Zobrazeno 1 - 10
of 32
pro vyhledávání: '"Kyung-Mun Kang"'
Autor:
Kyung-Mun Kang, Chan Lee, Minjae Kim, Haryeong Choi, Dong-eun Kim, Seung-Rok Kim, Jin-Woo Park, Hyung-Ho Park
Publikováno v:
Journal of Alloys and Compounds. 925:166694
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c7b234ed86d8693c7b05f07e56b3129
https://doi.org/10.1016/j.jallcom.2022.166694
https://doi.org/10.1016/j.jallcom.2022.166694
Autor:
Hong Sub Lee, Rainer Waser, Dirk J. Wouters, Kyung Mun Kang, Yue Wang, Regina Dittmann, Minjae Kim, Jianhua Yang, Hyung Ho Park
Publikováno v:
Materials Today. 28:63-80
Resistance random-access memory (RRAM) is a promising candidate for both the next-generation non-volatile memory and the key element of neural networks. In this article, different types of Mott-transition (the transition between the Mott insulator an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab26468f5e972dcffc6334df661da198
https://doi.org/10.1016/j.mattod.2019.06.006
https://doi.org/10.1016/j.mattod.2019.06.006
Publikováno v:
Journal of the Korean Ceramic Society. 56:302-307
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cdc7a9775c9a8b970f6a0e644bd68f81
https://doi.org/10.4191/kcers.2019.56.3.11
https://doi.org/10.4191/kcers.2019.56.3.11
Autor:
Yue Wang, Malik Abdul Rehman, Seong Chan Jun, Seung-Hyun Chun, Minjae Kim, Kyung Mun Kang, Sanjib Baran Roy, Hong Sub Lee, Chabungbam Akendra Singh, Hyung Ho Park, Se-Won Park
Publikováno v:
Applied Materials Today. 26:101267
Over the past decade, graphene-based solar cells have received increasing exploration. In particular, the metal–insulator–semiconductor (MIS)-type solar cells have an inherent cost advantage compared to the p-n junction solar cells. However, the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8a902fdf60156e550a13cb07ee91bf4
https://doi.org/10.1016/j.apmt.2021.101267
https://doi.org/10.1016/j.apmt.2021.101267
Publikováno v:
Thin Solid Films. 660:913-919
Zinc oxide (ZnO) thin films with co-doped Ga and F were deposited using atomic layer deposition. Structural, electrical, and optical properties of the ZnO thin films were analyzed for different F doping amounts under the condition that the Ga doping
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b30a8675fdb9786cd0d322bec4c5867
https://doi.org/10.1016/j.tsf.2018.02.030
https://doi.org/10.1016/j.tsf.2018.02.030
Publikováno v:
Thin Solid Films. 660:852-858
Owing to oxygen vacancies, the as-prepared ZnO normally shows n-type semiconducting characteristic. This has restricted the preparation of high-quality p-type ZnO and the application of ZnO optoelectronic devices. Therefore, we studied a method of us
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5760b47ea7b4505a4a5e8e8f6d37e190
https://doi.org/10.1016/j.tsf.2018.03.003
https://doi.org/10.1016/j.tsf.2018.03.003
Publikováno v:
Thin Solid Films. 660:657-662
The present study focused on nitrogen doped Al2O3 thin films using atomic layer deposition, varying the deposition temperature from 55 to 170 °C. Al2O3 thin film growth rate and electrical properties were mostly dependent on deposition temperature.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ae3b51136e16242aacaf79f429d985e
https://doi.org/10.1016/j.tsf.2018.04.021
https://doi.org/10.1016/j.tsf.2018.04.021
Autor:
Hyung Ho Park, Kyung Mun Kang
Publikováno v:
The Journal of Physical Chemistry C. 122:377-385
The deposition temperature has a significant effect on the growth and physicochemical properties of ZnO thin films. However, changes within a low temperature range have not yet been fully investigated. In this study, ZnO and fluorine-doped (F-doped)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::29bdbe92a502df9b3896244e6a3ced15
https://doi.org/10.1021/acs.jpcc.7b08943
https://doi.org/10.1021/acs.jpcc.7b08943
Publikováno v:
Materials Science and Engineering: B. 273:115401
Si-doped zinc oxide (ZnO) thin films were fabricated via atomic layer deposition (ALD) using diethylzinc, Tris(dimethylamino)silane, and H2O as Zn, Si, and O sources, respectively. The ALD cycle of the (Zn-O) step and the (Zn-Si-O) step were separate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9335b4dbceeb2513434cd6cb0d819e77
https://doi.org/10.1016/j.mseb.2021.115401
https://doi.org/10.1016/j.mseb.2021.115401
Publikováno v:
Applied Surface Science. 535:147734
Aluminum/fluorine-codoped zinc oxide (AFZO) thin films were prepared on silicon and glass substrates through atomic layer deposition at 150 °C. Their structural, electrical, and optical properties were investigated as functions of the F/Al codoping
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3505cdc8e5a0d1f3a6b88a09a31e6750
https://doi.org/10.1016/j.apsusc.2020.147734
https://doi.org/10.1016/j.apsusc.2020.147734