Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Kyoungnae Lee"'
Autor:
Anand Kadiyala, Kyoungnae Lee, L. E. Rodak, Lawrence A. Hornak, Dimitris Korakakis, Jeremy M. Dawson
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 2, Iss 2, Pp 16-22 (2014)
We demonstrate a method to improve the light extraction from an LED using photonic crystal (PhC)-like structures in metal contacts. A patterned metal contact with an array of Silicon Oxide (SiOx) pillars (440 nm in size) on an InGaN/GaN-based MQW LED
Externí odkaz:
https://doaj.org/article/e2077cc4b63b4d569ebace018560195e
Autor:
L. E. Rodak, Jeremy Dawson, Lawrence A. Hornak, Anand Kadiyala, Dimitris Korakakis, Kyoungnae Lee
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 2, Iss 2, Pp 16-22 (2014)
We demonstrate a method to improve the light extraction from an LED using photonic crystal (PhC)-like structures in metal contacts. A patterned metal contact with an array of Silicon Oxide (SiOx) pillars (440 nm in size) on an InGaN/GaN-based MQW LED
Publikováno v:
IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control. 59:1806-1811
SAW devices operating at the fundamental frequency and the 5th, 7th, 9th, and 11th harmonics have been designed, fabricated, and measured. Devices were fabricated on GaN thin films on sapphire substrates, which were grown via metal organic vapor phas
Autor:
Kyoungnae Lee, Anand Kadiyala, H. Yalamanchili, Dimitris Korakakis, Jeremy Dawson, L. E. Rodak
Publikováno v:
Microelectronic Engineering. 96:45-50
A simple and efficient spin coating method for large-scale fabrication of self-assembled silica nanospheres on Gallium Nitride (GaN) substrates is reported. A Matlab-based Nomarski image processing method was developed to calculate the surface covera
Autor:
Kyoungnae Lee, Brenda L. VanMil, C. H. Swartz, L. J. Holbert, Dimitris Korakakis, Ting Liu, Thomas H. Myers, Huicheng Guo
Publikováno v:
physica status solidi (c). 2:2174-2177
Growth of GaN by molecular beam epitaxy is limited by reduced growth rate related to thermal decomposition. Factors influencing thermal decomposition are growth species (atomic versus metastable molecular nitrogen), surface polarity (N- vs. Ga-polar)
Publikováno v:
physica status solidi (c). 2:2204-2207
Surface polarity related differences in the optical activity of Be in GaN epilayers grown by rf-plasma molecular beam epitaxy are investigated. N-polar GaN doped with Be exhibits a significantly higher intensity of donor-acceptor pair (DAP) photolumi
Autor:
Kyoungnae Lee, J. Justice, R. Goswami, L. E. Rodak, Lawrence A. Hornak, Jeremy Dawson, J. Peacock, Dimitris Korakakis, B. A. Bearce, V. Kumbham, Anand Kadiyala
Publikováno v:
MRS Proceedings. 1396
InxGa1-xN-based LED structures were grown on digital AlxGa1-xN/GaN DBR substrate to enhance emission extraction. Same LED structure was grown on sapphire substrate as a comparison. LEDs grown on DBR substrate exhibited similar IV characteristics to t
Publikováno v:
MRS Proceedings. 1415
Gallium nitride (GaN) is a robust piezoelectric semiconductor with excellent thermal and chemical stability, making it an attractive material for surface acoustic wave (SAW) sensors operating in high temperature and harsh environments. The sensitivit
Publikováno v:
MRS Proceedings. 1396
Use of aluminum alloyed zinc oxide (AZO) as a transparent contact to p-GaN has received significant attention for GaN/InGaN light emitting diodes applications. Reports show that AZO as deposited on p-GaN forms a Schottky contact given the large work-
Publikováno v:
MRS Proceedings. 1288
III-Nitride based Light Emitting Diodes (LEDs) are heavily pursued for various lighting applications due to the ability to engineer the emission through the visible wavelengths by controlling the alloy composition in the multi quantum well. Planar st