Surface Characteristics and Biofilm Development on Selected Dental Ceramic Materials

Autor: Kyoung H. Kim, Carolina Loch, J. Neil Waddell, Geoffrey Tompkins, Donald Schwass

Publikováno v: International Journal of Dentistry, Vol 2017 (2017)

Background. Intraoral adjustment and polishing of dental ceramics often affect their surface characteristics, promoting increased roughness and consequent biofilm growth. This study correlated surface roughness to biofilm development with four commer

Externí odkaz: https://doaj.org/article/46c79c53081f4fe18dff95082f3e31bc

Effects of varying the degree of synchrony of energy and nitrogen release in the rumen on the synthesis of microbial protein in lactating dairy cows consuming a diet of grass silage and a cereal-based concentrate

Autor: Jai-Jun Choung, Kyoung H Kim, David G. Chamberlain

Publikováno v: Journal of the Science of Food and Agriculture. 79:1441-1447

The object of the experiment was to test the hypothesis that altering the degree of synchrony in the ruminal release of available energy and nitrogen would affect microbial protein synthesis (MPS) when the diet contained a high proportion of readily

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::69fa32babb9e227b99b2debcc8fb0b20
https://doi.org/10.1002/(sici)1097-0010(199908)79:11<1441::aid-jsfa385>3.0.co

Conversion of Distiller’s Grain into Fuel Alcohol and a Higher-Value Animal Feed by Dilute-Acid Pretreatment

Autor: Melvin P. Tucker, Nicholas J. Nagle, Edward W. Jennings, Kelly N. Ibsen, Andy Aden, Quang A. Nguyen, Kyoung H. Kim, Sally L. Noll

Publikováno v: Proceedings of the Twenty-Fifth Symposium on Biotechnology for Fuels and Chemicals Held May 4–7, 2003, in Breckenridge, CO ISBN: 9781468498738

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::bb4fa951e4e77ce1afd35639b8242b42
https://doi.org/10.1007/978-1-59259-837-3_92

Atomic layer deposition of insulating nitride interfacial layers for germanium metal oxide semiconductor field effect transistors with high-κ oxide/tungsten nitride gate stacks

Autor: Andrew P. Ritenour, Kyoung H. Kim, Roy G. Gordon, Dimitri A. Antoniadis

Publikováno v: Applied Physics Letters. 90:212104

Atomic layer deposition (ALD) was used to deposit passivating interfacial nitride layers between Ge and high-κ oxides. High-κ oxides on Ge surfaces passivated by ultrathin (1–2nm) ALD Hf3N4 or AlN layers exhibited well-behaved C-V characteristics

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9da664dabc604795f72657d9d76b193a
https://doi.org/10.1063/1.2741609

ALD of Scandium Oxide from Scandium Tris(N,N[sup ʹ]-diisopropylacetamidinate) and Water

Autor: Andrew P. Yousef, Kyoung H. Kim, Roy G. Gordon, Philippe de Rouffignac

Publikováno v: Electrochemical and Solid-State Letters. 9:F45

Sc 2 O 3 films were deposited by atomic layer deposition (ALD) from a new precursor scandium tris(N,N'-diisopropylacetamidinate) and water. The precursor is thermally stable (>350°C), volatile, with good reactivity to HF-last silicon. A growth rate

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0002cb3bd491dd95b8c1daba81afdceb
https://doi.org/10.1149/1.2191131