Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Kyu-Man Hwang"'
Autor:
Yang-Kyu Choi, Ik Kyeong Jin, Seung-Wook Lee, Do Hyun Kim, Seong-Yeon Kim, Jae Hur, Kyu-Man Hwang, Wu-Kang Kim, Jun Woo Son
Publikováno v:
IEEE Transactions on Electron Devices. 65:5208-5212
The single-transistor latch in vertical pillar-type FETs with asymmetric source and drain (S/D) was investigated for capacitorless one transistor dynamic random access memory (1T-DRAM). The asymmetric S/D is produced by the different energies of ion
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b5c46285c1622978ecd94a9732cf3e9
https://doi.org/10.1109/ted.2018.2869670
https://doi.org/10.1109/ted.2018.2869670
Autor:
Yang-Kyu Choi, Hagyoul Bae, Minho Kang, Seung-Bae Jeon, Seungbum Hong, Myung-Su Kim, Myungsoo Seo, Byung Chul Jang, Sung-Yool Choi, Wu-Kang Kim, Seokjung Yun, Kyu-Man Hwang, Jae Hur, Seongwoo Cho
Publikováno v:
IEEE Electron Device Letters. 39:1445-1448
A highly scalable synapse device based on a junctionless (JL) ferroelectric (FE) FinFET is presented for neuromorphic applications. The synaptic behaviors of the JL metal-ferroelectric-insulator-silicon FinFET were experimentally demonstrated after v
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::156678736898999bdd4e3222e1339888
https://doi.org/10.1109/led.2018.2852698
https://doi.org/10.1109/led.2018.2852698
Autor:
Yang-Kyu Choi, Kyu-Man Hwang, Do Hyun Kim, Sung Kwan Lim, Seong-Yeon Kim, Choong-Ki Kim, Seung-Wook Lee, Geon-Beom Lee, Hagyoul Bae, Myungsoo Seo, Byoung Hun Lee
Publikováno v:
IEEE Transactions on Electron Devices. 65:1640-1644
Deuterium (D2) annealing was applied to a poly-crystalline silicon thin-film transistor (poly-Si TFT) to improve reliability and performance. The field-effect electron mobility ( $\mu $ ) was extracted using the gate transconductance ( ${g}_{m}$ ) me
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::404ff6537a1ef44261bf471ada81b7aa
https://doi.org/10.1109/ted.2018.2805316
https://doi.org/10.1109/ted.2018.2805316
Autor:
Choong-Ki Kim, Yang-Kyu Choi, Hagyoul Bae, Seung-Wook Lee, Seong-Yeon Kim, Kyu-Man Hwang, Hwon Im, Do Hyun Kim, Jun-Young Park, Myungsoo Seo, Geon-Beom Lee
Publikováno v:
ACS Nano. 11:12547-12552
A physical unclonable function (PUF) device using a nano-electromechanical (NEM) switch was demonstrated. The most important feature of the NEM-switch-based PUF is its use of stiction. Stiction is one of the chronic problems associated with micro- an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8da31a29d9a602d138e3bf56dee9ad35
https://doi.org/10.1021/acsnano.7b06658
https://doi.org/10.1021/acsnano.7b06658
Autor:
Yang-Kyu Choi, Dong-Il Moon, Byung Chul Jang, Seung-Wook Lee, Sung-Yool Choi, Seong-Yeon Kim, Do Hyun Kim, Kyu-Man Hwang, Tewook Bang, Choong-Ki Kim, Myungsoo Seo, Hagyoul Bae
Publikováno v:
IEEE Electron Device Letters. 38:1008-1011
The low-frequency noise (LFN) characteristics of a vertical pillar-type FET were investigated in order to observe the different influences of the source resistance ( $R_{S})$ and the drain resistance ( $R_{D})$ . Because of its inherent vertical chan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c1de5ba76c255ad324d22045e5aa6b87
https://doi.org/10.1109/led.2017.2718032
https://doi.org/10.1109/led.2017.2718032
Publikováno v:
Small (Weinheim an der Bergstrasse, Germany). 15(3)
A nano-electromechanical (NEM) switch using multilevel states based on the high security physical unclonable function (PUF) is proposed and experimentally demonstrated. Using the asymmetric random stiction of a silicon nanowire (SiNW), the convention
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5208bac6d716c477cf1e70be19043661
https://pubmed.ncbi.nlm.nih.gov/30474321
https://pubmed.ncbi.nlm.nih.gov/30474321
Publikováno v:
Small. 15:1970015
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb8eed22623f193b6a03a109f8b16c56
https://doi.org/10.1002/smll.201970015
https://doi.org/10.1002/smll.201970015
Autor:
Dongwoo Nam, Kyu-Chul Kim, Soon-oh Park, Eunseung Jeong, Jin Choi, Juhyeon Ahn, Sang-Sup Jeong, Jun-Soo Bae, Kyu-Man Hwang, Cheol-Woong Yang, Kwangho Park, Han-Ku Cho
Publikováno v:
SPIE Proceedings.
Magnetic Random Access Memory (MRAM) has emerged as the leading candidate for future universal memory due to its non-volatility, excellent endurance and read/write performance. The magnetic tunnel junction (MTJ) is a data storage element in MRAM and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e3a69aa1db0aba44313521cdc8cd6408
https://doi.org/10.1117/12.2026767
https://doi.org/10.1117/12.2026767
Autor:
Hagyoul Bae, Choong-Ki Kim, Geon-Beom Lee, Yang-Kyu Choi, Do-Hyun Kim, Seong-Yeon Kim, Sung Kwan Lim, Seung-Wook Lee, Myungsoo Seo, Kyu-Man Hwang, Byoung Hun Lee
Publikováno v:
IEEE Transactions on Electron Devices; Apr2018, Vol. 65 Issue 4, p1640-1644, 5p
Autor:
D.H. Jang, H.S. Jeong, Gitae Jeong, S. W. Nam, Dong-ho Ahn, Sanghyeon Jeon, Shinhyung Kim, Kyu-Man Hwang, Jung-Dal Choi, Jun-Soo Bae, Han-Ku Cho, Kwangho Park, Chan-Hoon Park, Jung-Chak Ahn
Publikováno v:
2012 IEEE International Reliability Physics Symposium (IRPS).
Endurance failures are classified into three groups, all of which originate from the atomic transport of GST due to electromigration in molten phase. Based on the analysis, cell structure insusceptible to the atomic transport and for better cycling p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::24b64aa7d8e63f144b6adad055eac0c2
https://doi.org/10.1109/irps.2012.6241900
https://doi.org/10.1109/irps.2012.6241900