Zobrazeno 1 - 10
of 24
pro vyhledávání: '"Kyoung Il Na"'
Autor:
Jinho Lee, Kyoung Il Na, Jin Gun Koo, Jong-Il Won, Sang Hoon Chai, Sang Gi Kim, Seong Wook Yoo, Hyung-Moo Park, Yil Suk Yang, Hoon Soo Park
Publikováno v:
ETRI Journal. 35:632-637
In this paper, we propose a superjunction trench gate MOSFET (SJ TGMOSFET) fabricated through a simple p-pillar forming process using deep trench and boron silicate glass doping process technology to reduce the process complexity. Throughout the vari
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1fa7348d1ee3bc49d510cd1b068f7b28
https://doi.org/10.4218/etrij.13.1912.0012
https://doi.org/10.4218/etrij.13.1912.0012
Publikováno v:
ETRI Journal. 35:425-430
In this paper, we propose a triple-gate trench power MOSFET (TGRMOS) that is made through a modified RESURF stepped oxide (RSO) process, that is, the nitride_RSO process. The electrical characteristics of TGRMOSs, such as the blocking voltage (BVDS)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::88c87c80fd58c276e62f11ed9c7870b5
https://doi.org/10.4218/etrij.13.0112.0246
https://doi.org/10.4218/etrij.13.0112.0246
Publikováno v:
ETRI Journal. 34:962-965
In this letter, we propose a new RESURF stepped oxide (RSO) process to make a semi-superjunction (semi-SJ) trench double-diffused MOSFET (TDMOS). In this new process, the thick single insulation layer (SiO2) of a conventional device is replaced by a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ffd9c63245a0fc8fb943983c7d11f223
https://doi.org/10.4218/etrij.12.0212.0127
https://doi.org/10.4218/etrij.12.0212.0127
Publikováno v:
Journal of the Korean Physical Society. 60:1508-1512
The vertical power metal-oxide semiconductor field-effect transistors (MOSFETs) with deep trench structures are the most promising candidates to overcome the trade-off relationship between the ON-resistance (RON) and the blocking voltage (BVDS). Espe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dae4154e1066b908fa560987cba4b972
https://doi.org/10.3938/jkps.60.1508
https://doi.org/10.3938/jkps.60.1508
Autor:
Yil Suk Yang, Kyoung Il Na, Jong Dae Kim, Jin Gun Koo, Dong Ha Kah, Hoon Soo Park, Jin Ho Lee, Sang Gi Kim
Publikováno v:
Journal of the Korean Physical Society. 60:1552-1556
Gate dielectrics in trench structures for trench gate metal oxide semiconductor field-effect transistor (MOSFET) power devices are very important to realize excellent characteristics. In this paper we describe multiple-layer gate dielectrics for tren
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aaaa1dfc3273761fde941ce4ac60218a
https://doi.org/10.3938/jkps.60.1552
https://doi.org/10.3938/jkps.60.1552
Autor:
Kyoung-Il Na, Jong-Ho Lee, Sorin Cristoloveanu, Maryline Bawedin, Ki-Heung Park, Jung-Hee Lee, Young-Ho Bae
Publikováno v:
Solid-State Electronics. 67:17-22
We demonstrate a new fully depleted (FD) double-gate (DG) MSDRAM cell, which features SONOS type storage node at the back-gate (control-gate). This single-transistor cell, based on the meta-stable dip (MSD) hysteresis effect, can also be operated in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::19b9cce4726f57fc5e34e3d1123f930c
https://doi.org/10.1016/j.sse.2011.07.013
https://doi.org/10.1016/j.sse.2011.07.013
Publikováno v:
Solid-State Electronics
We propose a double-gate (DG) 1T-DRAM cell combining SONOS type storage node on the back-gate (control-gate) for nonvolatile memory function. The cell sensing margin and retention time characteristics were systematically examined in terms of control-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ca645099e8e814559537786cd6ae545d
https://doi.org/10.1016/j.sse.2011.01.007
https://doi.org/10.1016/j.sse.2011.01.007
Autor:
Wade Xiong, Sorin Cristoloveanu, Jung-Hee Lee, Young Ho Bae, C. Rinn Cleavelin, P. Patruno, Kyoung Il Na
Publikováno v:
ECS Transactions. 19:297-302
The multiple gate MOSFETs transistors such as double-, triple-, and quadruple-gate MOSFETs on siliconon-insulator (SOI) substrate become the key devices for advanced CMOS technology because of their high performance and tolerance of short-channel eff
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ef347408f6814b3fccb72f3f5e7afcb4
https://doi.org/10.1149/1.3117421
https://doi.org/10.1149/1.3117421
Publikováno v:
International Journal of High Speed Electronics and Systems. 18:773-782
We have investigated the short-channel effect (SCE), floating-body effect, and three-dimensional coupling effect in triple-gate MOSFET with various fin widths, gate lengths and number of fins. It is found that the SCE of these devices is alleviated a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::69a718cc8f2bcf170be7d7cea14ba44e
https://doi.org/10.1142/s0129156408005758
https://doi.org/10.1142/s0129156408005758
Autor:
Cheol-Koo Hahn, Ki-Won Kim, Hyun-Chul Choi, Dae-Hyuk Kwon, Clemens Ostermaier, Sun-Young Hyun, S. I. Ahn, Hyun-Ick Cho, Kyoung-Il Na, Jong-Bong Ha, Hwa-Chul Lee, Jung-Hee Lee, Sung-Ho Hahm
Publikováno v:
Japanese Journal of Applied Physics. 47:2824-2827
We present the electrical characteristics of an AlGaN/GaN/p-GaN heterostructure field-effect transistor (HFET) with a Si delta-doped layer. The p-GaN layer greatly improves buffer isolation (between neighboring mesas) in the AlGaN/GaN HFET and leads
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6bd59aa462a6698109edb3b74fed06a8
https://doi.org/10.1143/jjap.47.2824
https://doi.org/10.1143/jjap.47.2824