Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Kyuhyun Bang"'
Autor:
Kyuhyun Bang, Sang-Soo Chee, Kangmi Kim, Myungwoo Son, Hanbyeol Jang, Byoung Hun Lee, Kwang Hyeon Baik, Jae-Min Myoung, Moon-Ho Ham
Publikováno v:
Nano Convergence, Vol 5, Iss 1, Pp 1-7 (2018)
Abstract There has been growing interest in developing nanoelectronic devices based on graphene because of its superior electrical properties. In particular, patterning graphene into a nanoribbon can open a bandgap that can be tuned by changing the r
Externí odkaz:
https://doaj.org/article/2ba53f43d3e04538b818e699d791e886
Autor:
Myungwoo Son, Kwang Hyeon Baik, Ji Hyun Jun, Jae Min Myoung, Gi Cheol Son, Moon-Ho Ham, Heeju An, Kyuhyun Bang
Publikováno v:
Journal of Alloys and Compounds. 739:41-46
We report the structural and electrical properties of Li-doped ZnO (LZO) films, which are spin-coated via a simple solution process using Zn and Li precursor solutions. The Li doping improves the crystallinity of the ZnO films, and the LZO films exhi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::310c0fb27f638e6f013d7f0f4cbee80f
https://doi.org/10.1016/j.jallcom.2017.12.186
https://doi.org/10.1016/j.jallcom.2017.12.186
Publikováno v:
Current Applied Physics. 17:842-846
We studied the In incorporation efficiency and composition distribution in a nonpolar a -plane InGaN ( a -InGaN) quantum well (QW) layer. The In compositions decreased with increasing growth temperatures due to increased In desorption from InGaN surf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81018dc95d6b724db2f7c67416821188
https://doi.org/10.1016/j.cap.2017.03.016
https://doi.org/10.1016/j.cap.2017.03.016
Autor:
Sang-Soo Chee, Jae Min Myoung, Byoung Hun Lee, Moon-Ho Ham, Kwang Hyeon Baik, Hanbyeol Jang, Kangmi Kim, Kyuhyun Bang, Myungwoo Son
Publikováno v:
Nano Convergence
Nano Convergence, Vol 5, Iss 1, Pp 1-7 (2018)
Nano Convergence, Vol 5, Iss 1, Pp 1-7 (2018)
There has been growing interest in developing nanoelectronic devices based on graphene because of its superior electrical properties. In particular, patterning graphene into a nanoribbon can open a bandgap that can be tuned by changing the ribbon wid
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f34bb48de6437f78f7c59b699b815926
https://doi.org/10.1186/s40580-018-0139-0
https://doi.org/10.1186/s40580-018-0139-0
Autor:
Younghak Chang, Kyuhyun Bang, Sukkoo Jung, Hyunggu Kim, Sung-Min Hwang, Yoonho Choi, Kwang Hyeon Baik
Publikováno v:
Semiconductor Science and Technology. 27:024017
We report on high brightness nonpolar a-plane InGaN/GaN LEDs using patterned lateral overgrowth (PLOG) epitaxy. High crystal-quality and smooth surfaces for a-plane GaN (a-GaN) films were achieved using PLOG with an array of hexagonal SiO2 patterns.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b722dbdd41c31775d98776aa64755ad
https://doi.org/10.1088/0268-1242/27/2/024017
https://doi.org/10.1088/0268-1242/27/2/024017