Zobrazeno 1 - 10
of 72
pro vyhledávání: '"Kyoung-Hwan Yeo"'
Autor:
Faraz Najam, Sungwoo Hwang, Kyoung Hwan Yeo, Jong Seung Hwang, Dong-Won Kim, Keun Hwi Cho, Yun Seop Yu, Sansig Kim
Publikováno v:
IEEE Transactions on Electron Devices. 60:2457-2463
Si/SiO2 interface trap charge distribution of cylindrical cross-sectioned gate-all-around silicon nanowire field-effect transistor is extracted by using three-dimensional simulation. While the interface chemistry of conventional gatestack ( Si/SiO2 p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e7822e8e041076fa30be8aeef7a9c5e7
https://doi.org/10.1109/ted.2013.2268193
https://doi.org/10.1109/ted.2013.2268193
Autor:
Gyo-Young Jin, Kyoung Hwan Yeo, SeongJoo Lee, Donggun Park, Sungwoo Hwang, Dong-Won Kim, ByoungHak Hong, Keun Hwi Cho
Publikováno v:
JSTS:Journal of Semiconductor Technology and Science. 11:80-87
Low temperature hole transport characteristics of gate-all-around p-channel metal oxide semiconductor (PMOS) type silicon nanowire fieldeffect-transistors with the radius of 5 ㎚ and lengths of 44-46 ㎚ are presented. They show coexisting two singl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::893914eb19b091d70399578e3c55abdd
https://doi.org/10.5573/jsts.2011.11.2.080
https://doi.org/10.5573/jsts.2011.11.2.080
Autor:
Kyoung Hwan Yeo, Yoon-Ha Jeong, Hyun-Sik Choi, Yun Young Yeoh, Dong-Won Kim, Kinam Kim, Rock-Hyun Baek, Chang-Ki Baek, Jeong-Soo Lee, D.M. Kim
Publikováno v:
IEEE Transactions on Nanotechnology. 10:417-423
In this paper, the volume trap densities Nt are extracted from gate-all-around silicone-nanowire FETs with different gate oxides, using a cylindrical-coordinate-based flicker noise model developed. For extracting Nt, the drain-current power spectral
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cbfe0bccd6c0de406d118e31f7b733f8
https://doi.org/10.1109/tnano.2010.2044188
https://doi.org/10.1109/tnano.2010.2044188
Autor:
Dong-Won Kim, Sungwoo Hwang, Duck Kyoon Ahn, M H Son, ByoungHak Hong, Y. Y. Lee, Donggun Park, Young Chai Jung, Kyoung-hwan Yeo, Luryi Choi, Sang-Hun Song, Keun Hwi Cho, Gyo Young Jin
Publikováno v:
IEEE Transactions on Nanotechnology. 9:754-758
We report the random telegraph noise observed in gate-all-around (GAA) PMOS silicon nanowire FETs (SNWFETs) with the radius of 5 nm, at various temperatures (s) down to 4.2 K. From the -dependence of the capture/emission time, we obtain the energy an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba809fd5fafe6ac489a1a314ef70fe7d
https://doi.org/10.1109/tnano.2010.2045006
https://doi.org/10.1109/tnano.2010.2045006
Autor:
Keun Hwi Cho, Eun Jung Yoon, Sung Dae Suk, Dong-Won Kim, Sung-min Kim, Sung-young Lee, Ming Li, Sung Hwan Kim, Yun Young Yeoh, Chang Woo Oh, Min Sang Kim, Kyoung Hwan Yeo, Dong-gun Park
Publikováno v:
IEEE Transactions on Nanotechnology. 7:181-184
A gate-all-around (GAA) twin silicon nanowire MOSFET (TSNWFET) with 5-nm-radius channels on a bulk Si wafer is successfully fabricated to achieve extremely high-drive currents of 2.37 mA/ mum for n-channel and 1.30 mA/ mum for p-channel TSNWFETs with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::966857d2c56a7c85c5d0d50c777777ea
https://doi.org/10.1109/tnano.2008.917843
https://doi.org/10.1109/tnano.2008.917843
Autor:
Kyoung Hwan Yeo, N. Cho, Sang-Hun Song, Byoung Hak Hong, Jae-Sung Rieh, Luryi Choi, Dong-sik Park, Sungwoo Hwang, Young Chai Jung, Dong-Won Kim, Sul-Hwan Lee, Yun Seop Yu, Kyung Seok Oh, Gyo Young Jin, Keun Hwi Cho
Publikováno v:
IEEE Electron Device Letters. 32:1179-1181
We measured and analyzed the subthreshold degradation of the gate-all-around (GAA) silicon nanowire field-effect transistors with the length of 300/500 nm and the radius of 5 nm. An analytical model incorporating the effect of interface traps quantit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8867faec02af213d2f48c68b8425089f
https://doi.org/10.1109/led.2011.2159473
https://doi.org/10.1109/led.2011.2159473
Autor:
Yoon-Ha Jeong, Sung Dae Suk, Kyoung Hwan Yeo, Yun Young Yeoh, Jeong-Soo Lee, Dong-Won Kim, Ming Li, Sanghyun Lee, Rock-Hyun Baek, Chang-Ki Baek, D.M. Kim
Publikováno v:
IEEE Electron Device Letters. 32:116-118
Presented in this letter are the C-V data, measured from nanowire capacitors, which have been fabricated by connecting in parallel a large number of identically processed nanowire FETs. The C-V curves were examined over a range from accumulation to i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::516a5122cfb8b9b99db4e691ed53afaf
https://doi.org/10.1109/led.2010.2092409
https://doi.org/10.1109/led.2010.2092409
Autor:
Dongmok Whang, Sungwoo Hwang, Jae-Sung Rieh, Byoung Hak Hong, Won-Seong Lee, Dong-Won Kim, Kyoung Hwan Yeo, Young Chai Jung, Sang-Hun Song, Luryi Choi, Gyo Young Jin, Kyung Seok Oh, Keun Hwi Cho
Publikováno v:
IEEE Electron Device Letters. 30:665-667
The mobility-degradation factor and the series resistance of cylindrical gate-all-around silicon nanowire field-effect transistors are extracted using the same mobility-degradation model as in the case of planar MOSFETs. The extraction is done by def
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ac4d86b4e4e2ec748ba7fbd409ec76a
https://doi.org/10.1109/led.2009.2019977
https://doi.org/10.1109/led.2009.2019977
Autor:
Donggun Park, Sung Dae Suk, Ming Li, Yun Young Yeoh, Kyoung Hwan Yeo, Sungwoo Hwang, Dong-Won Kim, Keun Hwi Cho, Byung Hak Hong, Young Chai Jung, Won-Seong Lee
Publikováno v:
IEEE Electron Device Letters. 28:1129-1131
The characteristics of cylindrical gate-all-around twin silicon nanowire field-effect transistors with a radius of 5 nm have been measured in temperatures T ranging from 4 to 300 K. The dependence of the off-current suggests that thermal generation i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba4dadf6291b6be8491766c0bf9f52ff
https://doi.org/10.1109/led.2007.909868
https://doi.org/10.1109/led.2007.909868
Autor:
Donggun Park, Byung Moon Yoon, Eun Jung Yoon, Sung-min Kim, Sung-young Lee, Doo Youl Lee, Kyoung Hwan Yeo, Chang Woo Oh, Byung Chan Lee, Min Sang Kim, Hye-Jin Cho, Chang-Sub Lee, Kinam Kim, Jeong Dong Choe, Hwa Sung Rhee, Ilsub Chung, Sang Yeon Han
Publikováno v:
IEEE Electron Device Letters. 25:387-389
Highly manufacturable partially insulated field-effect transistors (PiFETs) were fabricated by using Si-SiGe epitaxial growth and selective SiGe etch process. Owing to these technologies, pseudo-silicon-on-insulator (SOI) structures, partially insula
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12eca22b29de9282105d583d5dc5fde1
https://doi.org/10.1109/led.2004.830064
https://doi.org/10.1109/led.2004.830064