Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Kyung-youl Min"'
Autor:
Choul-Ho Lim, Kyung-youl Min, Yil-Wook Kim, Kwang-Jun Cho, Soun-Young Lee, Sung Heo, Ho-Joung Kim, Yoon-Baek Park, Tae-Kwon Lee, Moon-Keun Ichon Lee
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 19:916-921
The SrBi2Ta2O9 (SBT) films studied for this report were prepared by metalorganic decomposition. The SBT thin film, which belongs to a Bi-layered perovskite structure where double Ta–O octahedron layers are sandwiched between (Bi2O2)2+ layers, was a
Publikováno v:
SHINKU. 40:313-316
Autor:
Kyung-youl Min, Ryuichi Shimizu
Publikováno v:
Surface Science. 341:241-248
To understand the basic processes of altered layer formation in subsurface regions of an alloy, we studied the dynamic change of the composition profile in the altered layer by Monte Carlo simulation. The simulation was performed for Cu52Pt alloy und
Publikováno v:
Journal of the Japan Welding Society. 64:277-281
Autor:
Kyung-youl Min, Dae Won Moon, Hyo Sik Chang, Sangmu Choi, Hyunsang Hwang, Hyung-Ik Lee, Hyundoek Yang
Publikováno v:
Applied Physics Letters. 80:386-388
The electrical and structural characteristics of an ultrathin gate dielectric, thermally grown on 4° tilted wafer has been investigated. Compared with a control wafer, a relaxation of the Si lattice strain at the SiO2/Si(001) interface was observed
Autor:
Kyung-Youl Min, John Garcia, Christophe Suzor, Victor V. Boksha, Mitch Heins, Rafik Marutyan, Anthony Adamov, John Gookassian, Sergei Bakarian, Gurgen Lachinyan, Hitendra Divecha, Bob Pack, Dean Frazier, Brian Gordon, Dan White, Brian Dillon
Publikováno v:
Design and Process Integration for Microelectronic Manufacturing III.
There is a growing realization of the need for highly integrated solutions enabled by new bi-directional data 'pipes' between design and manufacturing. Traditional EDA applications should be able to communicate and collaborate with yield analysis sof
Autor:
Riichirou Mitsuhashi, Yoshihiro Irokawa, Suchan Lee, Yoshihide Kimura, Kyung-youl Min, Ryuichi Shimizu, Masahiko Inoue
Publikováno v:
Japanese Journal of Applied Physics. 35:4042
The surface structure of Zr–O/W(100) at 1700 K was studied by reflection high-energy electron diffraction and ion scattering spectroscopy. It has been revealed that Zr atoms align themselves to form p(1×1) structure in the topmost atomic layer of
Autor:
Ryuichi Shimizu, Siegfried Hohmann, Yosuke Suzuki, Masahiko Inoue, Riichirou Mitsuhashi, Kyung–youl Min
Publikováno v:
Japanese Journal of Applied Physics. 35:221
We have developed an ultrahigh-vacuum (UHV) apparatus which enables reflection high-energy electron diffraction (RHEED), sputtering yield measurement and ion scattering spectroscopy (ISS) to be performed simultaneously, leading to a more comprehensiv
Publikováno v:
Japanese Journal of Applied Physics. 33:6675
The `over-cosine' distribution peculiar to the angular distribution of Pt atoms sputtered from pure Pt and Cu-Pt (19 at.%) alloy targets has been studied experimentally and theoretically. The angular distributions were measured for pure Cu, Pt and Cu
Publikováno v:
Japanese Journal of Applied Physics. 33:3566
A (100)-oriented TiN film was successfully prepared by means of the post irradiation of the 5 keV N2 + ion beam onto the predeposited titanium film ∼500 Å thick on a Si(001) substrate at room temperature. The crystal growth of TiN film was monitor