Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Kyongnam Kim"'
Autor:
Junho Jung, Kyongnam Kim
Publikováno v:
Materials; Volume 16; Issue 10; Pages: 3611
To fabricate miniature semiconductors of 10 nm or less, various process technologies have reached their physical limits, and new process technologies for miniaturization are required. In the etching process, problems such as surface damage and profil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ede2027e1376d92d44de069875867983
Publikováno v:
Korean Journal of Metals and Materials. 58:397-402
PFC gas is primarily used during the etching process in the manufacture of ULSIs and in cleaning after CVD processes. PFC is classified as a greenhouse gas that stays in the atmosphere for a long time and has a high GWP. High capacity and high integr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e846f4972c73d4432ee9ae2447b6ca52
https://doi.org/10.3365/kjmm.2020.58.6.397
https://doi.org/10.3365/kjmm.2020.58.6.397
Autor:
Kyongnam Kim
Publikováno v:
Applied Science and Convergence Technology. 28:41-45
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ff18b44f99a88eef285424816fe022c
https://doi.org/10.5757/asct.2019.28.3.41
https://doi.org/10.5757/asct.2019.28.3.41
Publikováno v:
Applied Surface Science. 532:147358
Perfluorocarbon (PFC) gas is a representative greenhouse gas with high global warming potential (GWP) and is mainly used in the etching processes applicable to the manufacture of semiconductor devices. High capacity and high integration have been ach
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71b1617c6e9e9e213d2c14e11989f59c
https://doi.org/10.1016/j.apsusc.2020.147358
https://doi.org/10.1016/j.apsusc.2020.147358
Autor:
Kyung-Chae Yang, Kyongnam Kim, Soo-Gang Kim, Jeong Yub Lee, Ye-Ji Shin, Yeon-hee Kim, Geun Young Yeom, Dongwoo Kim
Publikováno v:
Nanotechnology. 31:265302
The etch characteristics of Si and TiO2 nanostructures for optical devices were investigated using pulse biased inductively coupled plasmas (ICP) with SF2/C4F8/Ar and BCl3/Ar, respectively, and the results were compared with those etched using contin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e90fe2c8993684ac555ebdcc7e1b64f
https://doi.org/10.1088/1361-6528/ab7c75
https://doi.org/10.1088/1361-6528/ab7c75
Autor:
Hwasung Kim, Jeongho Mun, Deokhyun Yun, Sang Ouk Kim, Kyongnam Kim, Geun Young Yeom, Jin Woo Park
Publikováno v:
Nanotechnology. 27(38)
Bottom-up block copolymer (BCP) lithography mediated by self-assembly of polystyrene (PS)/poly-methyl methacrylate (PMMA) is widely used as an alternative patterning method for various deep nanoscale devices, such as optical devices and transistors,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5ad8eeb3672c2fc4474af74f1a2e68dc
https://pubmed.ncbi.nlm.nih.gov/27528588
https://pubmed.ncbi.nlm.nih.gov/27528588
Autor:
TaiZhe, Lin, BaoTao, Kang, MinHwan, Jeon, Craig, Huffman, JeaHoo, Jeon, SungJoo, Lee, Wei, Han, JinYong, Lee, SeHan, Lee, GeunYoung, Yeom, KyongNam, Kim
Publikováno v:
ACS applied materialsinterfaces. 7(29)
Two-dimensional (2D) metal dichalcogenides like molybdenum disulfide (MoS2) may provide a pathway to high-mobility channel materials that are needed for beyond-complementary metal-oxide-semiconductor (CMOS) devices. Controlling the thickness of these
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::521a7098e166733c75ec089347af220b
https://pubmed.ncbi.nlm.nih.gov/26091282
https://pubmed.ncbi.nlm.nih.gov/26091282
Autor:
Deokhyun Yun, Jinwoo Park, Hwasung Kim, Jeongho Mun, Sangouk Kim, Kyongnam Kim, Geunyoung Yeom
Publikováno v:
Nanotechnology; 9/23/2016, Vol. 27 Issue 38, p1-1, 1p