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Akademický článek

Substrate Effects on the Electrical Properties in GaN-Based High Electron Mobility Transistors

Autor: Sung-Jae Chang, Kyu-Jun Cho, Sang-Youl Lee, Hwan-Hee Jeong, Jae-Hoon Lee, Hyun-Wook Jung, Sung-Bum Bae, Il-Gyu Choi, Hae-Cheon Kim, Ho-Kyun Ahn, Jong-Won Lim

Publikováno v: Crystals, Vol 11, Iss 11, p 1414 (2021)

We report the electrical characteristics of GaN-based high electron mobility transistors (HEMTs) operated on various substrates/films. For the detailed investigation and comparison of the electrical properties of GaN-based HEMTs according to the subs

Externí odkaz: https://doaj.org/article/499bcfa0b2c14cde967ac96b2b7f0f8e

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Impact of Passivation System on Device Performance and Proton Radiation Hardness in GaN-Based MIS-HEMTs

Autor: Sung-Jae Chang, Seong-Il Kim, Soo Cheol Kang, Kyu Jun Cho, Jong-Won Lim, Hae Cheon Kim, Hyun-Wook Jung, Sang-Heung Lee, Hokyun Ahn, Youn Sub Noh

Publikováno v: ECS Transactions. 98:519-526

GaN-based metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) are intensively investigated for high power, high frequency [1] and aerospace application [2] due to its wide bandgap, high breakdown field, and high carrier densi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8538bc1238c07702c4a659e03b4d2992
https://doi.org/10.1149/09805.0519ecst

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Substrate Effects on the Electrical Properties in GaN-Based High Electron Mobility Transistors

Autor: Hokyun Ahn, Jong-Won Lim, Haecheon Kim, Sungjae Chang, Sang-Youl Lee, Hyun-Wook Jung, Hwan-Hee Jeong, Il-Gyu Choi, Jae-Hoon Lee, Kyu-Jun Cho, Sung-Bum Bae

Publikováno v: Crystals; Volume 11; Issue 11; Pages: 1414
Crystals, Vol 11, Iss 1414, p 1414 (2021)

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::725dfe926385aa13e48f27d7d060e6df
https://doi.org/10.3390/cryst11111414

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Characterization of 0.18-μm gate length AlGaN/GaN HEMTs on SiC fabricated using two-step gate recessing

Autor: Min Jeong Shin, Dong Min Kang, Hae Cheon Kim, Jongmin Lee, Hyun-Wook Jung, Jae-Won Do, Jong-Won Lim, Ho Kyun Ahn, Sungil Kim, Kyu-Jun Cho, Hyung Sup Yoon, Byoung-Gue Min

Publikováno v: Journal of the Korean Physical Society. 71:360-364

We fabricated a 0.18-μm gate-length AlGaN/GaN high electron mobility transistor (HEMT) on SiC substrate fabricated by using two-step gate recessing which was composed of inductively coupled plasma (ICP) dry etching with a gas mixture of BCl3/Cl2 and

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3c05c41221bd5fdbf05d8fda6812c56d
https://doi.org/10.3938/jkps.71.360

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The effects of tetramethylammonium hydroxide treatment on the performance of recessed-gate AlGaN/GaN high electron mobility transistors

Autor: Kyu Jun Cho, Hyung Sup Yoon, Hokyun Ahn, Jung-Hee Lee, Ryun-Hwi Kim, Haecheon Kim, Ji-Heon Kim, Sung-Jae Chang, Jae-Won Do, Jin-Mo Yang, Jong-Won Lim, Min Jeong Shin, Byoung-Gue Min, Hyun-Wook Jung

Publikováno v: Thin Solid Films. 628:31-35

AlGaN/GaN high electron mobility transistors (HEMTs) are fabricated using a gate recess process and a surface treatment with tetramethylammonium hydroxide (TMAH) prior to gate metal deposition. Electrical characterizations show improved extrinsic tra

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::cc38158fc15b086825a2cfab84af99fb
https://doi.org/10.1016/j.tsf.2017.02.053

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