Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Kyoungrak Cho"'
Autor:
Dongguk Han, Hoonchang Yang, Jinyeong Hwang, Jinseon Kim, Kyoungrak Cho, Incheol Nam, Daesun Kim, Beomseop Lee, Sungsoo Yim, Heeil Hong, Jooyoung Lee
Publikováno v:
International Symposium for Testing and Failure Analysis.
DRAM is a type of memory that stores each bit of data in a capacitor cell, leakage current is a very important electrical parameter to retain data. Therefore, larger cell capacitance and smaller leakage current have been regarded as key factors in co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::722e788f9026c2d60418095b845c2278
https://doi.org/10.31399/asm.cp.istfa2022p0362
https://doi.org/10.31399/asm.cp.istfa2022p0362
Autor:
Junsik Park, Dongin Seo, Keunchul Ryu, Sungsoo Yim, Incheol Nam, Jung-Bae Lee, Hoon-Chang Yang, Jonghoon Kim, Daesun Kim, Heeil Hong, Kyoungrak Cho
Publikováno v:
International Symposium for Testing and Failure Analysis.
As dimension shrinkage, uncommon phenomena have been occurring during write and read operation in DRAM. These phenomena are strongly related cell capacitance, and the sensitivity of leakage current increases. Leakage current, especially in cell capac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7187ed9d659daddbb24056c4fe7ae5dc
https://doi.org/10.31399/asm.cp.istfa2020p0277
https://doi.org/10.31399/asm.cp.istfa2020p0277