Zobrazeno 1 - 10
of 187
pro vyhledávání: '"Kyounghoon Yang"'
Publikováno v:
2022 Asia-Pacific Microwave Conference (APMC).
Publikováno v:
IEEE Electron Device Letters. 41:1308-1311
In this letter, we propose an area-efficient series-connected resonant tunneling diode pair device (SCRTD) to utilize as a binary neuron device in cellular neural networks (CNNs). The proposed SCRTD (P-SCRTD) consists of two RTDs interconnected by a
Publikováno v:
2019 IEEE Asia-Pacific Microwave Conference (APMC).
In this paper, on-chip de-embedding methods are compared by applying to transistor characterization for up to 110-GHz. 2-step and 3-step methods, based on lumped circuit models, and hybrid methods, which are a combination of a cascade model and the l
Autor:
Maengkyu Kim, Kyounghoon Yang
Publikováno v:
2019 Compound Semiconductor Week (CSW).
In this work, the output power of the RTD-pair configuration with two different RTD epitaxial layer structures has been characterized and compared by measurements and simulations. The RTD-pair configurations with the two device structures show the im
Autor:
Maengkyu Kim, Kyounghoon Yang
Publikováno v:
2019 Compound Semiconductor Week (CSW).
This work shows an RTD-pair oscillator for enhanced RF output power in a sub-THz frequency range. In order to increase the output power of the RTD oscillator, the RTD-pair configuration based on the improved RTD device structure has been employed. Th
Autor:
Youngsoo Shin, Kyounghoon Yang, Daniel J. Joe, Byoung Kuk You, Yeon Sik Jung, Keon Jae Lee, Jong Min Kim
Publikováno v:
ACS Nano. 10:9478-9488
Memristor devices based on electrochemical metallization operate through electrochemical formation/dissolution of nanoscale metallic filaments, and they are considered a promising future nonvolatile memory because of their outstanding characteristics
Publikováno v:
IEEE Transactions on Terahertz Science and Technology. 6:336-340
A resonant tunneling diode (RTD)-based oscillator operating at an output operation frequency of 1.52 THz is proposed. The proposed oscillator utilizes a unique negative differential conductance characteristic and a triple-push principle for high freq
Autor:
J.I. Lee, Kyounghoon Yang
Publikováno v:
Electronics Letters. 53:1058-1060
A reflection-type microwave amplifier using InP-based resonant tunnelling diodes (RTDs) has been designed and fabricated. The implemented amplifier shows a low dc-power consumption of 270 μW with RF gains of more than 11 dB at 5.61 GHz. Temperature-
Publikováno v:
IEEE Microwave and Wireless Components Letters. 27:660-662
This letter presents the high-data rate performance of a 7-Gb/s resonant tunneling diode (RTD)-based on-off keying (OOK) oscillator core with a heterojunction bipolar transistor (HBT) switch design. It is found that the integrated HBT switch improves
Autor:
Kyounghoon Yang, Jongwon Lee
Publikováno v:
IEEE Microwave and Wireless Components Letters. 27:61-63
This letter reports the analysis of RF power characteristics in a microwave amplifier using resonant tunneling diodes (RTDs). The implemented IC shows a return loss of more than 11 dB with a low dc-power consumption of 0.42 mW and a power gain of 8.6