Zobrazeno 1 - 10 of 27 pro vyhledávání: '"Kyung-Chae Yang"'
3
Highly oxidation-resistant silver nanowires by C
Autor: Kyung Chae, Yang, Da In, Sung, Ye Ji, Shin, Geun Young, Yeom
Publikováno v: Nanotechnology. 30(28)
We demonstrate plasma-treated Ag nanowires (NWs) as flexible transparent electrode materials with enhanced long-term stability against oxidation even in a high humidity environment (80% humidity, 20 °C). Through a simple fluorocarbon (C
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=pmid________::f9c12e59764eec857fc47eb3d49089f3
https://pubmed.ncbi.nlm.nih.gov/30893668
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5
Influence of pulsed bias frequency on the etching of magnetic tunneling junction materials
Autor: Min Hwan Jeon, Viet Phuong Pham, Geun Young Yeom, Tae Hun Shim, Du Yeong Lee, Sung Woo Park, Kyung Chae Yang, Jea-Gun Park
Publikováno v: Vacuum. 127:82-87
The effect of different bias frequencies during the etching of magnetic tunneling junction materials in an inductively coupled plasma with rf pulse biasing (50% duty percentage) on etch characteristics was investigated. The decrease of rf bias freque
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::39fe2cb79439371d96b86e4c7789abf7
https://doi.org/10.1016/j.vacuum.2016.02.008
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7
Etch characteristics of Si and TiO2 nanostructures using pulse biased inductively coupled plasmas
Autor: Kyung-Chae Yang, Kyongnam Kim, Soo-Gang Kim, Jeong Yub Lee, Ye-Ji Shin, Yeon-hee Kim, Geun Young Yeom, Dongwoo Kim
Publikováno v: Nanotechnology. 31:265302
The etch characteristics of Si and TiO2 nanostructures for optical devices were investigated using pulse biased inductively coupled plasmas (ICP) with SF2/C4F8/Ar and BCl3/Ar, respectively, and the results were compared with those etched using contin
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4e90fe2c8993684ac555ebdcc7e1b64f
https://doi.org/10.1088/1361-6528/ab7c75
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8
Application of Pulsed Plasmas for Nanoscale Etching of Semiconductor Devices : A Review
Autor: Kyung Chae Yang, Tae Ho Shin, Sung Woo Park, Geun Young Yeom
Publikováno v: Journal of the Korean institute of surface engineering. 48:360-370
As the size of the semiconductor devices shrinks to nanometer scale, the importance of plasma etching process to the fabrication of nanometer scale semiconductor devices is increasing further and further. But for the nanoscale devices, conventional p
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ead822a44aaad04a501a1b52f2103ea4
https://doi.org/10.5695/jkise.2015.48.6.360
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9
Effect of pulse phase lag in the dual synchronized pulsed capacitive coupled plasma on the etch characteristics of SiO2 by using a C4F8/Ar/O2 gas mixture
Autor: Kyong Nam Kim, Kyung Chae Yang, Geun Young Yeom, Min Hwan Jeon
Publikováno v: Vacuum. 121:294-299
The characteristics of a synchronized pulse plasma using 60 MHz radio frequency as a source power and 2 MHz radio frequency as a bias power were investigated for the etching of SiO 2 masked with an amorphous carbon layer (ACL) in a C 4 F 8 /Ar/O 2 ga
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::fc469d130e46cb43eb780e032fff09c3
https://doi.org/10.1016/j.vacuum.2015.05.009
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10
Etch Characteristics of Magnetic Tunnel Junction Materials Using Bias Pulsing in the CH4/N2O Inductively Coupled Plasma
Autor: Min Hwan Jeon, Geun Young Yeom, Deok Hyun Yun, Ji Youn Youn, Kyung Chae Yang, Jea-Gun Park, Tae Hun Shim, Du Yeong Lee
Publikováno v: Journal of Nanoscience and Nanotechnology. 14:9541-9547
The etch characteristics of magnetic tunneling junction (MTJ) related materials such as CoFeB, MgO, FePt, Ru, and W as hard mask have been investigated as functions of rf pulse biasing, substrate heating, and CH4/N2O gas combination in an inductively
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5f4e0c00b0ac2acbe5e740bca7fa8cca
https://doi.org/10.1166/jnn.2014.10190
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