Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Kyongsik Yeom"'
Autor:
Dong-Hwee Hwang, Yong-Sik Kim, Minji Seo, Kyongsik Yeom, Young Ki Hong, Yong Seok Chung, MyeongHee Oh, Jongsung Woo, Young-cheon Jeong, Sungyoung Yoon, Sangjin Lee, Chang-Min Jeon, Dong-Hyun Kim, Jae-Hun Lee, S. L. Cho, D.H. Kim, Ga-Young Lee, Gun Rae Kim, HyunChang Lee, Yong-Kyu Lee, Hyun-Jin Shin
Publikováno v:
2021 IEEE International Memory Workshop (IMW).
Based on robustness of split-gate embedded Flash (eFlash) bit-cell, 28-nm eFlash process with Flash IP (20Mb) and SRAM IP (32Mb) is developed for automotive Grade 1 (G1) application with temperature range of (−40∼150°C) for the first time. In ca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::77520e6b5e0c91ff52b383f30b542789
https://doi.org/10.1109/imw51353.2021.9439602
https://doi.org/10.1109/imw51353.2021.9439602
Autor:
Kyongsik Yeom, Hyo-sang Lee, Ji-Sung Kim, Young-cheon Jeong, Gitae Jeong, Yong-Kyu Lee, Minji Seo, S. L. Cho, MyeongHee Oh, Eunmi Hong, HyunChang Lee, Seong-Ho Yoon, Hyuk-Jun Sung, Sangjin Lee, Joonsuk Kim, Jinchul Park, D.H. Kim, Cheol-min Kim, E. S. Jung, Hong-Kook Min, Jongsung Woo, Chang-Min Jeon, Jong-Shik Yoon, Ki-Chul Park
Publikováno v:
2019 Symposium on VLSI Technology.
Based on robust 28-nm embedded flash (eFlash) process, IoT One-chip for high-speed and low power applications which MCU-chip (10Mb eFlash) and connectivity-chip (BLE/Zigbee) are integrated for the first time. By introducing new devices on 28-nm low-p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df4bf7035e94dc151fda06691cac7370
https://doi.org/10.23919/vlsit.2019.8776557
https://doi.org/10.23919/vlsit.2019.8776557
Autor:
Sunghee Cho, Min-Su Kim, Jaejune Jang, Kyongsik Yeom, Duck-Hyung Lee, Yong-Seok Chung, Ji-Sung Kim, Kyung-Soo Min, Chang-Min Jeon, Dong-Hyun Kim, Hong-Kook Min, MyeongHee Oh, Jongsung Woo, Hyunug Kang, Bo-Young Seo, Hyo-sang Lee, Yong-Kyu Lee, K. Kim
Publikováno v:
2017 Symposium on VLSI Technology.
We developed a 4Mb split-gate e-flash on 28-nm low-power HKMG logic process, which demonstrates the smallest bit-cell size (0.03×-um2) for high performance IoT applications. High speed operation (25us write time and 2ms erase operation) and robust r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9311b8029e9be398f397fce08defa6a2
https://doi.org/10.23919/vlsit.2017.7998171
https://doi.org/10.23919/vlsit.2017.7998171
Publikováno v:
1996 Symposium on VLSI Technology. Digest of Technical Papers.
With W/TiN stack gate deposited at high temperature, excellent time-dependent dielectric breakdown (TDDB) characteristics of the gate oxide were obtained in MOS capacitors. In the case of negative gate bias where thin oxide reliability becomes critic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67ec7bf502380510c69d324cd84efd3a
https://doi.org/10.1109/vlsit.1996.507852
https://doi.org/10.1109/vlsit.1996.507852