Zobrazeno 1 - 9 of 9 pro vyhledávání: '"Kyungbae Lee"'
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GaN Epitaxial Layer Grown with Conductive AlxGa1−xN Buffer Layer on SiC Substrate Using Metal Organic Chemical Vapor Deposition
Autor: Byeongchan So, Kyungbae Lee, Kyungjae Lee, Cheon Heo, Jaedo Pyeon, Kwangse Ko, Jongjin Jang, Okhyun Nam
Publikováno v: Journal of Nanoscience and Nanotechnology. 16:4914-4918
This study investigated GaN epitaxial layer growth with a conductive Al(x)Ga(1-x)N buffer layer on n-type 4H-SiC by high-temperature metalorganic chemical vapor deposition (HT-MOCVD). The Al composition of the Al(x)Ga(1-x)N buffer was varied from 0%
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::fd2c8980ab0a62e319c3b034578392e7
https://doi.org/10.1166/jnn.2016.12256
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3
Correlation Between Two-Dimensional Electron Gas Mobility and Crystal Quality in AlGaN/GaN High-Electron-Mobility Transistor Structure Grown on 4H-SiC
Autor: Cheon Heo, Jongjin Jang, Kwangse Ko, Okhyun Nam, Kyungbae Lee, Byungchan So, Kyungjae Lee
Publikováno v: Journal of nanoscience and nanotechnology. 17(1)
We investigated the correlation between the crystal quality and two-dimensional electron gas (2DEG) mobility of an AlGaN/GaN high-electron-mobility transistor (HEMT) structure grown by metal-organic chemical vapor deposition. For the structure with a
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::eac21f5d17bf54f37931123515549b21
https://pubmed.ncbi.nlm.nih.gov/29630184
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6
GaN Epitaxial Layer Grown with Conductive Al(x)Ga(1-x)N Buffer Layer on SiC Substrate Using Metal Organic Chemical Vapor Deposition
Autor: Byeongchan, So, Kyungbae, Lee, Kyungjae, Lee, Cheon, Heo, Jaedo, Pyeon, Kwangse, Ko, Jongjin, Jang, Okhyun, Nam
Publikováno v: Journal of nanoscience and nanotechnology. 16(5)
This study investigated GaN epitaxial layer growth with a conductive Al(x)Ga(1-x)N buffer layer on n-type 4H-SiC by high-temperature metalorganic chemical vapor deposition (HT-MOCVD). The Al composition of the Al(x)Ga(1-x)N buffer was varied from 0%
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=pmid________::df3e5bb304de643fbb35a28643d0c7ed
https://pubmed.ncbi.nlm.nih.gov/27483845
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7
Overloading Control Effectiveness of Overweight Enforcement System using High-Speed Weigh-In-Motion
Autor: Soon-Min Kwon, Kyungbae Lee, Young-Yoon Jung
Publikováno v: Journal of the Korean Society of Road Engineers. 14:179-188
PURPOSES: The aim of this study is to analyze overloading control effectiveness of enforcing overweighted vehicles using HS-WIM (High-Speed Weigh-in-Motion) at main lane of expressway. METHODS: To analyze the weight distribution statistically, HS-WIM
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::62d14d4c00b9bb9e9371149b40d0fc65
https://doi.org/10.7855/ijhe.2012.14.5.179
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8
Mg-compensation effect in GaN buffer layer for AlGaN/GaN high-electron-mobility transistors grown on 4H-SiC substrate
Autor: Kwangse Ko, Sang-Woo Han, Okhyun Nam, Byeongchan So, Cheon Heo, Kyeongjae Lee, Kyungbae Lee, Taemyung Kwak, Ho-Young Cha
Publikováno v: Japanese Journal of Applied Physics. 56:015502
The present study investigated the Mg doping effect in the gallium nitride (GaN) buffer layers (BLs) of AlGaN/GaN high-electron-mobility transistor (HEMT) structures grown on semi-insulating 4H-SiC substrates by metal organic chemical vapor depositio
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f995734f8cc5243e4c7200709569d00c
https://doi.org/10.7567/jjap.56.015502
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