Zobrazeno 1 - 10
of 57
pro vyhledávání: '"Kyung Eun Park"'
Publikováno v:
Case Studies in Thermal Engineering, Vol 61, Iss , Pp 104881- (2024)
This study analyzes the potential for energy saving through the integration of a photovoltaic-thermal (PVT) system with a heat pump (HP) in a community with a small-scale thermal network. An empirical study was conducted in a community to analyze and
Externí odkaz:
https://doaj.org/article/72d53db97e224afaa6bc52b1a3283506
Publikováno v:
IEICE Transactions on Electronics. :589-595
Publikováno v:
Information, Vol 12, Iss 2, p 80 (2021)
In the distance estimation scheme using Frequency-Modulated-Continuous-Wave (FMCW) radar, the frequency difference, which was caused by the time delay of the received signal reflected from the target, is calculated to estimate the distance informatio
Externí odkaz:
https://doaj.org/article/a27aca51f2ce4e868aa15aa7c9f1498c
Autor:
Hana Cho, Sun Young Park, Dayoung Youn, Kyung Eun Park, Jin Hui Joo, Min Hee Lee, Dong-Sik Shin
Publikováno v:
Talanta. 253:123976
Publikováno v:
Journal of Martial Arts. 14:157-177
Autor:
Shun-ichiro Ohmi, Kyung Eun Park
Publikováno v:
IEICE Transactions on Electronics. :293-298
Autor:
Dae Hee Han, Min Gee Kim, Kyung Eun Park, Seung Pil Han, Byung Eun Park, Soo Yong Kim, Gwang Geun Lee
Publikováno v:
Journal of the Korean Physical Society. 76:1088-1091
Paper transistors have the advantages of recyclability, high abundance, low cost, disposability, and biodegradability. In this paper, a nonvolatile transistor fabricated on a paper substrate without protective layers by using solution-based methods i
Publikováno v:
Electronics
Volume 10
Issue 17
Electronics, Vol 10, Iss 2166, p 2166 (2021)
Volume 10
Issue 17
Electronics, Vol 10, Iss 2166, p 2166 (2021)
In this paper, we propose a deep learning-based indoor two-dimensional (2D) localization scheme using a 24 GHz frequency-modulated continuous wave (FMCW) radar. In the proposed scheme, deep neural network and convolutional neural network (CNN) models
Publikováno v:
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE. 19:287-291
Publikováno v:
Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials.