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Publikováno v:
Ceramics International. 38:S623-S626
Transparent p–n heterojunction diodes based on oxide semiconductors were fabricated by RF magnetron sputtering on alkali-free glass substrates below 500 °C. 3% Al-doped ZnO (∼400 nm) was deposited as an n-type component, and SrCu 2 O 2 (∼290 n