Výsledky vyhledávání - "Kyung-Kyu Min"

Akademický článek

A Systematic Compact Model Parameter Calibration with Adaptive Pattern Search Algorithm

Autor: Jeesoo Chang, Sungmin Hwang, Kyungchul Park, Taejin Jang, Kyung-Kyu Min, Min-Hye Oh, Jonghyuk Park, Jong-Ho Lee, Byung-Gook Park

Publikováno v: Applied Sciences, Vol 11, Iss 9, p 4155 (2021)

A systematic device-model calibration (extraction) methodology has been proposed to reduce parameter calibration time of advanced compact model for modern nano-scale semiconductor devices. The adaptive pattern search algorithm is a variant of the dir

Externí odkaz: https://doaj.org/article/56135bb689c94aca879651a366f3b023

Zobrazit plný text záznamu

Akademický článek

Effect of Al Concentration on Ferroelectric Properties in HfAlOx‐Based Ferroelectric Tunnel Junction Devices for Neuroinspired Applications

Autor: Jihyung Kim, Dahye Kim, Kyung Kyu Min, Matthias Kraatz, Taeyoung Han, Sungjun Kim

Publikováno v: Advanced Intelligent Systems, Vol 5, Iss 8, Pp n/a-n/a (2023)

Since HfOx‐based ferroelectric tunnel junctions (FTJs) are attractive compared to perovskite‐based FTJs and other emerging memory devices, they are being actively studied recently. They have advantages such as a simple metal–insulator–metal s

Externí odkaz: https://doaj.org/article/0fe514f84f9b49379b2d75b5d5dfaea1

Zobrazit plný text záznamu

Akademický článek

1/f Noise in Synaptic Ferroelectric Tunnel Junction: Impact on Convolutional Neural Network

Autor: Wonjun Shin, Kyung Kyu Min, Jong-Ho Bae, Jaehyeon Kim, Ryun-Han Koo, Dongseok Kwon, Jae-Joon Kim, Daewoong Kwon, Jong-Ho Lee

Publikováno v: Advanced Intelligent Systems, Vol 5, Iss 6, Pp n/a-n/a (2023)

In recent years, neuromorphic computing has been rapidly developed to overcome the limitations of von Neumann architecture. In this regard, the demand for high‐performance synaptic devices with high switching speeds, low power consumption, and mult

Externí odkaz: https://doaj.org/article/4ebaf4af7e35419b8bbb538cb20c6e7d

Zobrazit plný text záznamu

Akademický článek

Highly Sensitive Ultraviolet Photodetector Based on an AlGaN/GaN HEMT with Graphene‐On‐p‐GaN Mesa Structure

Autor: Bhishma Pandit, Hyeon‐Sik Jang, Yunjo Jeong, Sangmin An, S. Chandramohan, Kyung Kyu Min, Sang Min Won, Chel‐Jong Choi, Jaehee Cho, Seongin Hong, Keun Heo

Publikováno v: Advanced Materials Interfaces, Vol 10, Iss 12, Pp n/a-n/a (2023)

Abstract The advantageous role of 2D electron gas presence at the AlGaN/GaN interface attracts huge interest in the field of GaN‐based ultraviolet photodetector technology. However, the presence of high dark current deteriorates the photodetector p

Externí odkaz: https://doaj.org/article/7e01a6635329401b89a9f394406192bf

Zobrazit plný text záznamu

Vyhledávací nástroje:

Upřesnit hledání