Zobrazeno 1 - 10
of 40
pro vyhledávání: '"KyungSeok Oh"'
Autor:
Kyungseok Oh, Junho Kim
Publikováno v:
Machines, Vol 12, Iss 9, p 633 (2024)
Cavitation phenomena in pumps are major determinants of the lifespan of both the impeller and the pump itself, causing significant vibration and noise, which are critical concerns for pump designers. This study focuses on the influence of various geo
Externí odkaz:
https://doaj.org/article/95cf21fb26a84f5db3d84869cb114383
Publikováno v:
Journal of Korea Robotics Society. 16:336-344
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a420c548ebca760194f34e2d6f08098c
https://doi.org/10.7746/jkros.2021.16.4.336
https://doi.org/10.7746/jkros.2021.16.4.336
Autor:
Hong-Woo Lee, Do-Nyun Kim, Yeon-Sik Kang, Sungsoo Park, Kyungseok Oh, Jaehyun Kim, Dong-Yoon Seok
Publikováno v:
Journal of Materials Processing Technology. 289:116929
The yield-point phenomenon (YPP) is generally eliminated or reduced in aged sheet metals to avoid defects during metal forming applications; however, it may be beneficial in specific applications and could be induced to enhance certain properties. Fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0de4fadb51ed6a4258f0e3655c1c7447
https://doi.org/10.1016/j.jmatprotec.2020.116929
https://doi.org/10.1016/j.jmatprotec.2020.116929
Autor:
Kyungseok Oh, Seon Yoon Jung, Kyeonghui Kim, Sang Hyeon Jin, Jinung An, Sanghyun Won, Gi Hyun Lee, Janghwan Jekal, Inhwa Han, Seung Tae Yang, Yungeui Kang
Publikováno v:
2018 6th International Conference on Brain-Computer Interface (BCI).
Until recently, pain assessment has largely relied on subjective self-reports such as questionnaires or VAS. This paper attempts to objectively quantify pain from a neurological point of view through the characteristics of cerebral hemodynamics. Func
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::095ca7ba6b3175ec92158b00d389c6b2
https://doi.org/10.1109/iww-bci.2018.8311511
https://doi.org/10.1109/iww-bci.2018.8311511
Autor:
Kyungseok Oh
Publikováno v:
Seoul Tax Law Review. 21:409-439
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::98778ea8a38de8825259c947369f5b55
https://doi.org/10.16974/stlr.2015.21.2.011
https://doi.org/10.16974/stlr.2015.21.2.011
Autor:
Yong-Han Roh, Seung-Heon Lee, Kyungseok Oh, Jung-Chan Lee, Jun-Hee Lee, Mun-jun Kim, Seok-Woo Nam, Seung-jae Lee, Mansug Kang
Publikováno v:
ECS Transactions. 33:53-58
We studied the misalignment between active and gate layer in terms of silicon dislocation caused by high temperature anneal process in SOG based STI gap-fill process. The SOG process is one of good candidates to overcome gap-fill limitation due to it
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e09496e4e4e7ec2d55702a7ecf72e433
https://doi.org/10.1149/1.3567403
https://doi.org/10.1149/1.3567403
Autor:
Hui-jung Kim, Hyun-Gi Kim, Young-Hyun Jun, Gyo-Young Jin, Donggun Park, Jin-Young Kim, Jae-Man Yoon, Sua Kim, Ki-whan Song, Jei-Hwan Yoo, Hyun-Chul Kang, Chang-Hyun Kim, Duk-ha Park, Hwan-Wook Park, Kang-Uk Kim, Yeong-Taek Lee, Woo-Seop Kim, Nam-Kyun Tak, Kyungseok Oh, Yong Chul Oh, Hyun-Woo Chung
Publikováno v:
IEEE Journal of Solid-State Circuits. 45:880-888
A functional 4F2 DRAM was implemented based on the technology combination of stack capacitor and surrounding-gate vertical channel access transistor (VCAT). A high performance VCAT has been developed showing excellent Ion-Ioff characteristics with mo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3787a1b86ee135b11b8596eb33058671
https://doi.org/10.1109/jssc.2010.2040229
https://doi.org/10.1109/jssc.2010.2040229
Autor:
Hyeongsun Hong, Don Park, Chang-Suk Hyun, Kyungseok Oh, Seong-Goo Kim, Tai-heui Cho, Jong-Gyu Suk, Kang-yoon Lee
Publikováno v:
Solid-State Electronics. 50:1030-1034
Fully integrated 512 Mb DRAMs with hemispherical grain (HSG) merged Al2O3/HfO2 (AHO) cylinder capacitor were successfully developed for the first time. Highly manufacturable reverse HSG one cylinder storage node (RHOCS) technique and AHO capacitor pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce81a95dc32aa0baafa87ce4374154f4
https://doi.org/10.1016/j.sse.2006.05.006
https://doi.org/10.1016/j.sse.2006.05.006
Autor:
Soo-Young Park, Young Gyu Kim, Barry L. Farmer, Seung-Yeop Kwak, Jong-Chan Lee, Kyungseok Oh, Jae Young Jho, Hee Bong Lee
Publikováno v:
Macromolecular Rapid Communications. 22:815-819
[(6-Heptylsulfonyl)hexylthio]methyl-substituted poly(oxyethylene) bearing a very polar sulfone group in the middle of the alkyl side chain was success fully synthesized by the reaction of poly[oxy(chloromethyl)ethylene] and (6-heptylsulfonyl)hexyl th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ecd45357013cc391cc31075c0bb5323c
https://doi.org/10.1002/1521-3927(20010701)22:11<815::aid-marc815>3.0.co
https://doi.org/10.1002/1521-3927(20010701)22:11<815::aid-marc815>3.0.co
Autor:
Mi-Jo Kim, Jung-Bae Lee, Jae-Youn Youn, Joon-Young Park, Sang-Hoon Jung, Sung-Min Yim, Seung Bum Ko, Hyo-Chang Kim, Joo Sun Choi, Jeong Yong-Gwon, Hyunyoon Cho, Sang Jae Rhee, Kyungseok Oh, Dae-Sik Yim, Yong-Cheol Bae, Young Hoon Son, Yong-Gyu Chu, Hye-In Choi, Kwang-Sook Noh
Publikováno v:
ISSCC
Mobile DRAM is widely adopted in battery-powered portable devices because of its low power. Recently, in mobile devices such as smart phones and tablet PCs, higher performance is required to support 3D gaming mode and high-quality video. These trends
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cd906ab662d2ee159bdc167cf1674cfd
https://doi.org/10.1109/isscc.2012.6176871
https://doi.org/10.1109/isscc.2012.6176871