Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Kyung-Jun Ahn"'
Autor:
Kyung Jun Ahn, Jieun Lee, Ju Yeoul Baek, Seong Jun Kang, Sung Min Jo, Byung Doo Chin, Jae Gyeong Kim, Han-Ki Kim
Publikováno v:
Scientific Reports, Vol 8, Iss 1, Pp 1-13 (2018)
We fabricated W-doped In2O3 (IWO) films at room temperature on a flexible PET substrate using an in-line arc plasma ion plating system for application as flexible transparent conducting electrodes (FTCEs) in flexible organic light emitting diodes (OL
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5cbb1dd8ae9d3472d0ab4f5d1c4df4c8
http://link.springer.com/article/10.1038/s41598-018-30548-w
http://link.springer.com/article/10.1038/s41598-018-30548-w
Autor:
Han-Ki Kim, Jae Ho Kim, Tae Yeon Seong, Hyeong Jin Seo, Kyung Jun Ahn, Kwun-Bum Chung, Hae Jun Seok
Publikováno v:
Applied Surface Science. 440:1211-1218
We report the characteristics of Sn-doped In2O3 (ITO) films intended for use as transparent conducting electrodes; the films were prepared via a five-generation, in-line type, cylindrical, rotating magnetron sputtering (CRMS) system as a function of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c310b0d747d45b357c38d0b99c3b3e8
https://doi.org/10.1016/j.apsusc.2018.01.318
https://doi.org/10.1016/j.apsusc.2018.01.318
Autor:
Sang Hyuk Lim, Jin Hyuck Heo, Kyung Jun Ahn, Tae Yeon Seong, Jae Ho Kim, Hyeong Jin Seo, Hae Jun Seok, Han-Ki Kim
Publikováno v:
Nanoscale. 10:20587-20598
We report high performance flexible Sn-doped In2O3 (ITO) films prepared by in-line type vertical plasma arc ion plating for high performance flexible perovskite solar cells. Even at room temperature deposition, the ion-plated ITO film showed a low sh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::245465c24f6f24e22efadf8eb3955e50
https://doi.org/10.1039/c8nr06586a
https://doi.org/10.1039/c8nr06586a
Publikováno v:
Korean Journal of Materials Research. 27:69-75
To establish low-temperature process conditions, process-property correlation has been investigated for Ga-doped ZnO (GZO) thin films deposited by pulsed DC magnetron sputtering. Thickness of GZO films and deposition temperature were varied from 50 t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a4fe2cb438a6cd28c032de9c3fc2e6a
https://doi.org/10.3740/mrsk.2017.27.2.69
https://doi.org/10.3740/mrsk.2017.27.2.69
Publikováno v:
Journal of Nanoscience and Nanotechnology. 16:4856-4859
Cu(In, Ga)S2 (CIGS) absorbers were prepared using two-step process. Cu-In-Ga precursors were deposited by sputtering method and then were sulfurized by rapid thermal process based on H2S gas. Sulfurization temperature was changed from 470 degrees C t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::06d54e235ac640a67adcd7d8bc12ecc7
https://doi.org/10.1166/jnn.2016.12193
https://doi.org/10.1166/jnn.2016.12193
Autor:
Jae-Gyeong, Kim, Ji-Eun, Lee, Sung Min, Jo, Byung Doo, Chin, Ju-Yeoul, Baek, Kyung-Jun, Ahn, Seong Jun, Kang, Han-Ki, Kim
Publikováno v:
Scientific Reports
We fabricated W-doped In2O3 (IWO) films at room temperature on a flexible PET substrate using an in-line arc plasma ion plating system for application as flexible transparent conducting electrodes (FTCEs) in flexible organic light emitting diodes (OL
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::690fae83526c93fb1d58ff479c1d8919
https://pubmed.ncbi.nlm.nih.gov/30104703
https://pubmed.ncbi.nlm.nih.gov/30104703
Characteristics of Ga-doped ZnO films deposited by pulsed DC magnetron sputtering at low temperature
Publikováno v:
Materials Science in Semiconductor Processing. 16:1957-1963
Characteristics of Ga-doped ZnO (GZO) transparent conductive oxide films have been investigated based on the absorption behavior and chemical states of dopant Ga in the film. GZO samples were prepared by pulsed DC magnetron sputtering at 423 K by var
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43c11015f5154d860e3c0934b3da4fd0
https://doi.org/10.1016/j.mssp.2013.07.026
https://doi.org/10.1016/j.mssp.2013.07.026
Autor:
Moon-Ho Ham, Jae Min Myoung, Doo Soo Kim, Su Jeong Lee, Woong Lee, Mi So Lee, Ji Hyeon Park, Kyung Jun Ahn
Publikováno v:
Materials Science in Semiconductor Processing. 16:997-1001
The effect of oxygen concentration on the properties of Al-doped ZnO (AZO) transparent conductive films has been investigated on the films deposited by pulsed DC magnetron sputtering using a cylindrical ZnO target containing 2 wt% Al. AZO films were
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c60728c0b3d33e0cf1625aaf025f0d1
https://doi.org/10.1016/j.mssp.2013.02.012
https://doi.org/10.1016/j.mssp.2013.02.012
Publikováno v:
Applied Surface Science. 271:216-222
Effect of sputtering power on the properties of ZnO:Ga (GZO) transparent conductive oxide (TCO) films was investigated on the films deposited by pulsed DC magnetron sputtering with a rotating cylindrical target. At lower sputtering power up to 2.0 kW
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::573cefb949f374819559c13dfe2575ae
https://doi.org/10.1016/j.apsusc.2013.01.163
https://doi.org/10.1016/j.apsusc.2013.01.163
Publikováno v:
Journal of nanoscience and nanotechnology. 16(5)
Cu(In, Ga)S2 (CIGS) absorbers were prepared using two-step process. Cu-In-Ga precursors were deposited by sputtering method and then were sulfurized by rapid thermal process based on H2S gas. Sulfurization temperature was changed from 470 degrees C t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::2b71612f8066b95f5302a1fb20121286
https://pubmed.ncbi.nlm.nih.gov/27483834
https://pubmed.ncbi.nlm.nih.gov/27483834