Zobrazeno 1 - 10
of 38
pro vyhledávání: '"Kyongjun Kim"'
Autor:
Su Jeong Lee, Keon-Hee Lim, Jae Min Myoung, Kyongjun Kim, Jeeyoung Yoo, Youn Sang Kim, Jieun Ko, Eungkyu Lee
Publikováno v:
Journal of Materials Chemistry C. 3:4239-4243
Herein, we propose an ionic liquid–polymer dielectric layer for flexible electronics reinforced by a chemical interaction between the polymer matrix (PVP) and the ionic liquid. Due to the robust structures of the cross-linked PVP matrix and hydroge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf6c5ffca156b888c550903e47dea14c
https://doi.org/10.1039/c5tc00067j
https://doi.org/10.1039/c5tc00067j
Publikováno v:
Advanced Functional Materials. 24:4689-4697
Solution-processed oxide semiconductors (OSs) used as channel layer have been presented as a solution to the demand for flexible, cheap, and transparent thin-film transistors (TFTs). In order to produce high-performance and long-sustainable portable
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8a60f148212d4eb483b6baf62dcdbe8
https://doi.org/10.1002/adfm.201400588
https://doi.org/10.1002/adfm.201400588
Publikováno v:
J. Mater. Chem. C. 2:1050-1056
Solution-processed high-K dielectrics for oxide thin-film transistors (TFTs) have been widely studied with the objective of achieving high performance and low-cost TFTs for next-generation displays. In this study, we introduce an amorphous hafnium-la
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::378b79cd0557a42f01beb65cd3bac482
https://doi.org/10.1039/c3tc31727g
https://doi.org/10.1039/c3tc31727g
Autor:
ChaeHo Shin1, Kyongjun Kim2, JeongHoi Kim1, Wooseok Ko1, Yusin Yang1, SangKil Lee1, Chung Sam Jun1 ch76.shin@samsung.com, Youn Sang Kim2,3 younskim@snu.ac.kr
Publikováno v:
Scientific Reports. 6/28/2013, p1-6. 6p.
Publikováno v:
Advanced Materials. 25:2994-3000
Solution-processed and alkali metals, such as Li and Na, are introduced in doped amorphous zinc tin oxide (ZTO) semiconductor TFTs, which show better electrical performance, such as improved field effect mobility, than intrinsic amorphous ZTO semicon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::328136b48f425c0ae931e85fe00292b2
https://doi.org/10.1002/adma.201204236
https://doi.org/10.1002/adma.201204236
Autor:
Hong Koo Baik, Keon-Hee Lim, Moon Sung Kang, Si Yun Park, Jeong Ho Cho, J.M. Myoung, Tae Il Lee, Kyongjun Kim, Youn Sang Kim, Beom Joon Kim
Publikováno v:
Advanced Materials. 24:834-838
) and its dep-osition requires a high-cost vacuum process. More importantly, the poor transparency of silicon makes it unsuitable for trans-parent applications, and transparency is one of the key issues for future display technology. Consequently, in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::30afd92ee220cee66de9d46393936125
https://doi.org/10.1002/adma.201103173
https://doi.org/10.1002/adma.201103173
Autor:
Kyongjun Kim, Youn Sang Kim, Jong-Baek Seon, Si Yun Park, Keon-Hee Lim, Kyusoon Shin, Kookheon Char
Publikováno v:
Advanced Functional Materials. 21:3546-3553
As transparent displays become recog-nized as next-generation displays, the transparent thin-fi lm transistor (TTFT) is becoming an important device in the display industry. In addition, because the transparent device is causing a strong ripple effe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3896142cfbe0b8cf605b7f2ba25b99c6
https://doi.org/10.1002/adfm.201100323
https://doi.org/10.1002/adfm.201100323
Publikováno v:
Scopus-Elsevier
We report a compact design for a coarse approach mechanism, the so-called `walker', for a lowtemperature ultra-high-vacuum scanning probe microscope. We adapted the slip-stick principle with three actuators driven by the time sequential scheme sugges
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c95a8a357742ad07463e1dba9841308d
https://doi.org/10.3938/jkps.52.209
https://doi.org/10.3938/jkps.52.209
Autor:
Yu-Sin Yang, Jeong-hoi Kim, ChaeHo Shin, Sang-Kil Lee, Woo-Seok Ko, Kyongjun Kim, Chung Sam Jun, Youn Sang Kim
Publikováno v:
SCIENTIFIC REPORTS(3)
Scientific Reports
Scientific Reports
We fabricated a novel in-line conductive atomic force microscopy (C-AFM), which can analyze the resistive failures and examine process variance with an exact-positioning capability across the whole wafer scale in in-line DRAM fabrication process. Usi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e8204f0dca3a5bff4fc5c225e07e6756
http://open-repository.kisti.re.kr/cube/handle/open_repository/478972.do
http://open-repository.kisti.re.kr/cube/handle/open_repository/478972.do
Publikováno v:
ECS Meeting Abstracts. :1915-1915
We theoretically and experimentally investigate how the field-effect mobility (MFE) depends on the gate capacitances (CI) in solution-processed oxide semiconductor (OS) thin-film transistors (TFTs). With recently developed solution-based techniques,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::98cc26113f7a163a1d5d432e79dce3ea
https://doi.org/10.1149/ma2014-02/47/1915
https://doi.org/10.1149/ma2014-02/47/1915