Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Kyung Seok, Woo"'
Autor:
Kyung Seok Woo, Alan Zhang, Allison Arabelo, Timothy D. Brown, Minseong Park, A. Alec Talin, Elliot J. Fuller, Ravindra Singh Bisht, Xiaofeng Qian, Raymundo Arroyave, Shriram Ramanathan, Luke Thomas, R. Stanley Williams, Suhas Kumar
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-9 (2024)
Abstract While digital computers rely on software-generated pseudo-random number generators, hardware-based true random number generators (TRNGs), which employ the natural physics of the underlying hardware, provide true stochasticity, and power and
Externí odkaz:
https://doaj.org/article/2582b4e475ea4c4097b339c5d489c17b
Autor:
Kyung Seok Woo, Janguk Han, Su-in Yi, Luke Thomas, Hyungjun Park, Suhas Kumar, Cheol Seong Hwang
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-9 (2024)
Abstract Information security and computing, two critical technological challenges for post-digital computation, pose opposing requirements – security (encryption) requires a source of unpredictability, while computing generally requires predictabi
Externí odkaz:
https://doaj.org/article/fd835305289b4eafbfda729cb705eb85
Publikováno v:
Nature Communications, Vol 13, Iss 1, Pp 1-8 (2022)
Designing a computing scheme to solve complex tasks as the big data field proliferates remains a challenge. Here, the authors present a probabilistic bit generation hardware built using the random nature of Cu x Te1−x /HfO2/Pt memristors capable of
Externí odkaz:
https://doaj.org/article/950d36ecf3184345965e48b0a0c49bdd
Autor:
Yoon Ho Jang, Woohyun Kim, Jihun Kim, Kyung Seok Woo, Hyun Jae Lee, Jeong Woo Jeon, Sung Keun Shim, Janguk Han, Cheol Seong Hwang
Publikováno v:
Nature Communications, Vol 12, Iss 1, Pp 1-9 (2021)
Recently there has been an interest in utilising memristors as physical temporal kernels. Here, Jang et al demonstrate a physical temporal kernel using a memristor combined with a capacitor and resistor, where the additional circuit elements can be v
Externí odkaz:
https://doaj.org/article/5ae0334dfbfd4726836aa82657d7df91
Autor:
In Kyung Baek, Soo Hyung Lee, Yoon Ho Jang, Hyungjun Park, Jaehyun Kim, Sunwoo Cheong, Sung Keun Shim, Janguk Han, Joon-Kyu Han, Gwang Sik Jeon, Dong Hoon Shin, Kyung Seok Woo, Cheol Seong Hwang
Publikováno v:
Nanoscale Advances; 6/7/2024, Vol. 6 Issue 11, p2892-2902, 11p
Publikováno v:
Advanced Intelligent Systems, Vol 3, Iss 7, Pp n/a-n/a (2021)
Herein, a true random number generator (TRNG) based on a CuxTe1−x diffusive memristor (DM) using its threshold switching (TS) behavior is reported. The intrinsic stochasticity of the TS behavior contributes to the randomness of the TRNG system. The
Externí odkaz:
https://doaj.org/article/9febff8b32db4c83b5295aaf536d61dd
Autor:
Ghenzi, Nestor, Tae Won Park, Seung Soo Kim, Hae Jin Kim, Yoon Ho Jang, Kyung Seok Woo, Cheol Seong Hwang
Publikováno v:
Nanoscale Horizons; Mar2024, Vol. 9 Issue 3, p427-437, 11p
Autor:
Young Jae Kwon, Cheol Seong Hwang, Dae Eun Kwon, Yu Min Kim, Kyung Seok Woo, Hae Jin Kim, Jung Ho Yoon
Publikováno v:
Journal of Materials Chemistry C. 8:1755-1761
This study investigates the bipolar resistive switching property of a silicon nitride (Si3N4−x) thin film deposited by plasma-enhanced chemical vapor deposition using SiH4 and NH3 as the Si precursor and N source, respectively, at a wafer temperatu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f207224d12c5c0654ece2c8724505fa
https://doi.org/10.1039/c9tc05336k
https://doi.org/10.1039/c9tc05336k
Publikováno v:
Advanced Intelligent Systems, Vol 3, Iss 7, Pp n/a-n/a (2021)
Herein, a true random number generator (TRNG) based on a CuxTe1−x diffusive memristor (DM) using its threshold switching (TS) behavior is reported. The intrinsic stochasticity of the TS behavior contributes to the randomness of the TRNG system. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3340dd31966d15508b825f2e568ac032
https://doi.org/10.1002/aisy.202170057
https://doi.org/10.1002/aisy.202170057
Autor:
Yoon Kyeung Lee, Manick Ha, Kyung Seok Woo, Woohyun Kim, Jeong Woo Jeon, Chanyoung Yoo, Gil Seop Kim, Eui-Sang Park, Cheol Seong Hwang
Publikováno v:
ACS applied materialsinterfaces. 11(42)
Chalcogenide materials have been regarded as strong candidates for both resistor and selector elements in passive crossbar arrays owing to their dual capabilities of undergoing threshold and resistance switching. This work describes the bipolar resis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8f9f50084d121bd9bab63b109a9f7bb0
https://pubmed.ncbi.nlm.nih.gov/31550128
https://pubmed.ncbi.nlm.nih.gov/31550128