Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Kyu-Bong Choi"'
Autor:
Kyu-Bong Choi, Sung Yun Woo, Won-Mook Kang, Soochang Lee, Chul-Heung Kim, Jong-Ho Bae, Suhwan Lim, Jong-Ho Lee
Publikováno v:
Frontiers in Neuroscience, Vol 12 (2018)
Hardware-based spiking neural networks (SNNs) to mimic biological neurons have been reported. However, conventional neuron circuits in SNNs have a large area and high power consumption. In this work, a split-gate floating-body positive feedback (PF)
Externí odkaz:
https://doaj.org/article/a7d60555a937429c9c18e5598f56bc8f
Autor:
Byung-Gook Park, Jong-Ho Bae, Suhwan Lim, Kyu-Bong Choi, Sung Yun Woo, Sung-Tae Lee, Chul-Heung Kim, Dongseok Kwon, Jong-Ho Lee, Won-Mook Kang
Publikováno v:
Solid-State Electronics. 156:23-27
We fabricate a floating fin-body MOSFET with charge trap layer on p-type (1 0 0) Si wafer and investigate the characteristics of the fabricated device as a synaptic device. To implement the long-term potentiation (LTP) and long-term depression (LTD),
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b6ca2a6e4bc278620eba558cc20f9e42
https://doi.org/10.1016/j.sse.2019.02.011
https://doi.org/10.1016/j.sse.2019.02.011
Autor:
Jong-Ho Bae, Jangsaeng Kim, Won-Mook Kang, Byung-Gook Park, Jong-Ho Lee, Sung Yun Woo, Chul-Heung Kim, Kyu-Bong Choi
Publikováno v:
2019 Electron Devices Technology and Manufacturing Conference (EDTM).
A scaled positive feedback (PF) device based on 14 nm FinFET technology is systematically investigated by using TCAD simulation tool. By adapting multiple gates to a scaled PF device, electrical electron and hole injection barriers are formed without
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c2c92c57e1b62bceaef6803296339ee
https://doi.org/10.1109/edtm.2019.8731117
https://doi.org/10.1109/edtm.2019.8731117
Autor:
Jong-Ho Lee, Kyu-Bong Choi
Publikováno v:
Vacuum Magazine. 3:16-21
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5909bf84c6136ca6555159ef3018c24
https://doi.org/10.5757/vacmac.3.1.16
https://doi.org/10.5757/vacmac.3.1.16
Autor:
Won-Mook Kang, Kyu-Bong Choi, Chul-Heung Kim, Jangsaeng Kim, Young-Tak Seo, Jong-Ho Lee, Jong-Ho Bae, Byung-Gook Park, Sung Yun Woo
Publikováno v:
Solid-State Electronics. 165:107741
The homeostatic neuron circuit using a double-gate MOSFET is proposed to imitate a homeostasis functionality of a biological neuron in spiking neural networks (SNN) based on a spike-timing dependent plasticity (STDP). The threshold voltage (Vth) of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::473e4e0d9041c1786707e6315c89c7ea
https://doi.org/10.1016/j.sse.2019.107741
https://doi.org/10.1016/j.sse.2019.107741
Autor:
Jong-Ho Bae, Jong-Ho Lee, Sung Yun Woo, Soochang Lee, Chul-Heung Kim, Won-Mook Kang, Suhwan Lim, Kyu-Bong Choi
Publikováno v:
Frontiers in Neuroscience, Vol 12 (2018)
Frontiers in Neuroscience
Frontiers in Neuroscience
Hardware-based spiking neural networks (SNNs) to mimic biological neurons have been reported. However, conventional neuron circuits in SNNs have a large area and high power consumption. In this work, a split-gate floating-body positive feedback (PF)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6be845f4504d21815f126fd3d2762f66
https://www.frontiersin.org/article/10.3389/fnins.2018.00704/full
https://www.frontiersin.org/article/10.3389/fnins.2018.00704/full
Publikováno v:
Journal of nanoscience and nanotechnology. 16(5)
An electron in the channel can be trapped into the trap inside gate oxide and detrapped into the channel, resulting in the fluctuation in drain current. To investigate the drain current fluctuation (ΔI(D)) caused by trapping/detrapping of an electro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7b1e309f5285ac576900af8cc2c954b7
https://pubmed.ncbi.nlm.nih.gov/27483825
https://pubmed.ncbi.nlm.nih.gov/27483825
Publikováno v:
ASICON
Design of 14 nm bulk FinFET is discussed and some properties are analyzed physically. The source/drain junction depth is the most important parameter to reduce off-current, and a punchthrough barrier of a peak concentration higher than ∼2×1018 cm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::13ff4c7a48a45a2116cfd9f7efb8ea58
https://doi.org/10.1109/asicon.2013.6811940
https://doi.org/10.1109/asicon.2013.6811940
Publikováno v:
2013 IEEE 10th International Conference on ASIC; 2013, p1-3, 3p
Autor:
Choi, Kyu-Bong, Woo, Sung Yun, Kang, Won-Mook, Lee, Soochang, Kim, Chul-Heung, Bae, Jong-Ho, Lim, Suhwan, Lee, Jong-Ho
Publikováno v:
Frontiers in Neuroscience; 10/9/2018, pN.PAG-N.PAG, 13p