Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Kyung–Mun Byun"'
Autor:
Won-Jong Lee, Kyung-Mun Byun
Publikováno v:
Current Applied Physics. 7:113-117
We have investigated the effects of pulsed plasma on the low temperature (380 °C) growth of Pb-based ferroelectric films using direct liquid injection metalorganic chemical vapor deposition (DLI-MOCVD). With an appropriately tuned pulsed plasma, sto
Publikováno v:
Japanese Journal of Applied Physics. 41:6153-6164
Ta(Si)N thin films were fabricated by transformer coupled plasma enhanced chemical vapor deposition (TCPECVD) using a pentakisdiethylaminotantalum [PDEAT, Ta(N[C2H5]2)5] metal organic source and SiH4 at 350°C or lower temperatures for various deposi
Autor:
Won-Jong Lee, Kyung-Mun Byun
Publikováno v:
Thin Solid Films. 376:26-31
Fluorinated silicon oxide (SiOF) film having low dielectric constant is hygroscopic, a characteristic which leads to the increase in the dielectric constant by the formation of highly polar –OH bonds in the film. We prepared SiOF films by electron
Autor:
Won-Jong Lee, Kyung-Mun Byun
Publikováno v:
Metals and Materials. 6:155-160
SiOF film has attracted significant attention as a new interlayer dielectric material since it exhibits a lower dielectric constant than SiO2. In this study, we prepared SiOF films by using the electron cyclotron resonance plasma-enhanced chemical va
Autor:
Deok-Young Jung, Joo-Tae Moon, Mun-jun Kim, Jun-Won Lee, Kyung-Mun Byun, Seok-Woo Nam, Eunkee Hong, Hyongsoo Kim, Chilhee Chung, Seung-Heon Lee, Jung-Hoo Lee, Hyo-sug Lee, Mansug Gang
Publikováno v:
2010 IEEE International Interconnect Technology Conference.
A highly robust gap-fill process technology of spin-on glass (SOG) was developed for the interlayer dielectric (ILD) in sub-30nm devices. We revealed that the filling behavior of SOG within gaps during spin-coating is mainly dependent on the capillar
Autor:
Kyung-Mun Byun, Yong-Won Cha, Kim Min, Hyeon-deok Lee, In-Sun Park, Chang-Lyong Song, Sang-Hyeon Lee, Do-hyung Kim, Joo-Beom Lee
Publikováno v:
2005 International Conference on Integrated Circuit Design and Technology, 2005. ICICDT 2005..
We have attempted to reduce the plasma-induced damage to the thin gate oxides during intermetal dielectric (IMD) gap-fill process by high-density plasma (HDP) chemical vapor deposition (CVD). It was revealed that the optimization of preheating step c
Autor:
Won-Jong Lee, Kyung-Mun Byun
Publikováno v:
Japanese Journal of Applied Physics. 43:2655
The IrO2 film has been regarded as a leading candidate bottom electrode of ferroelectric capacitors in ferroelectric random access memories (FRAMs). We have addressed a new issue on the thermochemical stability of IrO2 bottom electrodes during the gr
Publikováno v:
Japanese Journal of Applied Physics. 36:L1242
The composition of a thin film measured by wavelength dipersive spectroscopy (WDS) deviates from the actual value if the film thickness is less than the X-ray generation depth of the elements measured. For multielement films, the measured concentrati
Autor:
Kyung-Mun Byun, Deok-Young Jung, Jun-Won Lee, Seungheon Lee, Hyongsoo Kim, Mun-Jun Kim, Eunkee Hong, Mansug Gang, Seok-Woo Nam, Joo-Tae Moon, Chilhee Chung, Jung-Hoo Lee, Hyo-Sug Lee
Publikováno v:
Interconnect Technology Conference (IITC), 2010 International; 2010, p1-3, 3p