterostructures for spectral range, of 1.7-2.5 /spl mu/m.

Autor: Andreev, I.A., L'vova, T.V., Mikhailova, M.P., Kunitsyna, E.V., Soldv'ev, V.A., Yakovlev, Yu.P.

Publikováno v: ASDAM '98 Conference Proceedings Second International Conference on Advanced Semiconductor Devices & Microsystems (Cat No98EX172); 1998, p155-158, 4p

Liquid-phase epitaxial growth of GaSb-related compounds on sulphide treated (100) GaSb substrates.

Autor: L'vova, T.V., Andreev, I.A., Kunitsyna, E.V., Mikhailova, M.P., Ulin, V.P., Yakovlev, Y.P.

Publikováno v: IEE Proceedings -- Optoelectronics; Oct1998, Vol. 145 Issue 5, p303-306, 4p

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