Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Kyoungyong Cho"'
Autor:
Hyungju Ryu, Dokyeong Kwon, Jiho Song, Wongi Park, Jinseong Gwak, Haram Ko, Jiyoung Lee, Jinpyoung Kim, Kyungseok Ryu, Sungjo Hwang, Taemin Jeong, Heeyoung Go, Yigwon Kim, Kyoungyong Cho, Sangjin Kim, Changmin Park
Publikováno v:
Optical and EUV Nanolithography XXXVI.
Autor:
Sangjin Kim, Il-Hwan Kim, Hyungju Ryu, Yongbeom Seo, Yigwon Kim, Jinhee Jang, Tae-Min Choi, Sol Jeong, Yongchul Jeong, Kyoungyong Cho, Cheolin Jang, Kyeongbeom Park, Changmin Park
Publikováno v:
Optical and EUV Nanolithography XXXVI.
Publikováno v:
Journal of Photopolymer Science and Technology. 25:87-94
Autor:
Markos Trikeriotis, Christopher K. Ober, Brian Cardineau, Robert L. Brainard, Christine Y. Ouyang, Yeon Sook Chung, Marie Krysaki, Kyoungyong Cho, Emmanuel P. Giannelis
Publikováno v:
Journal of Photopolymer Science and Technology. 25:583-586
Autor:
Hyungcheol Shin, Il Han Park, Kang-yoon Lee, Tae Hun Kim, Hoon Jeong, Byung-Gook Park, Jun Seo, Kyoungyong Cho, Seong-Goo Kim, Jong Duk Lee, Ki-whan Song, Yeun Seung Lee
Publikováno v:
IEEE Transactions On Nanotechnology. 6:352-357
We propose a surrounding gate MOSFET with vertical channel (SGVC cell) as a 1T DRAM cell. To confirm the memory operation of the SGVC cell, we simulated its memory effect and fabricated the highly scalable SGVC cell. According to simulation and measu
Autor:
Christine Y. Ouyang, Souvik Chakrabarty, Markos Trikeriotis, Emmanuel P. Giannelis, Marie Krysak, Kyoungyong Cho, Christopher K. Ober
Publikováno v:
Extreme Ultraviolet (EUV) Lithography IV.
DUV, EUV and e-beam patterning of hybrid nanoparticle photoresists have been reported previously by Ober and coworkers. The present work explores the underlying mechanism that is responsible for the dual tone patterning capability of these photoresis
Autor:
Mark Neisser, Andrew Metz, Stefan Wurm, Akiteru Ko, Alexander Friz, Cecilia Montgomery, Karen Petrillo, Lior Huli, Dominic Ashworth, Takashi Saito, Kyoungyong Cho
Publikováno v:
Extreme Ultraviolet (EUV) Lithography IV.
Roughness control is a key technical issue in extreme ultraviolet (EUV) lithography. It applies to both line and space (L/S) and contact hole (C/H) structures. Recently, SEMATECH and Tokyo Electron Limited (TEL) developed several track-based techniqu
Publikováno v:
Extreme Ultraviolet (EUV) Lithography IV.
This paper demonstrates a new simulation-based methodology for optimizing critical dimension (CD) bias for contact holes (CH) arrays using several different extreme ultraviolet (EUV) resists that were fully calibrated and verified with physical resis
Autor:
Christine Y. Ouyang, Mark Neisser, Emmanuel P. Giannelis, Li Li, Christopher K. Ober, Yeon Sook Chung, Kyoungyong Cho
Publikováno v:
SPIE Proceedings.
As feature sizes continue to shrink, the need for new materials and processes becomes more urgent. In order to achieve high-resolution patterns and low line edge roughness (LER), there have been many studies on small molecular resists. In terms of pr
Publikováno v:
SPIE Proceedings.
The influence of resist formulation parameters on line width roughness (LWR) and line edge roughness (LER) were studied systematically. Studied parameters were photoacid generator (PAG) loading, blended versus polymer bound PAG type, PEB temperature,