Výsledky vyhledávání - "Kyunghan, Ahn"

Akademický článek

Dopant Control of Solution‐Processed CuI:S for Highly Conductive p‐Type Transparent Electrode

Autor: Minki Son, Ga Hye Kim, Okin Song, ChanHu Park, Sunbum Kwon, Joohoon Kang, Kyunghan Ahn, Myung‐Gil Kim

Publikováno v: Advanced Science, Vol 11, Iss 14, Pp n/a-n/a (2024)

Abstract Copper iodide (CuI) has garnered considerable attention as a promising alternative to p‐type transparent conducting oxides owing to its low cation vacancy formation energy, shallow acceptor level, and readily modifiable conductivity via do

Externí odkaz: https://doaj.org/article/ee3a25555e1a41ffbb4d12e295b9000e

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Akademický článek

Multiscale structural control of thiostannate chalcogels with two-dimensional crystalline constituents

Autor: Thanh Duy Cam Ha, Heehyeon Lee, Yeo Kyung Kang, Kyunghan Ahn, Hyeong Min Jin, In Chung, Byungman Kang, Youngtak Oh, Myung-Gil Kim

Publikováno v: Nature Communications, Vol 13, Iss 1, Pp 1-13 (2022)

Abstract Chalcogenide aerogels (chalcogels) are amorphous structures widely known for their lack of localized structural control. This study, however, demonstrates a precise multiscale structural control through a thiostannate motif ([Sn2S6]4−)-tra

Externí odkaz: https://doaj.org/article/411af107f8a4493b8c774b036823f239

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Akademický článek

Anion‐Vacancy‐Defect Passivation of a 2D‐Layered Tin‐Based Perovskite Thin‐Film Transistor with Sulfur Doping

Autor: Jae‐Hyeok Cho, Ji‐Young Go, Tan Tan Bui, Seunguk Mun, Yunseok Kim, Kyunghan Ahn, Yong‐Young Noh, Myung‐Gil Kim

Publikováno v: Advanced Electronic Materials, Vol 9, Iss 3, Pp n/a-n/a (2023)

Abstract Metal halide perovskites have attracted a considerable amount of research attention with significant progress made in the field of optoelectronics. Despite their outstanding electrical characteristics, structural defects impede their potenti

Externí odkaz: https://doaj.org/article/6e4269ce3bbf48f2866b97c974225b0f

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Akademický článek

Entropy stabilized off-stoichiometric cubic γ-Cu1−xIx phase containing high-density Cu vacancies

Autor: Kyunghan Ahn, Myung-Gil Kim, Sungjin Park, Byungki Ryu

Publikováno v: AIP Advances, Vol 11, Iss 9, Pp 095018-095018-7 (2021)

Copper iodide (CuI) has gained attention as a highly conductive p-type transparent material. Here, we investigate the phase stability of I-rich cubic CuI phases with Cu-vacancy defects by performing hybrid-density functional theory calculations. In t

Externí odkaz: https://doaj.org/article/de33de1059bd44b6b901de3851eb17c3

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