Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Kyung Cheol Jeong"'
Publikováno v:
Integrated Ferroelectrics. 36:285-294
Ru films were deposited on TiN and SiO2 layers by metal organic chemical vapor deposition (MOCVD) at various deposition temperatures. We have used Ru(C8H13O2)3 as a Ru source and O2 as a reaction gas. The deposition of Ru films was controlled by surf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a384804c291fb0006d24baa2545639b1
https://doi.org/10.1080/10584580108015550
https://doi.org/10.1080/10584580108015550
Autor:
Younsoo Kim, Jae-Hyun Joo, Jong-Burn Park, Jun-sik Lee, Jong-woo Yoon, Kyung-Cheol Jeong, Jae-Sung Roh
Publikováno v:
ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361).
RuO/sub x/ thin films were deposited on TiN/SiO/sub 2//Si substrates by metal organic chemical vapor deposition (MOCVD) at deposition temperatures of 250/spl deg/C-400/spl deg/ C. We have used Ru(mhd), as a metal organic (MO) source. No films were de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee5ebca472ae1abf2604622c93616a5c
https://doi.org/10.1109/icvc.1999.820985
https://doi.org/10.1109/icvc.1999.820985
Publikováno v:
Japanese Journal of Applied Physics. 40:5201
Chemical vapor deposited (CVD) Ru was adopted as a bottom electrode of Ta2O5 capacitor for application to gigabit scale dynamic random access memory (DRAM). Ru film was deposited with the precursor of tris(2,4-octanedionato)ruthenium, Ru(od)3, at 260
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::28e836700aea280eda351dea3f453ad8
https://doi.org/10.1143/jjap.40.5201
https://doi.org/10.1143/jjap.40.5201
Autor:
Younsoo Kim, Kyung-Cheol Jeong, Jae-Hyun Joo, Jong-Burn Park, Jun-Sik Lee, Jong-Woo Yoon, Jae-Sung Roh
Publikováno v:
ICVC '99 6th International Conference on VLSI & CAD (Cat No99EX361); 1999, p501-503, 3p