Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Kyungwook Lee"'
Publikováno v:
Scientific Reports, Vol 13, Iss 1, Pp 1-10 (2023)
Abstract Navigation in terrains mixture of rigid support and granular media is associated with slippage. It is important to find the optimal path because slippage implies the possibility of a mobile robot being stuck in the sand. This research introd
Externí odkaz:
https://doaj.org/article/f6e49c212e1648c59c396f556f3c2f50
Autor:
Hongjoon Kyong, Myeongjin Choi, Yecheol Moon, Kyungwook Lee, Jongwon Kim, Taegyun Kim, Taewon Seo
Publikováno v:
IEEE Access, Vol 9, Pp 143392-143405 (2021)
This study aimed to optimize the rope winch of a façade-cleaning robot, a system that travels vertically using the friction between ropes and pulleys. However, position errors can be caused by various factors during locomotion. This adversely affect
Externí odkaz:
https://doaj.org/article/c0ff795f22ca44b7bc181a5391a43e40
Publikováno v:
IEEE/ASME Transactions on Mechatronics. :1-8
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b57e0c5483a5159c8b7be759016b1260
https://doi.org/10.1109/tmech.2023.3273240
https://doi.org/10.1109/tmech.2023.3273240
Publikováno v:
International Journal of Precision Engineering and Manufacturing. 23:1163-1171
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de7c9ee6d30be1d2a959e60ad0e4cbb2
https://doi.org/10.1007/s12541-022-00693-4
https://doi.org/10.1007/s12541-022-00693-4
Publikováno v:
IEEE Robotics and Automation Letters. 7:1620-1626
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e45ade16cae5930fe07ad6703710b3c
https://doi.org/10.1109/lra.2022.3141204
https://doi.org/10.1109/lra.2022.3141204
Autor:
TaeWon Seo, Taegyun Kim, Myeongjin Choi, Hongjoon Kyong, Kyungwook Lee, JongWon Kim, Yecheol Moon
Publikováno v:
IEEE Access. 9:143392-143405
This study aimed to optimize the rope winch of a facade-cleaning robot, a system that travels vertically using the friction between ropes and pulleys. However, position errors can be caused by various factors during locomotion. This adversely affects
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c869fb026977f7a1575cab149ab9344b
https://doi.org/10.1109/access.2021.3121411
https://doi.org/10.1109/access.2021.3121411
Publikováno v:
Journal of the Korean Society of Propulsion Engineers. 22:152-159
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6198e0d6fabe59c8a9059831b77fce0c
https://doi.org/10.6108/kspe.2018.22.2.152
https://doi.org/10.6108/kspe.2018.22.2.152
Publikováno v:
Aerospace Science and Technology. 68:362-369
Numerical simulations of a hot gas valve were conducted in this study to establish an analysis method. The far-field effect was also checked to select a computational domain. The existence of the far-field did not affect flow and temperature characte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f88d7c0f8642c6b4015eff02b9a3e16
https://doi.org/10.1016/j.ast.2017.05.026
https://doi.org/10.1016/j.ast.2017.05.026
Publikováno v:
1995 IEEE International SOI Conference Proceedings.
The BOnded Silicon On Insulator (BOSOI) has been considered as a promising substitute for bulk silicon technology because of its structural flexibility. However,there are considerable drawbacks if epitaxial etch stopping or localized plasma etching t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d7552788eed06d69e8974abef26b0d3a
https://doi.org/10.1109/soi.1995.526460
https://doi.org/10.1109/soi.1995.526460
Autor:
Ju-Tae Moon, Kyungwook Lee, Nae-In Lee, Ho-Kyu Kang, Geum-Jong Bae, Tae-Hee Choe, K. Fujihara, Hwa-Sung Rhee, Sang-Su Kim
Publikováno v:
2000 IEEE International SOI Conference. Proceedings (Cat. No.00CH37125).
Fully-depleted silicon-on-insulator (FDSOI) MOSFETs are very attractive for low-voltage applications due to ideal subthreshold slope, short channel effect (SCE) immunity and reduced junction capacitance compared to bulk silicon MOSFETs. However, the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::588f087e5e8c851c956c7a71919d3ed1
https://doi.org/10.1109/soi.2000.892776
https://doi.org/10.1109/soi.2000.892776